JPS58154258A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58154258A
JPS58154258A JP57037621A JP3762182A JPS58154258A JP S58154258 A JPS58154258 A JP S58154258A JP 57037621 A JP57037621 A JP 57037621A JP 3762182 A JP3762182 A JP 3762182A JP S58154258 A JPS58154258 A JP S58154258A
Authority
JP
Japan
Prior art keywords
film
tantalum
tantalum oxide
insulating film
ta2o5
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57037621A
Other languages
English (en)
Japanese (ja)
Other versions
JPH043668B2 (cs
Inventor
Hitoshi Hasegawa
長谷川　斉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57037621A priority Critical patent/JPS58154258A/ja
Publication of JPS58154258A publication Critical patent/JPS58154258A/ja
Publication of JPH043668B2 publication Critical patent/JPH043668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP57037621A 1982-03-10 1982-03-10 半導体装置の製造方法 Granted JPS58154258A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57037621A JPS58154258A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57037621A JPS58154258A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58154258A true JPS58154258A (ja) 1983-09-13
JPH043668B2 JPH043668B2 (cs) 1992-01-23

Family

ID=12502696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57037621A Granted JPS58154258A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58154258A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037772A (en) * 1989-12-13 1991-08-06 Texas Instruments Incorporated Method for forming a polysilicon to polysilicon capacitor
US7115533B2 (en) 2001-12-18 2006-10-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037772A (en) * 1989-12-13 1991-08-06 Texas Instruments Incorporated Method for forming a polysilicon to polysilicon capacitor
US7115533B2 (en) 2001-12-18 2006-10-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPH043668B2 (cs) 1992-01-23

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