CN109112624A - It is a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer - Google Patents
It is a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer Download PDFInfo
- Publication number
- CN109112624A CN109112624A CN201710488874.XA CN201710488874A CN109112624A CN 109112624 A CN109112624 A CN 109112624A CN 201710488874 A CN201710488874 A CN 201710488874A CN 109112624 A CN109112624 A CN 109112624A
- Authority
- CN
- China
- Prior art keywords
- furnace body
- outer cylinder
- furnace
- cooling water
- flange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 56
- 239000000498 cooling water Substances 0.000 claims abstract description 39
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 239000011229 interlayer Substances 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000008676 import Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 2
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 239000005049 silicon tetrachloride Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention provides a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, including furnace body inner cylinder, furnace body outer cylinder, and the helical form deflector in the interlayer cavity being set between the furnace body inner cylinder and furnace body outer cylinder；Furnace body outer cylinder bottom is provided with the first cooling water inlet, can import cooling water in the interlayer cavity between furnace body inner cylinder and furnace body outer cylinder, and flow along helical form deflector spiral；It is provided with the first cooling water outlet at the top of the furnace body outer cylinder, the cooling water in the interlayer cavity between furnace body inner cylinder and furnace body outer cylinder can be exported.The pressure (hydraulic) water water conservancy diversion of in-furnace temperature and furnace body can be maintained cooling and the local water cooling of double glass viewing mirror.
Description
Technical field
The present invention relates to the polycrystalline furnaces of production solar level high-efficiency polycrystalline silicon wafer.
Background technique
Currently, the production technology for preparing silicon for solar cell ingot mainly includes that pulling single crystal silicon and polysilicon are drawn.It is more
Crystal silicon ingot casting technology due to can directly founding go out to be suitable for the square silicon ingot of large-scale production, manufacturing process it is relatively easy, from forming
For the main stream approach of silicon for solar cell ingot preparation.Polycrystalline silicon ingot casting technology is usually applied in polycrystalline furnace.
Reduction furnace is the core equipment and decision systems production capacity energy consumption, environmental protection index for producing polysilicon, and reliably,
The key factor of safety.Trichlorosilane restores in polycrystalline furnace generates polycrystalline silicon rod, while also generating silicon tetrachloride, chlorination
Hydrogen, hydrogen etc..Untreated silicon tetrachloride is a kind of liquid for having extremely strong corrosivity, being difficult to save.By by silicon tetrachloride
Continuous hydrogenation generates the recycling such as trichlorosilane, hydrogen chloride and uses in hydrogenation furnace, can recycle benefit with rectifying by repeatedly recycling
With most silicon, reduces cost, reduces pollution.In addition to a small number of producers, most domestic does not all build up tail gas hydrogenation recycling system
System, causes China's production of polysilicon cost to remain high, and seriously polluted.
It is hydrogenating and is restoring in process, electric energy heating electrode is needed to maintain 1000 DEG C or more the conditions of high temperature in furnace, thus it is more
The safe handling and service life of the cooling direct relation reacting furnace of crystalline substance reaction furnace body.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of for producing the more of solar level high-efficiency polycrystalline silicon wafer
Brilliant furnace can maintain the pressure (hydraulic) water water conservancy diversion of in-furnace temperature and furnace body cooling and the local water cooling of double glass viewing mirror.
The technical scheme is that a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, including furnace body
Helical form deflector in inner cylinder, furnace body outer cylinder, and the interlayer cavity that is set between the furnace body inner cylinder and furnace body outer cylinder；Institute
It states furnace body outer cylinder bottom and is provided with the first cooling water inlet, cooling water can be imported to the folder between furnace body inner cylinder and furnace body outer cylinder
In layer cavity, and flowed along helical form deflector spiral；The first cooling water outlet, energy are provided at the top of the furnace body outer cylinder
Enough cooling waters by the interlayer cavity between furnace body inner cylinder and furnace body outer cylinder export.
Further, bottom of furnace body is provided with flange in the bottom.
Further, water-cooling double glass viewing mirror is provided on furnace body.
Further, the water-cooling double glass viewing mirror includes passing through spaced glass outer and inner glass, institute
It states and passes through casing off between glass outer and inner glass；Second flange, the second flange one are cased on the outside of described sleeve pipe
Side is provided with third cooling water inlet, and the opposite other side is provided with third cooling water outlet.
Further, the two sides of the second flange axial direction are respectively arranged with first flange and third flange, and described first
Flange, second flange and third flange are fixedly connected by screw bolt and nut.
Further, the inner glass is provided with the double glass viewing mirror inner cylinder that can pass through furnace body towards furnace body side
With double glass viewing mirror outer cylinder；Double glass viewing mirror outer cylinder side is provided with the second cooling water inlet, can be by cooling water
It imports in the interlayer cavity between double glass viewing mirror inner cylinder and double glass viewing mirror outer cylinder；The double glass viewing mirror outer cylinder phase
Pair the other side be provided with the second cooling water outlet, can will be between double glass viewing mirror inner cylinder and double glass viewing mirror outer cylinder
Cooling water export in interlayer cavity.
The beneficial effects of the present invention are: inside, in outer cylinder sealing cavity be arranged helical form deflector, pressurize cooling water in sky
It is intracavitary to be flowed along deflector direction, inner cylinder, the external visor of furnace body are cooled down, guarantee its work at reliable temperature
Make.Water-cooling double glass viewing mirror is set on outer cylinder, it can be with the growing state of silicon rod in inspection section body by visor.It can maintain furnace
Interior temperature, and guarantee the local water cooling of pressure (hydraulic) water the water conservancy diversion cooling and double glass viewing mirror of furnace body.
Detailed description of the invention
Fig. 1 is overall structure diagram of the invention；
Fig. 2 is the structure chart of water-cooling double glass viewing mirror.
In figure: 1 is the first cooling water outlet, and 2 be furnace body inner cylinder, and 3 be furnace body outer cylinder, and 4 be deflector, and 5 be water cooled double-layered
Glass mirror, 6 be the first cooling water inlet, and 7 be flange in the bottom, and 8 be the second cooling water inlet, and 9 be third cooling water inlet, 10
It is bolt for nut, 11,12 be glass outer, and 13 be inner glass, and 14 be first flange, and 15 be second flange, and 16 be third
Cooling water outlet, 17 be third flange, and 18 be the second cooling water outlet, and 19 be double glass viewing mirror inner cylinder, and 20 be double glazing
Visor outer cylinder.
Specific embodiment
Following further describes the present invention with reference to the drawings.
As shown in Figure 1, a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, including furnace body inner cylinder 2, furnace body
Helical form deflector 4 in outer cylinder 3, and the interlayer cavity that is set between furnace body inner cylinder 2 and furnace body outer cylinder 3.Bottom of furnace body is set
It is equipped with flange in the bottom 7.3 bottom of furnace body outer cylinder is provided with the first cooling water inlet 6, cooling water can be imported 2 He of furnace body inner cylinder
In interlayer cavity between furnace body outer cylinder 3, and flowed along 4 spiral of helical form deflector.Is provided at the top of furnace body outer cylinder 3
One cooling water outlet 1 can export the cooling water in the interlayer cavity between furnace body inner cylinder 2 and furnace body outer cylinder 3.
As shown in Fig. 2, being provided with water-cooling double glass viewing mirror 5 on furnace body.Water-cooling double glass viewing mirror 5 includes passing through interval
The glass outer 12 and inner glass 13 of setting, pass through casing off between glass outer 12 and inner glass 13.Outside of sleeve
It is cased with second flange 15,15 side of second flange is provided with third cooling water inlet 9, and it is cooling that the opposite other side is provided with third
Water out 16.
Inner glass 13 is provided with the double glass viewing mirror inner cylinder 19 and the double-deck glass that can pass through furnace body towards furnace body side
Glass visor outer cylinder 20.20 side of double glass viewing mirror outer cylinder is provided with the second cooling water inlet 8, can import cooling water double-deck
In interlayer cavity between glass mirror inner cylinder 19 and double glass viewing mirror outer cylinder 20.Opposite another of double glass viewing mirror outer cylinder 20
Side is provided with the second cooling water outlet 18, can will be between double glass viewing mirror inner cylinder 19 and double glass viewing mirror outer cylinder 20
Cooling water export in interlayer cavity.
As preferred embodiment, the axial two sides of second flange 15 are respectively arranged with first flange 14 and third flange
17, first flange 14, second flange 15 and third flange 17 are fixedly connected by bolt 11 with nut 10.
The present invention can maintain the pressure (hydraulic) water water conservancy diversion of in-furnace temperature and furnace body cooling and the office of double glass viewing mirror
Portion's water cooling.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (6)
1. a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, it is characterised in that: including furnace body inner cylinder (2), furnace
Helical form deflector in external cylinder (3), and the interlayer cavity that is set between the furnace body inner cylinder (2) and furnace body outer cylinder (3)
(4)；Furnace body outer cylinder (3) bottom is provided with the first cooling water inlet (6), can by cooling water import furnace body inner cylinder (2) and
In interlayer cavity between furnace body outer cylinder (3), and flowed along helical form deflector (4) spiral；Furnace body outer cylinder (3) top
Portion is provided with the first cooling water outlet (1), can will be cold in the interlayer cavity between furnace body inner cylinder (2) and furnace body outer cylinder (3)
But water exports.
2. according to claim 1 a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, it is characterised in that:
Bottom of furnace body is provided with flange in the bottom (7).
3. according to claim 1 a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, it is characterised in that:
Water-cooling double glass viewing mirror (5) are provided on furnace body.
4. according to claim 3 a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, it is characterised in that:
The water-cooling double glass viewing mirror (5) includes passing through spaced glass outer (12) and inner glass (13), the outer layer
Pass through casing off between glass (12) and inner glass (13)；It is cased with second flange (15) on the outside of described sleeve pipe, described second
Flange (15) side is provided with third cooling water inlet (9), and the opposite other side is provided with third cooling water outlet (16).
5. according to claim 4 a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, it is characterised in that:
The two sides of second flange (15) axial direction are respectively arranged with first flange (14) and third flange (17), the first flange
(14), second flange (15) is fixedly connected by bolt (11) with nut (10) with third flange (17).
6. according to claim 4 a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer, it is characterised in that:
The inner glass (13) is provided with the double glass viewing mirror inner cylinder (19) and the double-deck glass that can pass through furnace body towards furnace body side
Glass visor outer cylinder (20)；Double glass viewing mirror outer cylinder (20) side is provided with the second cooling water inlet (8), can be by cooling
Water imports in the interlayer cavity between double glass viewing mirror inner cylinder (19) and double glass viewing mirror outer cylinder (20)；The double glazing
The opposite other side of visor outer cylinder (20) is provided with the second cooling water outlet (18), can by double glass viewing mirror inner cylinder (19) and
Cooling water export in interlayer cavity between double glass viewing mirror outer cylinder (20).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710488874.XA CN109112624A (en) | 2017-06-23 | 2017-06-23 | It is a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710488874.XA CN109112624A (en) | 2017-06-23 | 2017-06-23 | It is a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109112624A true CN109112624A (en) | 2019-01-01 |
Family
ID=64732317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710488874.XA Pending CN109112624A (en) | 2017-06-23 | 2017-06-23 | It is a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109112624A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110983440A (en) * | 2019-12-25 | 2020-04-10 | 南京晶升能源设备有限公司 | Hydraulic power rotational flow cooling induction heating vacuum furnace body |
| CN112281212A (en) * | 2020-11-10 | 2021-01-29 | 无锡双雄通用机械有限公司 | Polycrystalline silicon growth furnace |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003146641A (en) * | 2001-11-20 | 2003-05-21 | Sumitomo Titanium Corp | Reaction furnace for manufacturing high-purity silicon and method of manufacturing high-purity silicon |
| CN201180088Y (en) * | 2008-03-12 | 2009-01-14 | 江苏双良锅炉有限公司 | Novel polysilicon reduction furnace for fast-open type, water cooling structure |
| CN201180089Y (en) * | 2008-03-12 | 2009-01-14 | 江苏双良锅炉有限公司 | Water cooling double-layer glass viewing mirror of novel polysilicon reduction furnace |
| CN102424387A (en) * | 2011-09-06 | 2012-04-25 | 江苏中圣高科技产业有限公司 | Uniform temperature type polysilicon reducing furnace |
-
2017
- 2017-06-23 CN CN201710488874.XA patent/CN109112624A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003146641A (en) * | 2001-11-20 | 2003-05-21 | Sumitomo Titanium Corp | Reaction furnace for manufacturing high-purity silicon and method of manufacturing high-purity silicon |
| CN201180088Y (en) * | 2008-03-12 | 2009-01-14 | 江苏双良锅炉有限公司 | Novel polysilicon reduction furnace for fast-open type, water cooling structure |
| CN201180089Y (en) * | 2008-03-12 | 2009-01-14 | 江苏双良锅炉有限公司 | Water cooling double-layer glass viewing mirror of novel polysilicon reduction furnace |
| CN102424387A (en) * | 2011-09-06 | 2012-04-25 | 江苏中圣高科技产业有限公司 | Uniform temperature type polysilicon reducing furnace |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110983440A (en) * | 2019-12-25 | 2020-04-10 | 南京晶升能源设备有限公司 | Hydraulic power rotational flow cooling induction heating vacuum furnace body |
| CN112281212A (en) * | 2020-11-10 | 2021-01-29 | 无锡双雄通用机械有限公司 | Polycrystalline silicon growth furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101254921B (en) | Method for preparing trichlorosilane and polycrystalline silicon by transforming silicon tetrachloride | |
| CN102424386B (en) | Efficient energy-saving type polysilicon reduction furnace | |
| CN106044849B (en) | The technique that nano-metal-oxide powder is prepared using direct current plasma method | |
| CN109112624A (en) | It is a kind of for producing the polycrystalline furnace of solar level high-efficiency polycrystalline silicon wafer | |
| CN203006955U (en) | 72-cobar polycrystalline silicon reduction furnace | |
| CN100575843C (en) | Polycrystalline silicon reducing furnace water-cooling double glass viewing mirror | |
| CN102424387B (en) | Uniform temperature type polysilicon reducing furnace | |
| CN102515167B (en) | Periodical alternatively operating polycrystalline silicon reduction furnace equipped with inner heat-insulating barrel and operation method | |
| CN207109143U (en) | A kind of polycrystalline furnace for being used to produce solar level high-efficiency polycrystalline silicon chip | |
| CN203319708U (en) | Polysilicon manufacturing device | |
| CN204607590U (en) | Polysilicon deposition stove | |
| CN201214631Y (en) | Polysilicon reduction furnace | |
| CN103172067B (en) | Cold wall fluidized bed and application thereof | |
| CN101830467B (en) | Polycrystalline silicon decomposing furnace | |
| CN201648567U (en) | Polysilicon decomposing furnace | |
| CN102485649B (en) | Polysilicon hydrogenation furnace | |
| CN201525754U (en) | Polysilicon experiment reduction furnace | |
| CN101759187A (en) | Preparation method and device for solar-grade polycrystalline silicon | |
| CN102674360B (en) | Heat insulation inner liner of energy-saving polycrystalline silicon reduction furnace provided with polycrystalline silicon slice, and implementation method thereof | |
| CN201678457U (en) | Heat transfer oil silicon chip jacking device for polycrystalline silicon decomposing furnace | |
| CN104609425B (en) | The equipment that a kind of silane thermal decomposition process prepares polysilicon | |
| CN201180089Y (en) | Water cooling double-layer glass viewing mirror of novel polysilicon reduction furnace | |
| CN204251760U (en) | Thermal field of czochralski silicon | |
| CN1245145A (en) | Boiling chloration method for preparing ZrCl4 | |
| CN208995147U (en) | A kind of polycrystalline silicon reducing furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190101 |