CN103553036A - Circuit for synthesis of diamond - Google Patents
Circuit for synthesis of diamond Download PDFInfo
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- CN103553036A CN103553036A CN201310469988.1A CN201310469988A CN103553036A CN 103553036 A CN103553036 A CN 103553036A CN 201310469988 A CN201310469988 A CN 201310469988A CN 103553036 A CN103553036 A CN 103553036A
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- circuit
- copper cash
- silicon stack
- diamond
- voltage power
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Abstract
The invention especially relates to a circuit for synthesis of diamond, belonging to the technical field of circuits for artificial diamond. The circuit comprises a plasma reactor which is composed of a hollow quartz tube, a copper wire, a hollow iron pipe and a temperature control pedestal. A high direct high voltage power supply is connected with an external three-phase alternate current input source, and two ends of the high direct high voltage power supply are respectively connected with two ends of a filter; one output end of the filter is connected with one end of a resistor, one end of a thyristor, one end of a pulse formation network, one end of a pulse transformer and the copper wire and is then grounded; one end of an inductor is in series connection with the positive electrode of a silicon stack No. 1, and the other end of the inductor is connected with the filter; the negative electrode of the silicon stack No. 1 is connected with the negative electrode of a silicon stack No. 2, the other end of the thyristor spring, the other end of the pulse formation network, the other end of the pulse transformer and the top of the iron pipe; and the positive electrode of the silicon stack No. 2 is connected with the other end of the resistor. The circuit forms a plasma environment in a reactor; after addition of a monomer and a carrier in the reactor, a diamond crystal can be formed at normal pressure; and the circuit is simple and needs low production cost.
Description
Technical field
The invention belongs to man-made diamond circuit engineering field, especially relate to a kind of circuit of diamond synthesis.
Background technology
The diamond of occurring in nature is the xln of carbon under high-temperature and high-pressure conditions, is the mineral that nature is the hardest.Due to adamantine this characteristic, be widely used in industry, but natural diamond price is more expensive, be applied to can cause high cost in industry.In recent years, there is the artificial adamantine research of involutory one-tenth more, in prior art, the environment of diamond synthesis is comparatively harsh, that graphite is put under high temperature and high pressure environment and is transformed into diamond, production cost that the High Temperature High Pressure of long period makes is expensive, and equipment requirements is harsh, and traditional artificially synthesizing diamond method rarely has just can react under atmospheric environment and obtains.
Summary of the invention
The object of the invention is to solve the deficiencies in the prior art part, and provide a kind of circuit simple, easily realize, the circuit of diamond synthesis under atmospheric environment.
The object of the invention is to solve by following technical proposal:
A kind of circuit of diamond synthesis, comprise that outside three-phase alternating current input source, DC high-voltage power supply, wave filter, inductance, a silicon stack, No. two silicon stacks, resistance, locks flow spring, pulse forming network and pulse transformer, it is characterized in that: also include plasma reactor, described plasma reactor comprises hollow quartz tube, silica tube outer felt is wound with copper cash, and silica tube inside is provided with hollow iron pipe;
Described DC high-voltage power supply is connected with outside three-phase alternating current input source, and the two ends of DC high-voltage power supply are connected with the two ends of wave filter respectively; Ground connection after one output terminal of wave filter is connected with resistance one end, lock stream spring one end, pulse forming network one end, pulse transformer one end, copper cash; Connect with the positive pole of a silicon stack in one end of inductance, the inductance the other end is connected with wave filter; The negative pole of a silicon stack is connected with the negative pole of No. two silicon stacks, the other end, the pulse forming network the other end, the pulse transformer the other end, the iron pipe top of lock stream spring; The positive pole of No. two silicon stacks is connected with the other end of resistance.
Silica tube top side wall of the present invention is provided with admission port; Silica tube bottom is provided with temperature control pedestal.
Copper cash of the present invention is hollow copper cash, and copper cash one end is connected with water coolant and enters pipe, and the copper cash the other end is connected with coolant outlet hose.
Compared to the prior art the present invention has following characteristics and beneficial effect:
1, this circuit forms plasma ambient in reactor by high-voltage pulse, can depress at normal atmospheric, adds monomer and carrier in plasma reactor, crystallization on the diamond small-particle surface of placing on temperature control pedestal.
2, this circuit structure is simple, is applicable to common equipment, and production cost is lower.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further details.
As shown in Figure 1, a kind of circuit of diamond synthesis, comprises outside three-phase alternating current input source 1, DC high-voltage power supply 2, wave filter 3, inductance 4, silicon stack 5, No. two silicon stacks 6, resistance 7, lock stream spring 8, pulse forming network 9 and pulse transformer 10.The present invention also includes plasma reactor 11, and described plasma reactor 11 comprises hollow quartz tube 12, and silica tube 12 outer felt are wound with copper cash 13, and silica tube 12 inside are provided with hollow iron pipe 14;
Described DC high-voltage power supply 2 is connected with outside three-phase alternating current input source 1, and the two ends of DC high-voltage power supply 2 are connected with the two ends of wave filter 3 respectively; Ground connection 17 after one output terminal of wave filter 3 is connected with resistance 7 one end, lock stream spring 8 one end, pulse forming network 9 one end, pulse transformer 10 one end, copper cash 13; Connect with the positive pole of a silicon stack 5 in one end of inductance 4, inductance 4 the other ends are connected with wave filter 3; The negative pole of a silicon stack 5 is connected with the negative pole of No. two silicon stacks 6, the other end, pulse forming network 9 the other ends, pulse transformer 10 the other ends, iron pipe 14 tops of lock stream spring 8; The positive pole of No. two silicon stacks 6 is connected with the other end of resistance 7.
Silica tube 12 top side wall of the present invention are provided with admission port 15; Silica tube 12 bottoms are provided with temperature control pedestal 16.
Application to each components and parts during the present invention connects by circuit, in the interior formation plasma ambient of plasma reactor 11.In iron pipe 14, add monomer, from admission port 15, add carrier, on temperature control pedestal 16, put diamond small-particle, carrier and monomer are in isoionic good environment, can be under atmospheric state, temperature control pedestal 16 provides certain temperature, on diamond small-particle surface, forms new diamond crystalline.
This circuit connecting mode is simple, and the device structure of application is comparatively simple, and the environmental requirement of reaction is lower, has directly reduced production cost, has improved productivity effect.
Claims (3)
1. the circuit of a diamond synthesis, comprise that outside three-phase alternating current input source, DC high-voltage power supply, wave filter, inductance, a silicon stack, No. two silicon stacks, resistance, locks flow spring, pulse forming network and pulse transformer, it is characterized in that: also include plasma reactor, described plasma reactor comprises hollow quartz tube, silica tube outer felt is wound with copper cash, and silica tube inside is provided with hollow iron pipe;
Described DC high-voltage power supply is connected with outside three-phase alternating current input source, and the two ends of DC high-voltage power supply are connected with the two ends of wave filter respectively; Ground connection after one output terminal of wave filter is connected with resistance one end, lock stream spring one end, pulse forming network one end, pulse transformer one end, copper cash; Connect with the positive pole of a silicon stack in one end of inductance, the inductance the other end is connected with wave filter; The negative pole of a silicon stack is connected with the negative pole of No. two silicon stacks, the other end, the pulse forming network the other end, the pulse transformer the other end, the iron pipe top of lock stream spring; The positive pole of No. two silicon stacks is connected with the other end of resistance.
2. the circuit of diamond synthesis according to claim 1, is characterized in that: described silica tube top side wall is provided with admission port; Silica tube bottom is provided with temperature control pedestal.
3. the circuit of diamond synthesis according to claim 1, is characterized in that: described copper cash is hollow copper cash, and copper cash one end is connected with water coolant and enters pipe, and the copper cash the other end is connected with coolant outlet hose.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310469988.1A CN103553036A (en) | 2013-09-29 | 2013-09-29 | Circuit for synthesis of diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310469988.1A CN103553036A (en) | 2013-09-29 | 2013-09-29 | Circuit for synthesis of diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103553036A true CN103553036A (en) | 2014-02-05 |
Family
ID=50007461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310469988.1A Pending CN103553036A (en) | 2013-09-29 | 2013-09-29 | Circuit for synthesis of diamond |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103553036A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58156594A (en) * | 1982-03-08 | 1983-09-17 | Sumitomo Electric Ind Ltd | Preparation of hard coating film |
| CN88101737A (en) * | 1987-04-03 | 1988-10-26 | 富士通株式会社 | Method and apparatus for vapor deposition of diamond |
| CA2153184A1 (en) * | 1994-07-05 | 1996-01-06 | John Meroth | Method of making synthetic diamond film with reduced bowing |
| CN1680004A (en) * | 2005-01-06 | 2005-10-12 | 中国工程物理研究院环保工程研究中心 | Pulse corona discharge flue gas desulfurization, denitrification and dust removal integrated device |
| CN203486911U (en) * | 2013-09-29 | 2014-03-19 | 陈晖� | Circuit for synthesizing diamonds |
-
2013
- 2013-09-29 CN CN201310469988.1A patent/CN103553036A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58156594A (en) * | 1982-03-08 | 1983-09-17 | Sumitomo Electric Ind Ltd | Preparation of hard coating film |
| CN88101737A (en) * | 1987-04-03 | 1988-10-26 | 富士通株式会社 | Method and apparatus for vapor deposition of diamond |
| CA2153184A1 (en) * | 1994-07-05 | 1996-01-06 | John Meroth | Method of making synthetic diamond film with reduced bowing |
| CN1680004A (en) * | 2005-01-06 | 2005-10-12 | 中国工程物理研究院环保工程研究中心 | Pulse corona discharge flue gas desulfurization, denitrification and dust removal integrated device |
| CN203486911U (en) * | 2013-09-29 | 2014-03-19 | 陈晖� | Circuit for synthesizing diamonds |
Non-Patent Citations (2)
| Title |
|---|
| 施耀等: "脉冲等离子体反应器放电特性研究", 《电工电能新技术》, vol. 25, no. 1, 31 January 2006 (2006-01-31) * |
| 汤文杰等: "大气等离子体制备类金刚石薄膜", 《包装工程》, vol. 27, no. 5, 31 October 2006 (2006-10-31) * |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140205 |