JPS58151023A - 多層よりなるレジスト層の形成方法 - Google Patents

多層よりなるレジスト層の形成方法

Info

Publication number
JPS58151023A
JPS58151023A JP3178982A JP3178982A JPS58151023A JP S58151023 A JPS58151023 A JP S58151023A JP 3178982 A JP3178982 A JP 3178982A JP 3178982 A JP3178982 A JP 3178982A JP S58151023 A JPS58151023 A JP S58151023A
Authority
JP
Japan
Prior art keywords
layer
resist
resist layer
layers
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3178982A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6210036B2 (OSRAM
Inventor
Kazuyoshi Asai
浅井　和義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3178982A priority Critical patent/JPS58151023A/ja
Publication of JPS58151023A publication Critical patent/JPS58151023A/ja
Publication of JPS6210036B2 publication Critical patent/JPS6210036B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP3178982A 1982-03-02 1982-03-02 多層よりなるレジスト層の形成方法 Granted JPS58151023A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3178982A JPS58151023A (ja) 1982-03-02 1982-03-02 多層よりなるレジスト層の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3178982A JPS58151023A (ja) 1982-03-02 1982-03-02 多層よりなるレジスト層の形成方法

Publications (2)

Publication Number Publication Date
JPS58151023A true JPS58151023A (ja) 1983-09-08
JPS6210036B2 JPS6210036B2 (OSRAM) 1987-03-04

Family

ID=12340825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3178982A Granted JPS58151023A (ja) 1982-03-02 1982-03-02 多層よりなるレジスト層の形成方法

Country Status (1)

Country Link
JP (1) JPS58151023A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169910A (ja) * 1982-03-30 1983-10-06 Fujitsu Ltd 微細パタ−ン形成方法
JPS60111243A (ja) * 1983-11-21 1985-06-17 Nippon Telegr & Teleph Corp <Ntt> 有機高分子膜のエツチング方法
JPS6266630A (ja) * 1985-09-19 1987-03-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS62204525A (ja) * 1986-03-04 1987-09-09 Nec Corp 三層レジスト構造
JPS6368834A (ja) * 1986-09-10 1988-03-28 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物の厚膜形成方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169910A (ja) * 1982-03-30 1983-10-06 Fujitsu Ltd 微細パタ−ン形成方法
JPS60111243A (ja) * 1983-11-21 1985-06-17 Nippon Telegr & Teleph Corp <Ntt> 有機高分子膜のエツチング方法
JPS6266630A (ja) * 1985-09-19 1987-03-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS62204525A (ja) * 1986-03-04 1987-09-09 Nec Corp 三層レジスト構造
JPS6368834A (ja) * 1986-09-10 1988-03-28 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物の厚膜形成方法

Also Published As

Publication number Publication date
JPS6210036B2 (OSRAM) 1987-03-04

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