CN103508452B - A kind of Diamond crystallizer - Google Patents
A kind of Diamond crystallizer Download PDFInfo
- Publication number
- CN103508452B CN103508452B CN201310469974.XA CN201310469974A CN103508452B CN 103508452 B CN103508452 B CN 103508452B CN 201310469974 A CN201310469974 A CN 201310469974A CN 103508452 B CN103508452 B CN 103508452B
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- China
- Prior art keywords
- silica tube
- voltage pulse
- monomer
- pulse circuit
- circuit plate
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Abstract
The invention belongs to artificial diamond's preparing technical field, especially relate to a kind of Diamond crystallizer, comprise housing.Enclosure interior is provided with power supply and high-voltage pulse circuit plate, and described high-voltage pulse circuit plate is connected with power supply, is provided with crystallization mechanism above housing, and crystallization mechanism is connected with high-voltage pulse circuit plate and power supply.Described crystallization mechanism comprises plasma reactor and is located at the temperature controlled base below plasma reactor.Described plasma reactor comprises cylindrical, hollow silica tube, and silica tube upper portion side wall is provided with the quartz carrier be communicated with silica tube and enters pipe, and silica tube inside is provided with monomer and enters pipe, and monomer is entered pipe and is connected with high-voltage pulse circuit plate by wire; Described silica tube bottom outer wall is wound with hollow copper tubing, and hollow copper tubing is connected with high-voltage pulse circuit plate by wire.The present invention under atmospheric environment, can form high purity diamond crystalline on diamond small-particle surface.
Description
Technical field
The invention belongs to artificial diamond's preparing technical field, especially relate to a kind of Diamond crystallizer.
Background technology
Diamond is exactly the diamond that we often say, it is a kind of mineral be made up of carbon.Diamond is the hardest material of occurring in nature, is therefore also just provided with many important industrial uses, as fine grinding material, high hard parting tool, all kinds of drill bit, wortle.The formation condition of natural diamond is very harsh, and natural diamond ore deposit is very rare, and therefore adamantine price is very high.In recent years, countries in the world are all at the adamantine artificial synthesis of research.The 1950's, the U.S. is raw material with graphite, successfully produces man-made diamond at high temperature under high pressure.The environmental requirement of most artificially synthesizing diamond is higher, under the conditions such as High Temperature High Pressure diamond synthesis, but seldom have under atmospheric environment can diamond synthesis.
Summary of the invention
The object of the invention is to solve the deficiencies in the prior art part, and provide a kind of can in the Diamond crystallizer of crystalline diamonds under atmospheric environment.
The object of the invention is to be solved by following technical proposal:
A kind of Diamond crystallizer, comprise housing, it is characterized in that: enclosure interior is provided with power supply and high-voltage pulse circuit plate, described high-voltage pulse circuit plate is connected with power supply, is provided with crystallization mechanism above housing, and crystallization mechanism is connected with high-voltage pulse circuit plate and power supply;
The temperature controlled base that described crystallization mechanism includes bracing frame, is fixed on the plasma reactor on bracing frame and is located at below plasma reactor; Described plasma reactor comprises cylindrical, hollow silica tube, and silica tube top is fixed on bracing frame, and silica tube upper portion side wall is provided with quartz carrier processed and enters pipe, and described carrier enters pipe and is communicated with silica tube; Silica tube inside is provided with monomer and enters pipe, and this monomer enters pipe for cylindrical, hollow iron pipe, and described monomer enters pipe top and is fixed on bracing frame, and monomer enters pipe by wire and is connected with high-voltage pulse circuit plate; Described silica tube bottom outer wall is wound with hollow copper tubing, and hollow copper tubing is connected with high-voltage pulse circuit plate by wire; Described temperature controlled base is in immediately below silica tube, is fixed on housing, and described temperature controlled base is connected with power supply.
Housing sidewall of the present invention is provided with monomer admission port, carrier admission port, cooling water inlet and cooling water outlet, described monomer admission port is provided with a magnetic valve, carrier admission port is provided with No. two magnetic valves, and cooling water inlet is provided with No. three magnetic valves, and cooling water outlet is provided with No. four magnetic valves; Described monomer admission port and monomer enter pipe by a pipeline communication, described carrier admission port and carrier enter pipe by No. two pipeline communications, described cooling water inlet is communicated with hollow copper tubing one end by No. three pipelines, and described cooling water outlet is communicated with the hollow copper tubing the other end by No. four pipelines.
Housing of the present invention is provided with controller, and described controller is connected with a magnetic valve, No. two magnetic valves, No. three magnetic valves, No. four magnetic valves, power supply, temperature controlled base and high-voltage pulse circuit plates.
The present invention includes a domed transparent safety screen, described safety screen is set in above housing, matches with housing.
It is one-body molded that silica tube of the present invention and carrier enter pipe.
Compared to the prior art the present invention has following characteristics and beneficial effect:
1, under atmospheric environment, by high-voltage pulse circuit plate, can act on plasma reactor, after adding raw material, get final product crystalline diamonds, reaction environment is simple.
2, this device structure is simple, and cost is lower, and the diamond purity that crystallization obtains is higher, good in economic efficiency.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further details.
As shown in Figure 1, a kind of Diamond crystallizer, comprises housing 1.Housing 1 inside is provided with power supply 2 and high-voltage pulse circuit plate 3, and described high-voltage pulse circuit plate 3 is connected with power supply 2, is provided with crystallization mechanism 4 above housing 1, and crystallization mechanism 4 is connected with high-voltage pulse circuit plate 3 and power supply 2;
The temperature controlled base 7 that described crystallization mechanism 4 includes bracing frame 5, is fixed on the plasma reactor 6 on bracing frame 5 and is located at below plasma reactor 6; Described plasma reactor 6 comprises cylindrical, hollow silica tube 8, and silica tube 8 top is fixed on bracing frame 5, and silica tube 8 upper portion side wall is provided with quartz carrier processed and enters pipe 9, and described carrier enters pipe 9 and is communicated with silica tube 8; Silica tube 8 inside is provided with monomer and enters pipe 10, and this monomer enters pipe 10 for cylindrical, hollow iron pipe, and described monomer enters pipe 10 top and is fixed on bracing frame 5, and monomer enters pipe 10 by wire and is connected with high-voltage pulse circuit plate 3; Described silica tube 8 bottom outer wall is wound with hollow copper tubing 11, and hollow copper tubing 11 is connected with high-voltage pulse circuit plate 3 by wire; Described temperature controlled base 7 is in immediately below silica tube 8, is fixed on housing 1, and described temperature controlled base 7 is connected with power supply 2.
Housing 1 sidewall of the present invention is provided with monomer admission port 12, carrier admission port 13, cooling water inlet 14 and cooling water outlet 15, described monomer admission port 12 is provided with a magnetic valve, carrier admission port 13 is provided with No. two magnetic valves, cooling water inlet 14 is provided with No. three magnetic valves, and cooling water outlet 15 is provided with No. four magnetic valves; Described monomer admission port 12 and monomer enter pipe 10 by a pipeline communication 16, described carrier admission port 13 and carrier are entered pipe 9 and are communicated with by No. two pipelines 17, described cooling water inlet 14 is communicated with hollow copper tubing 11 one end by No. three pipelines 18, and described cooling water outlet 15 is communicated with hollow copper tubing 11 the other end by No. four pipelines 19.
Housing 1 of the present invention is provided with controller 20, and described controller 20 is connected with a magnetic valve, No. two magnetic valves, No. three magnetic valves, No. four magnetic valves, power supply 2, temperature controlled base 7 and high-voltage pulse circuit plates 3.
The present invention includes a domed transparent safety screen 21, described safety screen 21 is set in above housing 1, matches with housing 1.
It is one-body molded that silica tube 8 of the present invention and carrier enter pipe 9.
Under the environment of air, first on temperature controlled base 7, put into diamond small-particle, a magnetic valve and No. two magnetic valves are controlled by controller 20, making monomer and carrier enter into monomer respectively by monomer admission port 12 and carrier admission port 13 enters in pipe 10 and silica tube 8, controller 20 controls power supply opening, and starts high-voltage pulse circuit plate 3, makes monomer and carrier exist with isoionic state in silica tube 8, reconfigure, form new diamond crystal on diamond small-particle surface.Pedestal is supplied to the suitable temperature of crystallization, and is connected with water coolant at any time by cooling water inlet 14 and cooling water outlet 15 in hollow copper tubing 11, avoids hollow copper tubing 11 temperature too high.
Under safety screen 21 is protected, operator can be avoided to touch equipment when reaction, avoid security incident, and make crystalline environment relatively stable.
The present invention can under atmospheric environment, and by high-voltage pulse circuit plate 3, act on plasma reactor 6, after adding raw material, get final product crystalline diamonds, reaction environment is simple.This device structure is simple, and cost is lower, and the diamond purity that crystallization obtains is higher, good in economic efficiency.
Claims (2)
1. a Diamond crystallizer, comprises housing, it is characterized in that: enclosure interior is provided with power supply and high-voltage pulse circuit plate, and described high-voltage pulse circuit plate is connected with power supply, is provided with crystallization mechanism above housing, and crystallization mechanism is connected with high-voltage pulse circuit plate and power supply;
The temperature controlled base that described crystallization mechanism includes bracing frame, is fixed on the plasma reactor on bracing frame and is located at below plasma reactor; Described plasma reactor comprises cylindrical, hollow silica tube, and silica tube top is fixed on bracing frame, and silica tube upper portion side wall is provided with quartz carrier processed and enters pipe, and described carrier enters pipe and is communicated with silica tube; Silica tube inside is provided with monomer and enters pipe, and this monomer enters pipe for cylindrical, hollow iron pipe, and described monomer enters pipe top and is fixed on bracing frame, and monomer enters pipe by wire and is connected with high-voltage pulse circuit plate; Described silica tube bottom outer wall is wound with hollow copper tubing, and hollow copper tubing is connected with high-voltage pulse circuit plate by wire; Described temperature controlled base is in immediately below silica tube, is fixed on housing, and described temperature controlled base is connected with power supply;
Described housing sidewall is provided with monomer admission port, carrier admission port, cooling water inlet and cooling water outlet, described monomer admission port is provided with a magnetic valve, carrier admission port is provided with No. two magnetic valves, and cooling water inlet is provided with No. three magnetic valves, and cooling water outlet is provided with No. four magnetic valves; Described monomer admission port and monomer enter pipe by a pipeline communication, described carrier admission port and carrier enter pipe by No. two pipeline communications, described cooling water inlet is communicated with hollow copper tubing one end by No. three pipelines, and described cooling water outlet is communicated with the hollow copper tubing the other end by No. four pipelines;
Housing is provided with controller, and described controller is connected with a magnetic valve, No. two magnetic valves, No. three magnetic valves, No. four magnetic valves, power supply, temperature controlled base and high-voltage pulse circuit plates;
Include a domed transparent safety screen, described safety screen is set in above housing, matches with housing.
2. Diamond crystallizer according to claim 1, is characterized in that: it is one-body molded that described silica tube and carrier enter pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310469974.XA CN103508452B (en) | 2013-09-29 | 2013-09-29 | A kind of Diamond crystallizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310469974.XA CN103508452B (en) | 2013-09-29 | 2013-09-29 | A kind of Diamond crystallizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103508452A CN103508452A (en) | 2014-01-15 |
| CN103508452B true CN103508452B (en) | 2016-01-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310469974.XA Expired - Fee Related CN103508452B (en) | 2013-09-29 | 2013-09-29 | A kind of Diamond crystallizer |
Country Status (1)
| Country | Link |
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| CN (1) | CN103508452B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107215857B (en) * | 2017-07-12 | 2019-05-10 | 福州大学 | A method of graphene is quickly prepared using laser under atmospheric environment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038673A (en) * | 1988-05-25 | 1990-01-10 | 佳能株式会社 | Microwave plasma processing apparatus |
| US5368897A (en) * | 1987-04-03 | 1994-11-29 | Fujitsu Limited | Method for arc discharge plasma vapor deposition of diamond |
| CN201399098Y (en) * | 2008-12-30 | 2010-02-10 | 王龙哲 | Plasma micro-beam current generator |
| CN203486912U (en) * | 2013-09-29 | 2014-03-19 | 陈晖� | Diamond crystallizer |
-
2013
- 2013-09-29 CN CN201310469974.XA patent/CN103508452B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5368897A (en) * | 1987-04-03 | 1994-11-29 | Fujitsu Limited | Method for arc discharge plasma vapor deposition of diamond |
| CN1038673A (en) * | 1988-05-25 | 1990-01-10 | 佳能株式会社 | Microwave plasma processing apparatus |
| CN201399098Y (en) * | 2008-12-30 | 2010-02-10 | 王龙哲 | Plasma micro-beam current generator |
| CN203486912U (en) * | 2013-09-29 | 2014-03-19 | 陈晖� | Diamond crystallizer |
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| Publication number | Publication date |
|---|---|
| CN103508452A (en) | 2014-01-15 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160120 Termination date: 20160929 |