CN203486911U - Circuit for synthesizing diamonds - Google Patents
Circuit for synthesizing diamonds Download PDFInfo
- Publication number
- CN203486911U CN203486911U CN201320623733.1U CN201320623733U CN203486911U CN 203486911 U CN203486911 U CN 203486911U CN 201320623733 U CN201320623733 U CN 201320623733U CN 203486911 U CN203486911 U CN 203486911U
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- CN
- China
- Prior art keywords
- circuit
- copper cash
- silicon stack
- voltage power
- power supply
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- Expired - Fee Related
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- Carbon And Carbon Compounds (AREA)
Abstract
The utility model belongs to the technical field of synthetic diamond circuits, and in particular relates to a circuit for synthesizing diamonds. The circuit comprises a plasma reactor, a hollow quartz tube, a copper wire, a hollow iron tube and a temperature control base, wherein a direct current high voltage power supply is connected with an external three-phase alternating current input source, two ends of the direct current high voltage power supply are connected with two ends of a filter; an output end of the filter is grounded after being connected with one end of a resistor, one end of a thyratron spring, one end of a pulse shaping network, one end of a pulse transformer and the copper wire; one end of an inductor is in series connection with a positive electrode of a No.1 silicon stack, and the other end of the inductor is connected with the filter; a negative electrode of the No.1 silicon stack is connected with a negative electrode of a No.2 silicon stack, the other end of the thyratron spring, the other end of the pulse shaping network, the other end of the pulse transformer and the top of the iron tube; a positive electrode of the No.2 silicon stack is connected with the other end of the resistor. A plasma environment is formed in the reactor so as to form diamond crystals under normal atmosphere pressure after a monomer and a carrier are added; the circuit is simple, and the production cost is low.
Description
Technical field
The utility model belongs to man-made diamond circuit engineering field, especially relates to a kind of circuit of diamond synthesis.
Background technology
The diamond of occurring in nature is the xln of carbon under high-temperature and high-pressure conditions, is the mineral that nature is the hardest.Due to adamantine this characteristic, be widely used in industry, but natural diamond price is more expensive, be applied to can cause high cost in industry.In recent years, there is the artificial adamantine research of involutory one-tenth more, in prior art, the environment of diamond synthesis is comparatively harsh, that graphite is put under high temperature and high pressure environment and is transformed into diamond, production cost that the High Temperature High Pressure of long period makes is expensive, and equipment requirements is harsh, and traditional artificially synthesizing diamond method rarely has just can react under atmospheric environment and obtains.
Utility model content
The purpose of this utility model is to solve the deficiencies in the prior art part, and provide a kind of circuit simple, easily realize, the circuit of diamond synthesis under atmospheric environment.
The purpose of this utility model solves by following technical proposal:
A kind of circuit of diamond synthesis, comprise that outside three-phase alternating current input source, DC high-voltage power supply, wave filter, inductance, a silicon stack, No. two silicon stacks, resistance, locks flow spring, pulse forming network and pulse transformer, it is characterized in that: also include plasma reactor, described plasma reactor comprises hollow quartz tube, silica tube outer felt is wound with copper cash, and silica tube inside is provided with hollow iron pipe;
Described DC high-voltage power supply is connected with outside three-phase alternating current input source, and the two ends of DC high-voltage power supply are connected with the two ends of wave filter respectively; Ground connection after one output terminal of wave filter is connected with resistance one end, lock stream spring one end, pulse forming network one end, pulse transformer one end, copper cash; Connect with the positive pole of a silicon stack in one end of inductance, the inductance the other end is connected with wave filter; The negative pole of a silicon stack is connected with the negative pole of No. two silicon stacks, the other end, the pulse forming network the other end, the pulse transformer the other end, the iron pipe top of lock stream spring; The positive pole of No. two silicon stacks is connected with the other end of resistance.
Silica tube top side wall described in the utility model is provided with admission port; Silica tube bottom is provided with temperature control pedestal.
Copper cash described in the utility model is hollow copper cash, and copper cash one end is connected with water coolant and enters pipe, and the copper cash the other end is connected with coolant outlet hose.
Compared to the prior art the utlity model has following characteristics and beneficial effect:
1, this circuit forms plasma ambient in reactor by high-voltage pulse, can depress at normal atmospheric, adds monomer and carrier in plasma reactor, crystallization on the diamond small-particle surface of placing on temperature control pedestal.
2, this circuit structure is simple, is applicable to common equipment, and production cost is lower.
Accompanying drawing explanation
Fig. 1 is the utility model structural representation.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further details.
As shown in Figure 1, a kind of circuit of diamond synthesis, comprises outside three-phase alternating current input source 1, DC high-voltage power supply 2, wave filter 3, inductance 4, silicon stack 5, No. two silicon stacks 6, resistance 7, lock stream spring 8, pulse forming network 9 and pulse transformer 10.The utility model also includes plasma reactor 11, and described plasma reactor 11 comprises hollow quartz tube 12, and silica tube 12 outer felt are wound with copper cash 13, and silica tube 12 inside are provided with hollow iron pipe 14;
Described DC high-voltage power supply 2 is connected with outside three-phase alternating current input source 1, and the two ends of DC high-voltage power supply 2 are connected with the two ends of wave filter 3 respectively; Ground connection 17 after one output terminal of wave filter 3 is connected with resistance 7 one end, lock stream spring 8 one end, pulse forming network 9 one end, pulse transformer 10 one end, copper cash 13; Connect with the positive pole of a silicon stack 5 in one end of inductance 4, inductance 4 the other ends are connected with wave filter 3; The negative pole of a silicon stack 5 is connected with the negative pole of No. two silicon stacks 6, the other end, pulse forming network 9 the other ends, pulse transformer 10 the other ends, iron pipe 14 tops of lock stream spring 8; The positive pole of No. two silicon stacks 6 is connected with the other end of resistance 7.
Silica tube 12 top side wall described in the utility model are provided with admission port 15; Silica tube 12 bottoms are provided with temperature control pedestal 16.
Copper cash 13 described in the utility model is hollow copper cash 13, and copper cash 13 one end are connected with water coolant and enter pipe, and the copper cash the other end is connected with coolant outlet hose.
Application to each components and parts during the utility model connects by circuit, in the interior formation plasma ambient of plasma reactor 11.In iron pipe 14, add monomer, from admission port 15, add carrier, on temperature control pedestal 16, put diamond small-particle, carrier and monomer are in isoionic good environment, can be under atmospheric state, temperature control pedestal 16 provides certain temperature, on diamond small-particle surface, forms new diamond crystalline.
This circuit connecting mode is simple, and the device structure of application is comparatively simple, and the environmental requirement of reaction is lower, has directly reduced production cost, has improved productivity effect.
Claims (3)
1. the circuit of a diamond synthesis, comprise that outside three-phase alternating current input source, DC high-voltage power supply, wave filter, inductance, a silicon stack, No. two silicon stacks, resistance, locks flow spring, pulse forming network and pulse transformer, it is characterized in that: also include plasma reactor, described plasma reactor comprises hollow quartz tube, silica tube outer felt is wound with copper cash, and silica tube inside is provided with hollow iron pipe;
Described DC high-voltage power supply is connected with outside three-phase alternating current input source, and the two ends of DC high-voltage power supply are connected with the two ends of wave filter respectively; Ground connection after one output terminal of wave filter is connected with resistance one end, lock stream spring one end, pulse forming network one end, pulse transformer one end, copper cash; Connect with the positive pole of a silicon stack in one end of inductance, the inductance the other end is connected with wave filter; The negative pole of a silicon stack is connected with the negative pole of No. two silicon stacks, the other end, the pulse forming network the other end, the pulse transformer the other end, the iron pipe top of lock stream spring; The positive pole of No. two silicon stacks is connected with the other end of resistance.
2. the circuit of diamond synthesis according to claim 1, is characterized in that: described silica tube top side wall is provided with admission port; Silica tube bottom is provided with temperature control pedestal.
3. the circuit of diamond synthesis according to claim 1, is characterized in that: described copper cash is hollow copper cash, and copper cash one end is connected with water coolant and enters pipe, and the copper cash the other end is connected with coolant outlet hose.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320623733.1U CN203486911U (en) | 2013-09-29 | 2013-09-29 | Circuit for synthesizing diamonds |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320623733.1U CN203486911U (en) | 2013-09-29 | 2013-09-29 | Circuit for synthesizing diamonds |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203486911U true CN203486911U (en) | 2014-03-19 |
Family
ID=50257756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320623733.1U Expired - Fee Related CN203486911U (en) | 2013-09-29 | 2013-09-29 | Circuit for synthesizing diamonds |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203486911U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103553036A (en) * | 2013-09-29 | 2014-02-05 | 陈晖� | Circuit for synthesis of diamond |
| RU2619779C1 (en) * | 2015-12-17 | 2017-05-18 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет" | Cold cathode thyratron control device |
-
2013
- 2013-09-29 CN CN201320623733.1U patent/CN203486911U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103553036A (en) * | 2013-09-29 | 2014-02-05 | 陈晖� | Circuit for synthesis of diamond |
| RU2619779C1 (en) * | 2015-12-17 | 2017-05-18 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет" | Cold cathode thyratron control device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140319 Termination date: 20160929 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |