JPS58158931A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58158931A
JPS58158931A JP57041058A JP4105882A JPS58158931A JP S58158931 A JPS58158931 A JP S58158931A JP 57041058 A JP57041058 A JP 57041058A JP 4105882 A JP4105882 A JP 4105882A JP S58158931 A JPS58158931 A JP S58158931A
Authority
JP
Japan
Prior art keywords
semiconductor device
film
impurity region
psg
thermal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57041058A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0414497B2 (enExample
Inventor
Yoichi Iga
伊賀　洋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57041058A priority Critical patent/JPS58158931A/ja
Publication of JPS58158931A publication Critical patent/JPS58158931A/ja
Publication of JPH0414497B2 publication Critical patent/JPH0414497B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—

Landscapes

  • Formation Of Insulating Films (AREA)
JP57041058A 1982-03-16 1982-03-16 半導体装置の製造方法 Granted JPS58158931A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57041058A JPS58158931A (ja) 1982-03-16 1982-03-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57041058A JPS58158931A (ja) 1982-03-16 1982-03-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58158931A true JPS58158931A (ja) 1983-09-21
JPH0414497B2 JPH0414497B2 (enExample) 1992-03-13

Family

ID=12597810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57041058A Granted JPS58158931A (ja) 1982-03-16 1982-03-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58158931A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5284800A (en) * 1992-02-19 1994-02-08 Integrated Device Technology, Inc. Method for preventing the exposure of borophosphosilicate glass to the ambient and stopping phosphorus ions from infiltrating silicon in a semiconductor process
US5759869A (en) * 1991-12-31 1998-06-02 Sgs-Thomson Microelectronics, Inc. Method to imporve metal step coverage by contact reflow

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108776A (en) * 1975-03-20 1976-09-27 Fujitsu Ltd Handotaisochino seizohoho
JPS53131770A (en) * 1977-04-21 1978-11-16 Fujitsu Ltd Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108776A (en) * 1975-03-20 1976-09-27 Fujitsu Ltd Handotaisochino seizohoho
JPS53131770A (en) * 1977-04-21 1978-11-16 Fujitsu Ltd Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759869A (en) * 1991-12-31 1998-06-02 Sgs-Thomson Microelectronics, Inc. Method to imporve metal step coverage by contact reflow
US5284800A (en) * 1992-02-19 1994-02-08 Integrated Device Technology, Inc. Method for preventing the exposure of borophosphosilicate glass to the ambient and stopping phosphorus ions from infiltrating silicon in a semiconductor process

Also Published As

Publication number Publication date
JPH0414497B2 (enExample) 1992-03-13

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