CA1201214A - Semiconductor device having turn-on and turn-off capabilities - Google Patents
Semiconductor device having turn-on and turn-off capabilitiesInfo
- Publication number
- CA1201214A CA1201214A CA000420450A CA420450A CA1201214A CA 1201214 A CA1201214 A CA 1201214A CA 000420450 A CA000420450 A CA 000420450A CA 420450 A CA420450 A CA 420450A CA 1201214 A CA1201214 A CA 1201214A
- Authority
- CA
- Canada
- Prior art keywords
- region
- semiconductor
- semiconductor device
- conductor
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 239000000463 material Substances 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 2
- 230000005669 field effect Effects 0.000 abstract 1
- 230000002902 bimodal effect Effects 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241001663154 Electron Species 0.000 description 1
- 244000187656 Eucalyptus cornuta Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000863814 Thyris Species 0.000 description 1
- -1 and vice-versa Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002353 field-effect transistor method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34529082A | 1982-02-03 | 1982-02-03 | |
| US345,290 | 1982-02-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1201214A true CA1201214A (en) | 1986-02-25 |
Family
ID=23354402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000420450A Expired CA1201214A (en) | 1982-02-03 | 1983-01-28 | Semiconductor device having turn-on and turn-off capabilities |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS58151061A (enrdf_load_stackoverflow) |
| CA (1) | CA1201214A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0680817B2 (ja) * | 1985-03-20 | 1994-10-12 | 株式会社東芝 | 半導体装置 |
| JPS624368A (ja) * | 1985-06-28 | 1987-01-10 | シ−メンス、アクチエンゲゼルシヤフト | サイリスタ |
| JP2703240B2 (ja) * | 1987-12-03 | 1998-01-26 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| JPH03194971A (ja) * | 1989-12-22 | 1991-08-26 | Meidensha Corp | 電力用半導体素子 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5113802B2 (enrdf_load_stackoverflow) * | 1972-09-13 | 1976-05-04 | ||
| DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
| DE2945324A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten |
-
1983
- 1983-01-28 CA CA000420450A patent/CA1201214A/en not_active Expired
- 1983-02-02 JP JP1469983A patent/JPS58151061A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58151061A (ja) | 1983-09-08 |
| JPH045274B2 (enrdf_load_stackoverflow) | 1992-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4816892A (en) | Semiconductor device having turn-on and turn-off capabilities | |
| Baliga et al. | The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device | |
| US5554862A (en) | Power semiconductor device | |
| US5396087A (en) | Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up | |
| JP7379327B2 (ja) | 半導体デバイス | |
| US4969027A (en) | Power bipolar transistor device with integral antisaturation diode | |
| US4646117A (en) | Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions | |
| US5198687A (en) | Base resistance controlled thyristor with single-polarity turn-on and turn-off control | |
| EP0341000A2 (en) | Gated turn-off semiconductor device | |
| JPH0212969A (ja) | スイッチオフ機構を有する電力用半導体部品 | |
| Nandakumar et al. | A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance | |
| JP3183055B2 (ja) | 半導体双方向性スイッチおよびその駆動方法 | |
| US5294816A (en) | Unit cell arrangement for emitter switched thyristor with base resistance control | |
| EP0118007B1 (en) | Electrical circuit comprising a hybrid power switching semiconductor device including an scr structure | |
| US5412228A (en) | Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same | |
| GB2305777A (en) | Base resistance controlled thyristor structure with high density layout for increased current capacity | |
| EP0014080A1 (en) | A three-terminal semiconductor switch device | |
| JPH02122671A (ja) | 制御可能なパワー半導体素子 | |
| US5621229A (en) | Semiconductor device and control method | |
| US5925900A (en) | Emitter-switched thyristor having a floating ohmic contact | |
| JPH041510B2 (enrdf_load_stackoverflow) | ||
| CA1201214A (en) | Semiconductor device having turn-on and turn-off capabilities | |
| EP0540017B1 (en) | MOS gate controlled thyristor | |
| EP0144654A2 (en) | Semiconductor device structure including a dielectrically-isolated insulated-gate transistor | |
| CA1200327A (en) | Semiconductor device with improved turn-off capability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |