CN103508452A - Diamond crystallizer - Google Patents
Diamond crystallizer Download PDFInfo
- Publication number
- CN103508452A CN103508452A CN201310469974.XA CN201310469974A CN103508452A CN 103508452 A CN103508452 A CN 103508452A CN 201310469974 A CN201310469974 A CN 201310469974A CN 103508452 A CN103508452 A CN 103508452A
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- Prior art keywords
- voltage pulse
- pulse circuit
- monomer
- diamond
- silica tube
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Abstract
The invention belongs to the technical field of artificial diamond preparation, and particularly relates to a diamond crystallizer. The diamond crystallizer comprises a shell, wherein a power supply and a high voltage pulse circuit board are arranged inside the shell; the high voltage pulse circuit board is connected with the power supply; a crystallizing mechanism is arranged above the shell and connected with the high voltage pulse circuit board and the power supply; the crystallizing mechanism comprises a plasma reactor and a temperature control base which is arranged below the plasma reactor; the plasma reactor comprises a cylindrical hollow quartz tube; a quartz-made carrier induction pipe is arranged on the side wall at the upper part of the quartz tube and communicated with the quartz tube; a monomer induction pipe is arranged inside the quartz tube and connected with the high voltage pulse circuit board through a guide line; a hollow copper tube is enwound on the outer wall at the lower part of the quartz tube and connected with the high voltage pulse circuit board through a guide line. In the atmospheric environment, by virtue of the diamond crystallizer, high-purity diamond crystals can be formed on the surfaces of small particles of the diamond.
Description
Technical field
The invention belongs to artificial diamond's preparing technical field, especially relate to a kind of diamond crystalline machine.
Background technology
Diamond is exactly the diamond that we often say, it is a kind of mineral that are comprised of carbon.Diamond is the hardest material of occurring in nature, has therefore also just had many important industrial uses, as fine grinding material, high hard parting tool, all kinds of drill bit, wortle.The formation condition of natural diamond is very harsh, and natural diamond ore deposit is very rare, and therefore adamantine price is very high.In recent years, countries in the world are all at the adamantine artificial synthesis of research.The 1950's, graphite be take as raw material in the U.S., successfully produces man-made diamond under High Temperature High Pressure.Mostly the environmental requirement of artificially synthesizing diamond is higher, be under the conditions such as High Temperature High Pressure diamond synthesis, can diamond synthesis under atmospheric environment but seldom have.
Summary of the invention
The object of the invention is to solve the deficiencies in the prior art part, and provide a kind of can be at the adamantine diamond crystalline machine of crystallization under atmospheric environment.
The object of the invention is to solve by following technical proposal:
A machine, comprises housing, it is characterized in that: enclosure interior is provided with power supply and high-voltage pulse circuit plate, and described high-voltage pulse circuit plate is connected with power supply, and housing top is provided with crystallization mechanism, and crystallization mechanism is connected with power supply with high-voltage pulse circuit plate;
Described crystallization mechanism includes bracing frame, be fixed on the plasma reactor on bracing frame and be located at the temperature control pedestal of plasma reactor below; Described plasma reactor comprises cylindrical hollow silica tube, and silica tube top is fixed on bracing frame, and silica tube upper portion side wall is provided with quartzy carrier processed and enters pipe, and described carrier enters pipe and silica tube is communicated with; Silica tube inside is provided with monomer and enters pipe, and this monomer enters pipe for cylindrical hollow iron pipe, and described monomer enters pipe top and is fixed on bracing frame, and monomer enters pipe and is connected with high-voltage pulse circuit plate by wire; On the outer wall of described silica tube bottom, be wound with hollow copper tubing, hollow copper tubing is connected with high-voltage pulse circuit plate by wire; Described temperature control pedestal, under silica tube, is fixed on housing, and described temperature control pedestal is connected with power supply.
Housing sidewall of the present invention is provided with monomer admission port, carrier admission port, cooling water inlet and cooling water outlet, described monomer admission port is provided with magnetic valve, a carrier admission port and is provided with magnetic valve No. two, and cooling water inlet is provided with magnetic valve No. three, and cooling water outlet is provided with magnetic valve No. four; Described monomer admission port and monomer enter pipe by a pipeline communication, described carrier admission port and carrier enter pipe by No. two pipeline communications, described cooling water inlet is communicated with by No. three pipelines and hollow copper tubing one end, and described cooling water outlet is communicated with by No. four pipelines and the hollow copper tubing the other end.
Housing of the present invention is provided with controller, and described controller is connected with a magnetic valve, No. two magnetic valves, No. three magnetic valves, No. four magnetic valves, power supply, temperature control pedestal and high-voltage pulse circuit plates.
The present invention includes a transparent safety screen of semisphere, described safety screen is set in housing top, matches with housing.
It is one-body molded that silica tube of the present invention and carrier enter pipe.
Compared to the prior art the present invention has following characteristics and beneficial effect:
1, can under atmospheric environment, by high-voltage pulse circuit plate, act on plasma reactor, add after raw material, get final product mat gold hard rock, reaction environment is simple.
2, this device structure is simple, and cost is lower, and the diamond purity that crystallization obtains is higher, good in economic efficiency.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further details.
As shown in Figure 1, a kind of diamond crystalline machine, comprises housing 1.Housing 1 inside is provided with power supply 2 and high-voltage pulse circuit plate 3, and described high-voltage pulse circuit plate 3 is connected with power supply 2, and housing 1 top is provided with crystallization mechanism 4, and crystallization mechanism 4 is connected with power supply 2 with high-voltage pulse circuit plate 3;
Described crystallization mechanism 4 includes bracing frame 5, be fixed on the plasma reactor 6 on bracing frame 5 and be located at the temperature control pedestal 7 of plasma reactor 6 belows; Described plasma reactor 6 comprises cylindrical hollow silica tube 8, and silica tube 8 tops are fixed on bracing frame 5, and silica tube 8 upper portion side wall are provided with quartzy carrier processed and enter pipe 9, and described carrier enters pipe 9 and silica tube 8 is communicated with; Silica tube 8 inside are provided with monomer and enter pipe 10, and this monomer enters pipe 10 for cylindrical hollow iron pipe, and described monomer enters Guan10 top and is fixed on bracing frame 5, and monomer enters pipe 10 and is connected with high-voltage pulse circuit plate 3 by wire; On described silica tube 8 bottom outer walls, be wound with hollow copper tubing 11, hollow copper tubing 11 is connected with high-voltage pulse circuit plate 3 by wire; Described temperature control pedestal 7, under silica tube 8, is fixed on housing 1, and described temperature control pedestal 7 is connected with power supply 2.
Housing 1 sidewall of the present invention is provided with monomer admission port 12, carrier admission port 13, cooling water inlet 14 and cooling water outlet 15, described monomer admission port 12 is provided with magnetic valve, a carrier admission port 13 and is provided with magnetic valve No. two, cooling water inlet 14 is provided with magnetic valve No. three, and cooling water outlet 15 is provided with magnetic valve No. four; Described monomer admission port 12 and monomer enter pipe 10 by a pipeline communication 16, described carrier admission port 13 and carrier enter pipe 9 and are communicated with by No. two pipelines 17, described cooling water inlet 14 is communicated with by No. three pipelines 18 and hollow copper tubing 11 one end, and described cooling water outlet 15 is communicated with by No. four pipelines 19 and hollow copper tubing 11 the other ends.
Housing 1 of the present invention is provided with controller 20, and described controller 20 is connected with a magnetic valve, No. two magnetic valves, No. three magnetic valves, No. four magnetic valves, power supply 2, temperature control pedestal 7 and high-voltage pulse circuit plates 3.
The present invention includes a transparent safety screen 21 of semisphere, described safety screen 21 is set in housing 1 top, matches with housing 1.
It is one-body molded that silica tube 8 of the present invention and carrier enter pipe 9.
Under the environment of atmosphere, first on temperature control pedestal 7, put into diamond small-particle, by controller 20, control a magnetic valve and No. two magnetic valves, making monomer and carrier by monomer admission port 12 and carrier admission port 13, enter into monomer respectively enters in pipe 10 and silica tube 8, controller 20 is controlled power supply opening, and starts high-voltage pulse circuit plate 3, makes monomer and carrier exist with isoionic state in silica tube 8, reconfigure, on diamond small-particle surface, form new diamond crystal.Pedestal offers the suitable temperature of crystallization, and by cooling water inlet 14 and cooling water outlet 15, is connected with at any time water coolant in hollow copper tubing 11, avoids hollow copper tubing 11 excess Temperatures.
Under safety screen 21 protections, can avoid operator to touch equipment in reaction, avoided security incident, and made crystalline environment relatively stable.
The present invention can by high-voltage pulse circuit plate 3, act on plasma reactor 6 under atmospheric environment, adds after raw material, gets final product mat gold hard rock, and reaction environment is simple.This device structure is simple, and cost is lower, and the diamond purity that crystallization obtains is higher, good in economic efficiency.
Claims (5)
1. a diamond crystalline machine, comprises housing, it is characterized in that: enclosure interior is provided with power supply and high-voltage pulse circuit plate, and described high-voltage pulse circuit plate is connected with power supply, and housing top is provided with crystallization mechanism, and crystallization mechanism is connected with power supply with high-voltage pulse circuit plate;
Described crystallization mechanism includes bracing frame, be fixed on the plasma reactor on bracing frame and be located at the temperature control pedestal of plasma reactor below; Described plasma reactor comprises cylindrical hollow silica tube, and silica tube top is fixed on bracing frame, and silica tube upper portion side wall is provided with quartzy carrier processed and enters pipe, and described carrier enters pipe and silica tube is communicated with; Silica tube inside is provided with monomer and enters pipe, and this monomer enters pipe for cylindrical hollow iron pipe, and described monomer enters pipe top and is fixed on bracing frame, and monomer enters pipe and is connected with high-voltage pulse circuit plate by wire; On the outer wall of described silica tube bottom, be wound with hollow copper tubing, hollow copper tubing is connected with high-voltage pulse circuit plate by wire; Described temperature control pedestal, under silica tube, is fixed on housing, and described temperature control pedestal is connected with power supply.
2. diamond crystalline machine according to claim 1, it is characterized in that: described housing sidewall is provided with monomer admission port, carrier admission port, cooling water inlet and cooling water outlet, described monomer admission port is provided with magnetic valve, a carrier admission port and is provided with magnetic valve No. two, cooling water inlet is provided with magnetic valve No. three, and cooling water outlet is provided with magnetic valve No. four; Described monomer admission port and monomer enter pipe by a pipeline communication, described carrier admission port and carrier enter pipe by No. two pipeline communications, described cooling water inlet is communicated with by No. three pipelines and hollow copper tubing one end, and described cooling water outlet is communicated with by No. four pipelines and the hollow copper tubing the other end.
3. diamond crystalline machine according to claim 1, is characterized in that: housing is provided with controller, and described controller is connected with a magnetic valve, No. two magnetic valves, No. three magnetic valves, No. four magnetic valves, power supply, temperature control pedestal and high-voltage pulse circuit plates.
4. diamond crystalline machine according to claim 1, is characterized in that: include a transparent safety screen of semisphere, described safety screen is set in housing top, matches with housing.
5. diamond crystalline machine according to claim 1, is characterized in that: it is one-body molded that described silica tube and carrier enter pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310469974.XA CN103508452B (en) | 2013-09-29 | 2013-09-29 | A kind of Diamond crystallizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310469974.XA CN103508452B (en) | 2013-09-29 | 2013-09-29 | A kind of Diamond crystallizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103508452A true CN103508452A (en) | 2014-01-15 |
| CN103508452B CN103508452B (en) | 2016-01-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310469974.XA Expired - Fee Related CN103508452B (en) | 2013-09-29 | 2013-09-29 | A kind of Diamond crystallizer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103508452B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107215857A (en) * | 2017-07-12 | 2017-09-29 | 福州大学 | A kind of method for quickly preparing graphene using laser under atmospheric environment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038673A (en) * | 1988-05-25 | 1990-01-10 | 佳能株式会社 | Microwave plasma processing apparatus |
| US5368897A (en) * | 1987-04-03 | 1994-11-29 | Fujitsu Limited | Method for arc discharge plasma vapor deposition of diamond |
| CN201399098Y (en) * | 2008-12-30 | 2010-02-10 | 王龙哲 | Plasma micro-beam current generator |
| CN203486912U (en) * | 2013-09-29 | 2014-03-19 | 陈晖� | Diamond crystallizer |
-
2013
- 2013-09-29 CN CN201310469974.XA patent/CN103508452B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5368897A (en) * | 1987-04-03 | 1994-11-29 | Fujitsu Limited | Method for arc discharge plasma vapor deposition of diamond |
| CN1038673A (en) * | 1988-05-25 | 1990-01-10 | 佳能株式会社 | Microwave plasma processing apparatus |
| CN201399098Y (en) * | 2008-12-30 | 2010-02-10 | 王龙哲 | Plasma micro-beam current generator |
| CN203486912U (en) * | 2013-09-29 | 2014-03-19 | 陈晖� | Diamond crystallizer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107215857A (en) * | 2017-07-12 | 2017-09-29 | 福州大学 | A kind of method for quickly preparing graphene using laser under atmospheric environment |
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| Publication number | Publication date |
|---|---|
| CN103508452B (en) | 2016-01-20 |
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Granted publication date: 20160120 Termination date: 20160929 |