CN201479018U - IGBT direct-current power source for single crystal silicon furnace - Google Patents
IGBT direct-current power source for single crystal silicon furnace Download PDFInfo
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- CN201479018U CN201479018U CN2009201439792U CN200920143979U CN201479018U CN 201479018 U CN201479018 U CN 201479018U CN 2009201439792 U CN2009201439792 U CN 2009201439792U CN 200920143979 U CN200920143979 U CN 200920143979U CN 201479018 U CN201479018 U CN 201479018U
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- igbt
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Abstract
The utility model relates to a direct-current power source, in particular to an IGBT direct-current power source for a single crystal silicon furnace, which is characterized by comprising a bridge type rectifying circuit. An input end of the bridge type rectifying circuit is connected with an alternating-current power source, an output end of the bridge type rectifying circuit is connected with a high-frequency inverter circuit through an LC filter circuit so as to invert direct current after being rectified and filtered into alternating current, an output end of the high-frequency inverter circuit is connected with an input end of a high-frequency transformer, and an output end of the high-frequency transformer is connected with an inductance filter circuit through the rectifying circuit. Compared with a traditional silicon-controlled power source, the IGBT direct-current power source has the following advantages that the IGBT direct-current power source is small in volume and low in duty ratio without space occupation, harmonic pollution, high-power transformer loss power or reactive power, saves power about 30% compared with a silicon-controlled form, has pulsation coefficient RMS lower than 3%, and is small in crystal drawing pattern wave.
Description
Technical field
The utility model relates to DC power supply, especially monocrystaline silicon stove IGBT DC power supply.
Background technology
Monocrystalline silicon growing furnace (monocrystaline silicon stove) is widely used in the use of numerous manufacture of materials such as monocrystalline silicon, monocrystalline germanium, monocrystalline GaAs at present, is production solar energy power generating, electronics industry and the raw-material visual plant of other hi-tech industries.What monocrystaline silicon stove adopted at present mainly is the controllable silicon DC power supply, and its volume is bigger usually, and the high-power transformer power consumption that it has is also very big, and is easy to generate harmonic pollution.
The utility model content
The purpose of this utility model provides that a kind of volume is little, no-harmonic wave pollution, than the monocrystaline silicon stove IGBT DC power supply of SCR control mode power saving.
For achieving the above object, the technical solution adopted in the utility model is:
A kind of monocrystaline silicon stove IGBT DC power supply, its special feature is, comprise the bridge rectifier that its input is connected with AC power, thereby it will be alternating current through the dc inverter behind the rectifying and wave-filtering that the output of this bridge rectifier connects high-frequency inverter circuit by the LC filter circuit, the output of this high-frequency inverter circuit is connected with the input of a high frequency transformer, thereby the output of this high frequency transformer is connected with the inductor filter circuit for output by rectification circuit.
Wherein high-frequency inverter circuit is to be the full bridge inverter of power switch pipe with IGBT.
Wherein high-frequency inverter circuit inversion operating frequency is 20-25KHZ.
Wherein the diode in the bridge rectifier is Schottky diode.
Wherein the rectification circuit of high frequency transformer rear end is a bridge rectifier.
Further, wherein also be connected to air switch and fuse between AC power and the bridge rectifier.
The utility model power supply is compared this project IGBT DC power system with traditional thyristor supply its main performance advantage is as follows:
1, volume is little, does not take up space;
2, no-harmonic wave pollution does not need the harmonic compensation cabinet;
3, no high-power transformer loss power (about 135 yuan/every stove of high-power transformer itself the meeting power consumption 3-8% electricity charge usually);
4, do not have reactive power, duty ratio is little;
5, than SCR control mode power saving about 30%;
6, pulsation rate RMS＜3% (controllable silicon RMS＞4%), the crystal pulling ripple is little.
Description of drawings
Accompanying drawing 1 is a theory diagram of the present utility model.
Embodiment
Come the utility model is described in further detail below in conjunction with accompanying drawing:
As shown in Figure 1, the utility model comprises the bridge rectifier that its input is connected with AC power, diode in the bridge rectifier can be Schottky diode, its conduction voltage drop only is 1/2 or 1/3 of a general-purpose diode, and the shutoff of its electric current is far smaller than general-purpose diode recovery time, and the efficient that this has also improved power supply is beneficial to the realization of the soft switch of inversion, improve the operating state of inverter bridge, improved reliability.
Thereby it will be alternating current through the dc inverter behind the rectifying and wave-filtering that the output of this bridge rectifier connects high-frequency inverter circuit by the LC filter circuit, specifically adopting with IGBT is the full bridge inverter of power switch pipe, and wherein high-frequency inverter circuit inversion operating frequency is 20-25KHZ.Its advantage is: a, switching frequency are greater than people's audibility range, noiselessness.B, give full play to the characteristic of IGBT power tube, reduce the transformer cost at this frequency band.C, volume of transformer is little, weight is clear, loss is low, and this also is to adopt silicon-controlled voltage regulation mode bridge rectifier or six phase double reverse-stars type rectifier transformers incomparable, has improved the efficient of power supply.
The output of this high-frequency inverter circuit is connected with the input of a high frequency transformer, the output of this high frequency transformer is connected by rectification circuit (can adopt bridge rectifier) thereby with the inductor filter circuit for output, adopt inductor filter can improve output waveform, reduce electromagnetic interference.
Between AC power and bridge rectifier, also be connected to air switch and fuse in addition.
Claims (6)
1. monocrystaline silicon stove IGBT DC power supply, it is characterized in that: comprise the bridge rectifier that its input is connected with AC power, thereby it will be alternating current through the dc inverter behind the rectifying and wave-filtering that the output of this bridge rectifier connects high-frequency inverter circuit by the LC filter circuit, the output of this high-frequency inverter circuit is connected with the input of a high frequency transformer, thereby the output of this high frequency transformer is connected with the inductor filter circuit for output by rectification circuit.
2. monocrystaline silicon stove IGBT DC power supply as claimed in claim 1 is characterized in that: wherein high-frequency inverter circuit is to be the full bridge inverter of power switch pipe with IGBT.
3. monocrystaline silicon stove IGBT DC power supply as claimed in claim 1 is characterized in that: wherein high-frequency inverter circuit inversion operating frequency is 20-25KHZ.
4. monocrystaline silicon stove IGBT DC power supply as claimed in claim 1, it is characterized in that: wherein the diode in the bridge rectifier is Schottky diode.
5. monocrystaline silicon stove IGBT DC power supply as claimed in claim 1 is characterized in that: wherein the rectification circuit of high frequency transformer rear end is a bridge rectifier.
6. as any described monocrystaline silicon stove IGBT DC power supply in the claim 1 to 5, it is characterized in that: wherein also be connected to air switch and fuse between AC power and the bridge rectifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201439792U CN201479018U (en) | 2009-08-07 | 2009-08-07 | IGBT direct-current power source for single crystal silicon furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201439792U CN201479018U (en) | 2009-08-07 | 2009-08-07 | IGBT direct-current power source for single crystal silicon furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201479018U true CN201479018U (en) | 2010-05-19 |
Family
ID=42415272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201439792U Expired - Lifetime CN201479018U (en) | 2009-08-07 | 2009-08-07 | IGBT direct-current power source for single crystal silicon furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201479018U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097954A (en) * | 2011-03-04 | 2011-06-15 | 山东大学 | Current feed type high-power high-frequency high-voltage switching power supply main circuit |
| CN102969897A (en) * | 2011-09-01 | 2013-03-13 | 江苏正强电气有限公司 | Digital large-power high-frequency inversion controller for direct-current power supply and method of controller |
-
2009
- 2009-08-07 CN CN2009201439792U patent/CN201479018U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097954A (en) * | 2011-03-04 | 2011-06-15 | 山东大学 | Current feed type high-power high-frequency high-voltage switching power supply main circuit |
| CN102969897A (en) * | 2011-09-01 | 2013-03-13 | 江苏正强电气有限公司 | Digital large-power high-frequency inversion controller for direct-current power supply and method of controller |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: NINGXIA RIJING NEW ENERGY EQUIPMENT CO., LTD. Free format text: FORMER NAME: NINGXIA RIJING ELECTRONIC TECHNOLOGY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 753000, No. 16, Xin Sheng Road, Shizuishan Economic Development Zone, the Ningxia Hui Autonomous Region Patentee after: Ningxia Rijing New Energy Euipment Co., Ltd. Address before: 753000, No. 18, Xin Sheng Road, Ningxia Economic Development Zone, Dawukou District, the Ningxia Hui Autonomous Region, Shizuishan, Shizuishan Patentee before: Ningxia Rijing Electronic Science & Technology Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20100519 |
|
| CX01 | Expiry of patent term |