JPS58157A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58157A
JPS58157A JP9855781A JP9855781A JPS58157A JP S58157 A JPS58157 A JP S58157A JP 9855781 A JP9855781 A JP 9855781A JP 9855781 A JP9855781 A JP 9855781A JP S58157 A JPS58157 A JP S58157A
Authority
JP
Japan
Prior art keywords
molybdenum
wiring
semiconductor device
cutting
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9855781A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328069B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hajime Kamioka
上岡　元
Seiichiro Kawamura
河村　誠一郎
Yoshihiko Higa
比嘉　良彦
Takashi Mitsuida
高 三井田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9855781A priority Critical patent/JPS58157A/ja
Publication of JPS58157A publication Critical patent/JPS58157A/ja
Publication of JPH0328069B2 publication Critical patent/JPH0328069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP9855781A 1981-06-25 1981-06-25 半導体装置 Granted JPS58157A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9855781A JPS58157A (ja) 1981-06-25 1981-06-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9855781A JPS58157A (ja) 1981-06-25 1981-06-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS58157A true JPS58157A (ja) 1983-01-05
JPH0328069B2 JPH0328069B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-17

Family

ID=14222986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9855781A Granted JPS58157A (ja) 1981-06-25 1981-06-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS58157A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160268A (ja) * 1986-12-05 1988-07-04 テキサス　インスツルメンツ　インコーポレイテツド 金属ヒューズリンクを用いた書込み可能なｍｏｓメモリ及びその製造方法
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
US4875971A (en) * 1987-04-05 1989-10-24 Elron Electronic Industries, Ltd. Fabrication of customized integrated circuits
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
JP2012178587A (ja) * 2005-08-31 2012-09-13 Internatl Business Mach Corp <Ibm> ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139958A (en) * 1981-02-23 1982-08-30 Seiko Instr & Electronics Ltd Fuse type non-volatile memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139958A (en) * 1981-02-23 1982-08-30 Seiko Instr & Electronics Ltd Fuse type non-volatile memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
JPS63160268A (ja) * 1986-12-05 1988-07-04 テキサス　インスツルメンツ　インコーポレイテツド 金属ヒューズリンクを用いた書込み可能なｍｏｓメモリ及びその製造方法
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
US4875971A (en) * 1987-04-05 1989-10-24 Elron Electronic Industries, Ltd. Fabrication of customized integrated circuits
JP2012178587A (ja) * 2005-08-31 2012-09-13 Internatl Business Mach Corp <Ibm> ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Also Published As

Publication number Publication date
JPH0328069B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-17

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