JPS58158931A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58158931A JPS58158931A JP57041058A JP4105882A JPS58158931A JP S58158931 A JPS58158931 A JP S58158931A JP 57041058 A JP57041058 A JP 57041058A JP 4105882 A JP4105882 A JP 4105882A JP S58158931 A JPS58158931 A JP S58158931A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- film
- impurity region
- psg
- thermal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000009499 grossing Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041058A JPS58158931A (ja) | 1982-03-16 | 1982-03-16 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041058A JPS58158931A (ja) | 1982-03-16 | 1982-03-16 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58158931A true JPS58158931A (ja) | 1983-09-21 |
| JPH0414497B2 JPH0414497B2 (enrdf_load_stackoverflow) | 1992-03-13 |
Family
ID=12597810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57041058A Granted JPS58158931A (ja) | 1982-03-16 | 1982-03-16 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58158931A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284800A (en) * | 1992-02-19 | 1994-02-08 | Integrated Device Technology, Inc. | Method for preventing the exposure of borophosphosilicate glass to the ambient and stopping phosphorus ions from infiltrating silicon in a semiconductor process |
| US5759869A (en) * | 1991-12-31 | 1998-06-02 | Sgs-Thomson Microelectronics, Inc. | Method to imporve metal step coverage by contact reflow |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51108776A (en) * | 1975-03-20 | 1976-09-27 | Fujitsu Ltd | Handotaisochino seizohoho |
| JPS53131770A (en) * | 1977-04-21 | 1978-11-16 | Fujitsu Ltd | Production of semiconductor device |
-
1982
- 1982-03-16 JP JP57041058A patent/JPS58158931A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51108776A (en) * | 1975-03-20 | 1976-09-27 | Fujitsu Ltd | Handotaisochino seizohoho |
| JPS53131770A (en) * | 1977-04-21 | 1978-11-16 | Fujitsu Ltd | Production of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759869A (en) * | 1991-12-31 | 1998-06-02 | Sgs-Thomson Microelectronics, Inc. | Method to imporve metal step coverage by contact reflow |
| US5284800A (en) * | 1992-02-19 | 1994-02-08 | Integrated Device Technology, Inc. | Method for preventing the exposure of borophosphosilicate glass to the ambient and stopping phosphorus ions from infiltrating silicon in a semiconductor process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0414497B2 (enrdf_load_stackoverflow) | 1992-03-13 |
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