JPH0338742B2 - - Google Patents
Info
- Publication number
- JPH0338742B2 JPH0338742B2 JP56212459A JP21245981A JPH0338742B2 JP H0338742 B2 JPH0338742 B2 JP H0338742B2 JP 56212459 A JP56212459 A JP 56212459A JP 21245981 A JP21245981 A JP 21245981A JP H0338742 B2 JPH0338742 B2 JP H0338742B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- film
- material film
- semiconductor layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 69
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 36
- 230000003647 oxidation Effects 0.000 description 27
- 238000007254 oxidation reaction Methods 0.000 description 27
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 241000293849 Cordylanthus Species 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21245981A JPS58112342A (ja) | 1981-12-25 | 1981-12-25 | 半導体装置の製造方法 |
| EP82107583A EP0073025B1 (de) | 1981-08-21 | 1982-08-19 | Verfahren zur Herstellung von dielektrischen Isolationszonen für Halbleiteranordnungen |
| DE8282107583T DE3279874D1 (en) | 1981-08-21 | 1982-08-19 | Method of manufacturing dielectric isolation regions for a semiconductor device |
| US06/410,083 US4532701A (en) | 1981-08-21 | 1982-08-19 | Method of manufacturing semiconductor device |
| US06/738,404 US4615104A (en) | 1981-08-21 | 1985-05-28 | Method of forming isolation regions containing conductive patterns therein |
| US06/737,922 US4615103A (en) | 1981-08-21 | 1985-05-28 | Method of forming isolation regions containing conductive patterns therein |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21245981A JPS58112342A (ja) | 1981-12-25 | 1981-12-25 | 半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27986389A Division JPH02177330A (ja) | 1989-10-30 | 1989-10-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58112342A JPS58112342A (ja) | 1983-07-04 |
| JPH0338742B2 true JPH0338742B2 (de) | 1991-06-11 |
Family
ID=16622975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21245981A Granted JPS58112342A (ja) | 1981-08-21 | 1981-12-25 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58112342A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4385975A (en) * | 1981-12-30 | 1983-05-31 | International Business Machines Corp. | Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate |
| JPH0660314U (ja) * | 1993-02-02 | 1994-08-23 | 友親 上甲 | 刈払機 |
| KR100515075B1 (ko) * | 1998-06-30 | 2006-01-12 | 주식회사 하이닉스반도체 | 반도체소자의 매립배선 형성방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS564245A (en) * | 1979-06-14 | 1981-01-17 | Ibm | Method of forming embedded oxide isolating region |
| JPS5615056B2 (de) * | 1973-02-08 | 1981-04-08 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615056U (de) * | 1979-07-12 | 1981-02-09 |
-
1981
- 1981-12-25 JP JP21245981A patent/JPS58112342A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615056B2 (de) * | 1973-02-08 | 1981-04-08 | ||
| JPS564245A (en) * | 1979-06-14 | 1981-01-17 | Ibm | Method of forming embedded oxide isolating region |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58112342A (ja) | 1983-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4459325A (en) | Semiconductor device and method for manufacturing the same | |
| KR100227766B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| US4532701A (en) | Method of manufacturing semiconductor device | |
| US4551911A (en) | Method for manufacturing semiconductor device | |
| EP0083816B1 (de) | Halbleiteranordnung mit einem Verbindungsmuster | |
| JPH0513566A (ja) | 半導体装置の製造方法 | |
| JPH02260660A (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| US5488002A (en) | Method for manufacturing self-aligned bipolar transistors using double diffusion | |
| GB2179201A (en) | Method for fabricating a semiconductor device | |
| JPS6355780B2 (de) | ||
| JPH0340938B2 (de) | ||
| JPS58220444A (ja) | 半導体装置の製造方法 | |
| JPH0338742B2 (de) | ||
| JPS60241261A (ja) | 半導体装置およびその製造方法 | |
| JPS6119111B2 (de) | ||
| JPH0223028B2 (de) | ||
| JPH0363220B2 (de) | ||
| JP2890550B2 (ja) | 半導体装置の製造方法 | |
| JPH0574220B2 (de) | ||
| JP2774407B2 (ja) | 半導体装置の製造方法 | |
| JPH0423828B2 (de) | ||
| JPS6129539B2 (de) | ||
| JPH02161750A (ja) | 半導体装置の製造方法 | |
| JPH0831468B2 (ja) | 半導体装置の製造方法 | |
| JPS60235460A (ja) | 半導体装置 |