JPS58156594A - Preparation of hard coating film - Google Patents
Preparation of hard coating filmInfo
- Publication number
- JPS58156594A JPS58156594A JP57037042A JP3704282A JPS58156594A JP S58156594 A JPS58156594 A JP S58156594A JP 57037042 A JP57037042 A JP 57037042A JP 3704282 A JP3704282 A JP 3704282A JP S58156594 A JPS58156594 A JP S58156594A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- heated
- gas
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はダイヤモンドの気相合成特に被覆膜の合成に適
した製造法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a manufacturing method suitable for vapor phase synthesis of diamond, particularly for the synthesis of coatings.
ダイヤモンドは物質中膜も硬い物質であり、高熱伝導度
を有しながら絶縁体であるという独特の性質を持ってい
る為に各種の工業的応用が考えられている。しかしなが
ら周知の如くダイヤモンドは天然でも合成でも極めて高
価な物質であるのでその用途は限定されていた。しかし
近年気相からのダイヤモンド合成もしくは被覆技術が進
歩し工業的に実用可能とまで云われている。発明者等は
気相よりダイヤモンド被膜を歩留よく合成する方法につ
いて種々検討し、本発明に至った。Diamond is a hard material and has a unique property of being an insulator while having high thermal conductivity, so it is being considered for various industrial applications. However, as is well known, diamond is an extremely expensive substance, whether natural or synthetic, so its uses have been limited. However, in recent years, diamond synthesis or coating technology from the gas phase has progressed, and it is said to be industrially practical. The inventors have conducted various studies on methods for synthesizing diamond coatings in a high yield from the gas phase, and have arrived at the present invention.
従来より希薄な炭化水素雰囲気中でのダイヤモンドの成
長について知られているが、この反応は高温においても
生成速度があまりにも遅く工業的に採用されるに至って
いない。これを解決する為にタングステン等の金属線に
直接通電して高温にしてガスを通過する時に炭化水素に
分解を起すことが提案されている。Although diamond growth in a dilute hydrocarbon atmosphere has been known, the growth rate of this reaction is too slow even at high temperatures and has not been adopted industrially. In order to solve this problem, it has been proposed to directly apply electricity to a metal wire such as tungsten, raise the temperature, and cause it to decompose into hydrocarbons when gas passes through it.
本発明の特徴は、金属線によるガスの加熱と同時シープ
ラズマを発生させて反応を促進することにある。一般に
プラズマ中でイオンや電子が反応促進効果を果すとされ
ているが、本発明においては金属線による加熱とプラズ
マ発生を組合せることによってピ・イ・ヤモンド被膜を
効率よく生成させることができることを見出した。A feature of the present invention is that the reaction is promoted by heating the gas with a metal wire and simultaneously generating sea plasma. It is generally believed that ions and electrons have a reaction promoting effect in plasma, but in the present invention, it is possible to efficiently generate a P.I.Yamond film by combining heating with a metal wire and plasma generation. I found it.
第1図は本発明の方法に用いる装置の一例を示す概念図
であり、基板lOを電源12より通電発熱する加熱コイ
ル11を内蔵する台の上に載せ、これを密閉容器5の中
に設置し、流量8.4にょつて調製されたHs 及び
炭化水素を流す。この混合ガスは電源8に接続するコイ
ル7によってプラズマを発生し、基板に至る途中に設け
られた電源9によって赤熱するタングステン等の一ビ、
−タsがあり、これを通過して基板lO上に被覆層(ダ
イヤモンド)を形成せしめるものである。FIG. 1 is a conceptual diagram showing an example of the apparatus used in the method of the present invention, in which a substrate 10 is placed on a stand containing a heating coil 11 that is energized by a power source 12 and generates heat, and this is placed in a closed container 5. Then, flow the Hs and hydrocarbons prepared at a flow rate of 8.4. This mixed gas generates plasma by a coil 7 connected to a power source 8, and is heated by a power source 9 installed on the way to the substrate, such as tungsten or the like.
There is a -ta s through which a coating layer (diamond) is formed on the substrate IO.
上記プラズマは、高周波、直流、マ、イクロ波のいずれ
でも発生するが、本発明においてはそのいずれでも効果
は同じである。The above-mentioned plasma can be generated by any of high frequency, direct current, microwave, and microwave waves, but in the present invention, the effect is the same with any of them.
次に実施例によって説明する。Next, an example will be explained.
実施例
第1図においてHs l及びCH42から流量計によっ
てH1+100 CC/min e CH42CC/m
in に調整して混合ガスを導入した。石英の反応管
5の外周から人力200Wで13.56 MHzの高周
波によってプラズマを発生せしめ、Wヒータ8によって
約2000℃に加熱した。Si 単結晶基板lOはヒ
ーターにより800℃に保ち、バルブ6と18の間を真
空ポンプ14により5 Torr として1時間の処
理を行った。Example In Fig. 1, H1+100 CC/min e CH42CC/m is calculated from Hs l and CH42 by a flowmeter.
The mixed gas was introduced after adjusting the temperature to in. Plasma was generated from the outer periphery of the quartz reaction tube 5 by a high frequency of 13.56 MHz using 200 W of manual power, and heated to about 2000° C. by a W heater 8 . The Si single crystal substrate IO was kept at 800° C. with a heater, and the vacuum pump 14 was used to set the pressure between the valves 6 and 18 at 5 Torr for one hour.
これによって基板上に緻密なダイヤモンド被膜が第1図
において、上記と全く同じ条件でたN 、RFコイルに
高周波電源を投入しないでプラズマ発生なしで処理した
場合は0,5μのダイヤモンドが生成したに過ぎず、本
発明の方法では8倍の生成速度であった。As a result, a dense diamond film was formed on the substrate as shown in Fig. 1. If the process was performed under the same conditions as above, without applying a high frequency power to the RF coil and without generating plasma, diamonds of 0.5μ would have been formed. However, the production rate was 8 times faster in the method of the present invention.
以上説明した如く、本発明の方法でダイヤモンドが効率
よく生成するため、ヒートシンク材各種工具等工業的に
広い範囲に応用することができる。As explained above, since diamond is efficiently generated by the method of the present invention, it can be applied to a wide range of industrial applications such as heat sink materials and various tools.
第1図は本発明の方法に用いる装置の1例を示す概念図
である。
1:水素ボンベ、2:炭化水素ボンベ、8.4:流量計
、5:反応容器、6.18:パルプ、7:コイル、8:
プラズマ電源、9.12:Ac電源、8、ll:ヒータ
ー、10:基板、14:真空ポンプ。FIG. 1 is a conceptual diagram showing an example of an apparatus used in the method of the present invention. 1: Hydrogen cylinder, 2: Hydrocarbon cylinder, 8.4: Flowmeter, 5: Reaction vessel, 6.18: Pulp, 7: Coil, 8:
Plasma power supply, 9.12: Ac power supply, 8, 11: Heater, 10: Substrate, 14: Vacuum pump.
Claims (1)
水素及び水素の混合ガス気流を通し赤熱した金属線を設
けると共に上記ガスでブラ゛ズマをA substrate is placed in a heated state in a sealed container, a red-hot metal wire is provided through a mixed gas flow of hydrocarbon and hydrogen in the container, and a plasma is generated with the gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57037042A JPS58156594A (en) | 1982-03-08 | 1982-03-08 | Preparation of hard coating film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57037042A JPS58156594A (en) | 1982-03-08 | 1982-03-08 | Preparation of hard coating film |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1523091A Division JPH0645898B2 (en) | 1991-02-06 | 1991-02-06 | Hard coating manufacturing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58156594A true JPS58156594A (en) | 1983-09-17 |
JPH0366280B2 JPH0366280B2 (en) | 1991-10-16 |
Family
ID=12486539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57037042A Granted JPS58156594A (en) | 1982-03-08 | 1982-03-08 | Preparation of hard coating film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58156594A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60118694A (en) * | 1983-11-29 | 1985-06-26 | Mitsubishi Metal Corp | Method for synthesizing diamond under low pressure |
JPS60122794A (en) * | 1983-12-01 | 1985-07-01 | Mitsubishi Metal Corp | Low pressure vapor phase synthesis method of diamond |
JPS60124258A (en) * | 1983-12-08 | 1985-07-03 | Mitsubishi Metal Corp | Surface-covered printing dot pin |
JPS62158195A (en) * | 1985-12-27 | 1987-07-14 | Natl Inst For Res In Inorg Mater | Synthesizing method of diamond |
JPS63128179A (en) * | 1986-11-18 | 1988-05-31 | Sumitomo Electric Ind Ltd | Method and apparatus for synthesizing hard boron nitride |
JPS63182297A (en) * | 1986-12-22 | 1988-07-27 | ゼネラル・エレクトリック・カンパニイ | Aggregate diamond |
JPS63215595A (en) * | 1987-03-02 | 1988-09-08 | Nachi Fujikoshi Corp | Method and apparatus for vapor phase synthesis of diamond |
CN103553036A (en) * | 2013-09-29 | 2014-02-05 | 陈晖� | Circuit for synthesis of diamond |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5528547A (en) * | 1978-08-18 | 1980-02-29 | Matsushita Electric Ind Co Ltd | Magnetic recorder/reproducer |
-
1982
- 1982-03-08 JP JP57037042A patent/JPS58156594A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5528547A (en) * | 1978-08-18 | 1980-02-29 | Matsushita Electric Ind Co Ltd | Magnetic recorder/reproducer |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60118694A (en) * | 1983-11-29 | 1985-06-26 | Mitsubishi Metal Corp | Method for synthesizing diamond under low pressure |
JPS60122794A (en) * | 1983-12-01 | 1985-07-01 | Mitsubishi Metal Corp | Low pressure vapor phase synthesis method of diamond |
JPS60124258A (en) * | 1983-12-08 | 1985-07-03 | Mitsubishi Metal Corp | Surface-covered printing dot pin |
JPH0459148B2 (en) * | 1983-12-08 | 1992-09-21 | Mitsubishi Materials Corp | |
JPS62158195A (en) * | 1985-12-27 | 1987-07-14 | Natl Inst For Res In Inorg Mater | Synthesizing method of diamond |
JPH0372038B2 (en) * | 1985-12-27 | 1991-11-15 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | |
JPS63128179A (en) * | 1986-11-18 | 1988-05-31 | Sumitomo Electric Ind Ltd | Method and apparatus for synthesizing hard boron nitride |
JPS63182297A (en) * | 1986-12-22 | 1988-07-27 | ゼネラル・エレクトリック・カンパニイ | Aggregate diamond |
JPH0472798B2 (en) * | 1986-12-22 | 1992-11-19 | Gen Electric | |
JPS63215595A (en) * | 1987-03-02 | 1988-09-08 | Nachi Fujikoshi Corp | Method and apparatus for vapor phase synthesis of diamond |
CN103553036A (en) * | 2013-09-29 | 2014-02-05 | 陈晖� | Circuit for synthesis of diamond |
Also Published As
Publication number | Publication date |
---|---|
JPH0366280B2 (en) | 1991-10-16 |
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