JPS58147126A - 熱酸化膜形成方法 - Google Patents

熱酸化膜形成方法

Info

Publication number
JPS58147126A
JPS58147126A JP57029960A JP2996082A JPS58147126A JP S58147126 A JPS58147126 A JP S58147126A JP 57029960 A JP57029960 A JP 57029960A JP 2996082 A JP2996082 A JP 2996082A JP S58147126 A JPS58147126 A JP S58147126A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
thermal oxide
heat treatment
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57029960A
Other languages
English (en)
Japanese (ja)
Other versions
JPH046090B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Takeuchi
寛 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57029960A priority Critical patent/JPS58147126A/ja
Publication of JPS58147126A publication Critical patent/JPS58147126A/ja
Publication of JPH046090B2 publication Critical patent/JPH046090B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP57029960A 1982-02-26 1982-02-26 熱酸化膜形成方法 Granted JPS58147126A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57029960A JPS58147126A (ja) 1982-02-26 1982-02-26 熱酸化膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57029960A JPS58147126A (ja) 1982-02-26 1982-02-26 熱酸化膜形成方法

Publications (2)

Publication Number Publication Date
JPS58147126A true JPS58147126A (ja) 1983-09-01
JPH046090B2 JPH046090B2 (enrdf_load_stackoverflow) 1992-02-04

Family

ID=12290539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57029960A Granted JPS58147126A (ja) 1982-02-26 1982-02-26 熱酸化膜形成方法

Country Status (1)

Country Link
JP (1) JPS58147126A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001029888A1 (de) * 1999-10-20 2001-04-26 Infineon Technologies Ag Verfahren zur reinigung einer monokristallinen silizium-halbleiterscheibe
WO2012156792A1 (en) 2011-05-16 2012-11-22 Toyota Jidosha Kabushiki Kaisha Process for producing semiconductor device and semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001029888A1 (de) * 1999-10-20 2001-04-26 Infineon Technologies Ag Verfahren zur reinigung einer monokristallinen silizium-halbleiterscheibe
WO2012156792A1 (en) 2011-05-16 2012-11-22 Toyota Jidosha Kabushiki Kaisha Process for producing semiconductor device and semiconductor device
US9508802B2 (en) 2011-05-16 2016-11-29 Toyota Jidosha Kabushiki Kaisha Gettering process for producing semiconductor device

Also Published As

Publication number Publication date
JPH046090B2 (enrdf_load_stackoverflow) 1992-02-04

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