JPS58151061A - タ−ンオン及びタ−ンオフできる半導体装置 - Google Patents
タ−ンオン及びタ−ンオフできる半導体装置Info
- Publication number
- JPS58151061A JPS58151061A JP1469983A JP1469983A JPS58151061A JP S58151061 A JPS58151061 A JP S58151061A JP 1469983 A JP1469983 A JP 1469983A JP 1469983 A JP1469983 A JP 1469983A JP S58151061 A JPS58151061 A JP S58151061A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- semiconductor
- conductor
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 66
- 239000000463 material Substances 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 5
- 210000000515 tooth Anatomy 0.000 claims 3
- 230000003213 activating effect Effects 0.000 claims 1
- 241000234282 Allium Species 0.000 description 5
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 241001609030 Brosme brosme Species 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000002902 bimodal effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34529082A | 1982-02-03 | 1982-02-03 | |
| US345290 | 1982-02-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58151061A true JPS58151061A (ja) | 1983-09-08 |
| JPH045274B2 JPH045274B2 (enrdf_load_stackoverflow) | 1992-01-30 |
Family
ID=23354402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1469983A Granted JPS58151061A (ja) | 1982-02-03 | 1983-02-02 | タ−ンオン及びタ−ンオフできる半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS58151061A (enrdf_load_stackoverflow) |
| CA (1) | CA1201214A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214470A (ja) * | 1985-03-20 | 1986-09-24 | Toshiba Corp | 半導体装置 |
| JPS624368A (ja) * | 1985-06-28 | 1987-01-10 | シ−メンス、アクチエンゲゼルシヤフト | サイリスタ |
| JPH01146366A (ja) * | 1987-12-03 | 1989-06-08 | Toshiba Corp | 導電変調型ｍｏｓｆｅｔ |
| JPH03194971A (ja) * | 1989-12-22 | 1991-08-26 | Meidensha Corp | 電力用半導体素子 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947715A (enrdf_load_stackoverflow) * | 1972-09-13 | 1974-05-09 | ||
| JPS55107265A (en) * | 1979-02-06 | 1980-08-16 | Siemens Ag | Thyristor |
| JPS5683067A (en) * | 1979-11-09 | 1981-07-07 | Siemens Ag | Thyristor |
-
1983
- 1983-01-28 CA CA000420450A patent/CA1201214A/en not_active Expired
- 1983-02-02 JP JP1469983A patent/JPS58151061A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947715A (enrdf_load_stackoverflow) * | 1972-09-13 | 1974-05-09 | ||
| JPS55107265A (en) * | 1979-02-06 | 1980-08-16 | Siemens Ag | Thyristor |
| JPS5683067A (en) * | 1979-11-09 | 1981-07-07 | Siemens Ag | Thyristor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214470A (ja) * | 1985-03-20 | 1986-09-24 | Toshiba Corp | 半導体装置 |
| JPS624368A (ja) * | 1985-06-28 | 1987-01-10 | シ−メンス、アクチエンゲゼルシヤフト | サイリスタ |
| US5093705A (en) * | 1985-06-28 | 1992-03-03 | Siemens Aktiengesellschaft | Thyristor with reduced central zone thickness |
| JPH01146366A (ja) * | 1987-12-03 | 1989-06-08 | Toshiba Corp | 導電変調型ｍｏｓｆｅｔ |
| JPH03194971A (ja) * | 1989-12-22 | 1991-08-26 | Meidensha Corp | 電力用半導体素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH045274B2 (enrdf_load_stackoverflow) | 1992-01-30 |
| CA1201214A (en) | 1986-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4450467A (en) | Gate turn-off thyristor with selective anode penetrating shorts | |
| JPH0221661A (ja) | 短寿命領域を含むｍｏｓゲート制御式ターンオフ・サイリスタ | |
| JPS62145777A (ja) | 絶縁ゲートトランジスタアレイ | |
| JP3183055B2 (ja) | 半導体双方向性スイッチおよびその駆動方法 | |
| US3896476A (en) | Semiconductor switching device | |
| US3996601A (en) | Shorting structure for multilayer semiconductor switching devices | |
| JP2946750B2 (ja) | 半導体装置 | |
| JPH043113B2 (enrdf_load_stackoverflow) | ||
| JP2653095B2 (ja) | 伝導度変調型ｍｏｓｆｅｔ | |
| JPH04312977A (ja) | 半導体装置 | |
| US4868625A (en) | Gate turn-off thyristor of multi-emitter type | |
| EP0065346A2 (en) | Semiconductor switching device | |
| JPS58151061A (ja) | タ−ンオン及びタ−ンオフできる半導体装置 | |
| CA1200327A (en) | Semiconductor device with improved turn-off capability | |
| US5111268A (en) | Semiconductor device with improved turn-off capability | |
| JPS6141146B2 (enrdf_load_stackoverflow) | ||
| US5998811A (en) | Trench emitter controlled thyristor | |
| JPS6373670A (ja) | 導電変調型ｍｏｓｆｅｔ | |
| JPH02291171A (ja) | ゲートターンオフサイリスタおよびその製造方法 | |
| JP3200328B2 (ja) | 複合半導体装置 | |
| JP4407172B2 (ja) | 横型絶縁ゲートバイポーラトランジスタ | |
| JP2829026B2 (ja) | 自己消弧型半導体素子 | |
| JP3629180B2 (ja) | 半導体素子 | |
| JPH07302898A (ja) | Ｍｏｓ半導体素子およびその制御方法 | |
| JP2797890B2 (ja) | 複合半導体装置 |