JPS58151393A - シリコン結晶の製造方法 - Google Patents

シリコン結晶の製造方法

Info

Publication number
JPS58151393A
JPS58151393A JP3109082A JP3109082A JPS58151393A JP S58151393 A JPS58151393 A JP S58151393A JP 3109082 A JP3109082 A JP 3109082A JP 3109082 A JP3109082 A JP 3109082A JP S58151393 A JPS58151393 A JP S58151393A
Authority
JP
Japan
Prior art keywords
crystal
silicon crystal
silicon
heat treatment
ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3109082A
Other languages
English (en)
Japanese (ja)
Other versions
JPH021119B2 (enExample
Inventor
Kunihiko Wada
邦彦 和田
Masamichi Yoshida
正道 吉田
Kazunori Imaoka
今岡　和典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3109082A priority Critical patent/JPS58151393A/ja
Publication of JPS58151393A publication Critical patent/JPS58151393A/ja
Publication of JPH021119B2 publication Critical patent/JPH021119B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3109082A 1982-02-26 1982-02-26 シリコン結晶の製造方法 Granted JPS58151393A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3109082A JPS58151393A (ja) 1982-02-26 1982-02-26 シリコン結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3109082A JPS58151393A (ja) 1982-02-26 1982-02-26 シリコン結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS58151393A true JPS58151393A (ja) 1983-09-08
JPH021119B2 JPH021119B2 (enExample) 1990-01-10

Family

ID=12321702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3109082A Granted JPS58151393A (ja) 1982-02-26 1982-02-26 シリコン結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS58151393A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242984A (ja) * 1985-04-19 1986-10-29 Shinetsu Sekiei Kk シリコン単結晶引上げ用ルツボ
JP2020520129A (ja) * 2017-05-10 2020-07-02 マクマホン, シェーン トマスMCMAHON, Shane Thomas 薄膜結晶化プロセス

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130897A (en) * 1979-03-30 1980-10-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Silicon single crystal
JPS5645894A (en) * 1979-09-25 1981-04-25 Nippon Telegr & Teleph Corp <Ntt> Reducing method for defect of silicon single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130897A (en) * 1979-03-30 1980-10-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Silicon single crystal
JPS5645894A (en) * 1979-09-25 1981-04-25 Nippon Telegr & Teleph Corp <Ntt> Reducing method for defect of silicon single crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242984A (ja) * 1985-04-19 1986-10-29 Shinetsu Sekiei Kk シリコン単結晶引上げ用ルツボ
JP2020520129A (ja) * 2017-05-10 2020-07-02 マクマホン, シェーン トマスMCMAHON, Shane Thomas 薄膜結晶化プロセス
US11810785B2 (en) 2017-05-10 2023-11-07 Lux Semiconductors Thin film crystallization process

Also Published As

Publication number Publication date
JPH021119B2 (enExample) 1990-01-10

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