JPS58161768A - スズの真空蒸着法 - Google Patents
スズの真空蒸着法Info
- Publication number
- JPS58161768A JPS58161768A JP4243382A JP4243382A JPS58161768A JP S58161768 A JPS58161768 A JP S58161768A JP 4243382 A JP4243382 A JP 4243382A JP 4243382 A JP4243382 A JP 4243382A JP S58161768 A JPS58161768 A JP S58161768A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- substrate
- sns2
- vacuum
- gaseous hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4243382A JPS58161768A (ja) | 1982-03-17 | 1982-03-17 | スズの真空蒸着法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4243382A JPS58161768A (ja) | 1982-03-17 | 1982-03-17 | スズの真空蒸着法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58161768A true JPS58161768A (ja) | 1983-09-26 |
| JPS617471B2 JPS617471B2 (OSRAM) | 1986-03-06 |
Family
ID=12635930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4243382A Granted JPS58161768A (ja) | 1982-03-17 | 1982-03-17 | スズの真空蒸着法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58161768A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109956495A (zh) * | 2017-12-25 | 2019-07-02 | 中国科学院物理研究所 | 直立交错式花瓣状二硫化锡纳米片及其制备方法 |
-
1982
- 1982-03-17 JP JP4243382A patent/JPS58161768A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109956495A (zh) * | 2017-12-25 | 2019-07-02 | 中国科学院物理研究所 | 直立交错式花瓣状二硫化锡纳米片及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS617471B2 (OSRAM) | 1986-03-06 |
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