JPS6310896B2 - - Google Patents
Info
- Publication number
- JPS6310896B2 JPS6310896B2 JP557380A JP557380A JPS6310896B2 JP S6310896 B2 JPS6310896 B2 JP S6310896B2 JP 557380 A JP557380 A JP 557380A JP 557380 A JP557380 A JP 557380A JP S6310896 B2 JPS6310896 B2 JP S6310896B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- silicon dioxide
- mask
- dioxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 94
- 235000012239 silicon dioxide Nutrition 0.000 claims description 47
- 239000000377 silicon dioxide Substances 0.000 claims description 47
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 238000005260 corrosion Methods 0.000 claims description 16
- 230000007797 corrosion Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 241000293849 Cordylanthus Species 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP557380A JPS56103443A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP557380A JPS56103443A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56103443A JPS56103443A (en) | 1981-08-18 |
| JPS6310896B2 true JPS6310896B2 (de) | 1988-03-10 |
Family
ID=11614956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP557380A Granted JPS56103443A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56103443A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873163A (ja) * | 1981-10-27 | 1983-05-02 | Toshiba Corp | Ｍｏｓ型半導体装置 |
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| US4980311A (en) * | 1987-05-05 | 1990-12-25 | Seiko Epson Corporation | Method of fabricating a semiconductor device |
| US4927780A (en) * | 1989-10-02 | 1990-05-22 | Motorola, Inc. | Encapsulation method for localized oxidation of silicon |
| US6306726B1 (en) * | 1999-08-30 | 2001-10-23 | Micron Technology, Inc. | Method of forming field oxide |
-
1980
- 1980-01-21 JP JP557380A patent/JPS56103443A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56103443A (en) | 1981-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0034910B1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und so hergestellte Vorrichtung | |
| JP3191693B2 (ja) | 半導体記憶装置の製造方法 | |
| US4419813A (en) | Method for fabricating semiconductor device | |
| JPH0355984B2 (de) | ||
| JPH1126597A (ja) | 半導体装置の製造方法 | |
| US4532696A (en) | Method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate | |
| JPS622465B2 (de) | ||
| US4151631A (en) | Method of manufacturing Si gate MOS integrated circuit | |
| JPH0638496B2 (ja) | 半導体装置 | |
| JPH05206451A (ja) | Ｍｏｓｆｅｔおよびその製造方法 | |
| GB2080024A (en) | Semiconductor Device and Method for Fabricating the Same | |
| JPH06163532A (ja) | 半導体素子分離方法 | |
| JPS6310896B2 (de) | ||
| EP0233791A2 (de) | Isolierter Gatter-Feldeffekttransistor und dessen Herstellungsverfahren | |
| JPH0116018B2 (de) | ||
| JPS60241261A (ja) | 半導体装置およびその製造方法 | |
| JPS6310897B2 (de) | ||
| JPS6333868A (ja) | Ｍｉｓ型電界効果トランジスタの製造方法 | |
| JPS603157A (ja) | 半導体装置の製造方法 | |
| JPH07115195A (ja) | Ｍｏｓトランジスタ及びその製造方法 | |
| JPS6092666A (ja) | Ｍｉｓトランジスタの製造方法 | |
| JP3848782B2 (ja) | 半導体装置の製造方法 | |
| JPS641942B2 (de) | ||
| JPS6129151B2 (de) | ||
| KR20020030338A (ko) | 반도체 장치 제조방법 |