JPS58156594A - 硬質被膜の製造法 - Google Patents
硬質被膜の製造法Info
- Publication number
- JPS58156594A JPS58156594A JP57037042A JP3704282A JPS58156594A JP S58156594 A JPS58156594 A JP S58156594A JP 57037042 A JP57037042 A JP 57037042A JP 3704282 A JP3704282 A JP 3704282A JP S58156594 A JPS58156594 A JP S58156594A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- heated
- gas
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 title abstract description 5
- 239000011248 coating agent Substances 0.000 title abstract description 3
- 238000002360 preparation method Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 7
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 239000010432 diamond Substances 0.000 abstract description 12
- 229910003460 diamond Inorganic materials 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 101100327840 Arabidopsis thaliana CHLI1 gene Proteins 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57037042A JPS58156594A (ja) | 1982-03-08 | 1982-03-08 | 硬質被膜の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57037042A JPS58156594A (ja) | 1982-03-08 | 1982-03-08 | 硬質被膜の製造法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1523091A Division JPH0645898B2 (ja) | 1991-02-06 | 1991-02-06 | 硬質被膜の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58156594A true JPS58156594A (ja) | 1983-09-17 |
| JPH0366280B2 JPH0366280B2 (enrdf_load_stackoverflow) | 1991-10-16 |
Family
ID=12486539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57037042A Granted JPS58156594A (ja) | 1982-03-08 | 1982-03-08 | 硬質被膜の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58156594A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60118694A (ja) * | 1983-11-29 | 1985-06-26 | Mitsubishi Metal Corp | ダイヤモンドの低圧合成法 |
| JPS60122794A (ja) * | 1983-12-01 | 1985-07-01 | Mitsubishi Metal Corp | ダイヤモンドの低圧気相合成法 |
| JPS60124258A (ja) * | 1983-12-08 | 1985-07-03 | Mitsubishi Metal Corp | 表面被覆印字用ドツトピン |
| JPS62158195A (ja) * | 1985-12-27 | 1987-07-14 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
| JPS63128179A (ja) * | 1986-11-18 | 1988-05-31 | Sumitomo Electric Ind Ltd | 硬質窒化硼素の合成方法および合成装置 |
| JPS63182297A (ja) * | 1986-12-22 | 1988-07-27 | ゼネラル・エレクトリック・カンパニイ | Ｃｖｄ法によるダイヤモンド製造のための装置及び方法 |
| JPS63215595A (ja) * | 1987-03-02 | 1988-09-08 | Nachi Fujikoshi Corp | ダイヤモンドの気相合成方法及び装置 |
| CN103553036A (zh) * | 2013-09-29 | 2014-02-05 | 陈晖� | 一种合成金刚石的电路 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528547A (en) * | 1978-08-18 | 1980-02-29 | Matsushita Electric Ind Co Ltd | Magnetic recorder/reproducer |
-
1982
- 1982-03-08 JP JP57037042A patent/JPS58156594A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528547A (en) * | 1978-08-18 | 1980-02-29 | Matsushita Electric Ind Co Ltd | Magnetic recorder/reproducer |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60118694A (ja) * | 1983-11-29 | 1985-06-26 | Mitsubishi Metal Corp | ダイヤモンドの低圧合成法 |
| JPS60122794A (ja) * | 1983-12-01 | 1985-07-01 | Mitsubishi Metal Corp | ダイヤモンドの低圧気相合成法 |
| JPS60124258A (ja) * | 1983-12-08 | 1985-07-03 | Mitsubishi Metal Corp | 表面被覆印字用ドツトピン |
| JPS62158195A (ja) * | 1985-12-27 | 1987-07-14 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
| JPS63128179A (ja) * | 1986-11-18 | 1988-05-31 | Sumitomo Electric Ind Ltd | 硬質窒化硼素の合成方法および合成装置 |
| JPS63182297A (ja) * | 1986-12-22 | 1988-07-27 | ゼネラル・エレクトリック・カンパニイ | Ｃｖｄ法によるダイヤモンド製造のための装置及び方法 |
| JPS63215595A (ja) * | 1987-03-02 | 1988-09-08 | Nachi Fujikoshi Corp | ダイヤモンドの気相合成方法及び装置 |
| CN103553036A (zh) * | 2013-09-29 | 2014-02-05 | 陈晖� | 一种合成金刚石的电路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0366280B2 (enrdf_load_stackoverflow) | 1991-10-16 |
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