JPS58154286A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58154286A
JPS58154286A JP57037381A JP3738182A JPS58154286A JP S58154286 A JPS58154286 A JP S58154286A JP 57037381 A JP57037381 A JP 57037381A JP 3738182 A JP3738182 A JP 3738182A JP S58154286 A JPS58154286 A JP S58154286A
Authority
JP
Japan
Prior art keywords
layer
substrate
semiconductor element
silicon dioxide
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57037381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH026237B2 (enEXAMPLES
Inventor
Tatsuyuki Sanada
真田　達行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57037381A priority Critical patent/JPS58154286A/ja
Publication of JPS58154286A publication Critical patent/JPS58154286A/ja
Publication of JPH026237B2 publication Critical patent/JPH026237B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Lasers (AREA)
JP57037381A 1982-03-10 1982-03-10 半導体装置 Granted JPS58154286A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57037381A JPS58154286A (ja) 1982-03-10 1982-03-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57037381A JPS58154286A (ja) 1982-03-10 1982-03-10 半導体装置

Publications (2)

Publication Number Publication Date
JPS58154286A true JPS58154286A (ja) 1983-09-13
JPH026237B2 JPH026237B2 (enEXAMPLES) 1990-02-08

Family

ID=12495941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57037381A Granted JPS58154286A (ja) 1982-03-10 1982-03-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS58154286A (enEXAMPLES)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936263U (ja) * 1982-08-30 1984-03-07 日本電気株式会社 半導体装置
JPS60201382A (ja) * 1984-03-26 1985-10-11 ロ−ム株式会社 発光表示装置
JPS60251654A (ja) * 1984-05-28 1985-12-12 Fujitsu Ltd 半導体装置の製造方法
JPS6169169A (ja) * 1984-09-13 1986-04-09 Agency Of Ind Science & Technol 半導体受光素子
FR2588701A1 (fr) * 1985-10-14 1987-04-17 Bouadma Noureddine Procede de realisation d'une structure integree laser-photodetecteur

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0285943U (enEXAMPLES) * 1988-12-22 1990-07-06
JPH03291452A (ja) * 1990-04-04 1991-12-20 Rinnai Corp 湯張り装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936263U (ja) * 1982-08-30 1984-03-07 日本電気株式会社 半導体装置
JPS60201382A (ja) * 1984-03-26 1985-10-11 ロ−ム株式会社 発光表示装置
JPS60251654A (ja) * 1984-05-28 1985-12-12 Fujitsu Ltd 半導体装置の製造方法
JPS6169169A (ja) * 1984-09-13 1986-04-09 Agency Of Ind Science & Technol 半導体受光素子
FR2588701A1 (fr) * 1985-10-14 1987-04-17 Bouadma Noureddine Procede de realisation d'une structure integree laser-photodetecteur
US4692207A (en) * 1985-10-14 1987-09-08 Noureddine Bouadma Process for the production of an integrated laser-photodetector structure

Also Published As

Publication number Publication date
JPH026237B2 (enEXAMPLES) 1990-02-08

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