JPS58137241A - Semiconductor device and preparation thereof - Google Patents
Semiconductor device and preparation thereofInfo
- Publication number
- JPS58137241A JPS58137241A JP57018753A JP1875382A JPS58137241A JP S58137241 A JPS58137241 A JP S58137241A JP 57018753 A JP57018753 A JP 57018753A JP 1875382 A JP1875382 A JP 1875382A JP S58137241 A JPS58137241 A JP S58137241A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- pair
- lead
- electrode
- sleeve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000011521 glass Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000008188 pellet Substances 0.000 description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置およびその製造方法に関し、ＩＩＩ
ＩＶＣ，ガラススリーブ体の両熾部から挿入された一対
の電極のリード１ｕｉｓ間Ｋ、半導体ダイオード素子を
挟着保持せしめるよ５に、スリーブ体と一対の電極とｔ
溶着した構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device and a method for manufacturing the same;
IVC, between the leads of a pair of electrodes inserted from both ends of the glass sleeve body, the sleeve body, the pair of electrodes and T
Regarding welded structures.
円筒形リードレスタイプの封止構造をもつ半導体ダイオ
ードとして第１図に示すものが知られ１いる。このダイ
オードは、ガラス製スリーブｌの上下端開口から１字形
のＦｅ−Ｎｉ−０ｕ′製電極５゜６ｖ夫々挿入し、この
際これら両電也の各リード１１１Ｂ（デエメット１ｍ１
ｌｉ）８聞にダイオードベレット２を挟着した状態で加
熱処理し、台電極５．６に対しスリーブ１ｖ濤着して一
体化するととｋよって得られる。この構造におい工、ベ
レット２の上面側のＡｇバンプ４が電１１５のリードＩ
ＩＷＩｎ固着され、またその裏面側はろう材（図示せず
）な介して電極６のリード１１１１ｇに固着される一方
、電＠５．６自体はスリーブ１の内周面及び上下各端面
に固定される。この円筒形リードレスダイオードは実Ｉ
Ｈｃｉｌ＆っては、プリント基板上で横に寝かした状態
で各ヘッダ部とプリント基板の導電パターンとの間に半
田ディツプ等の技術により半田を選択的に付着させ、両
者間を電気的及び機械的＜＊ａすることができる。この
プリント基板とダイオード電極との半田付けＫよる接着
強［Ｖよくするためと、組立て時のスリーブ１の保■ｖ
ｌｌｌる目的から、上記ヘッダＩＢ７１’リード＊＊Ｓ
より充分に拡大し、スリーブｌの端面とほぼ同一径に形
成することが要求される。A semiconductor diode shown in FIG. 1 is known as a semiconductor diode having a cylindrical leadless type sealing structure. For this diode, one-shaped Fe-Ni-0U' electrodes 5°6V are inserted from the upper and lower openings of the glass sleeve l, and each lead 111B (Demet 1m1) of each of these two electrodes is inserted.
li) Heat treatment is performed with the diode pellet 2 sandwiched between the 8 holes, and the sleeve 1v is attached to the base electrode 5.6 to integrate. In this structure, the Ag bump 4 on the top side of the pellet 2 is connected to the lead I of the electric wire 115.
IWIn is fixed, and its back side is fixed to the lead 1111g of the electrode 6 via a brazing material (not shown), while the electrode 5.6 itself is fixed to the inner peripheral surface and upper and lower end surfaces of the sleeve 1. Ru. This cylindrical leadless diode is a real I
With Hcil&, solder is selectively deposited between each header part and the conductive pattern of the printed circuit board by a technique such as solder dip while the board is lying horizontally on the printed circuit board, and electrical and mechanical connections are made between the two. <*a can be done. In order to improve the adhesion strength by soldering K between this printed circuit board and the diode electrode, and to maintain the sleeve 1 during assembly.
For the purpose of reading the above header IB71' read**S
It is required that the diameter of the sleeve 1 is substantially the same as that of the end surface of the sleeve 1.
かかるリードレスタイプの半導体ダイオードにおいては
、一対の電極は対称形に形成されるので、アノードまた
はカソードの極性表示が要末される。In such a leadless type semiconductor diode, since the pair of electrodes are formed symmetrically, it is not necessary to indicate the polarity of the anode or cathode.
この極性表示の方法とし℃は、ガラススリーブ体への印
刷技術によるマーク表示が考えられるが、マーキングの
ための工数がかかると共に、極性表示用マークの変色あ
るいは消えの劣化を招くことｋなる。さらに、マーク表
示では外形寸法の小型化に伴いマーキング作業が煩雑と
なるという欠点な有する。A conceivable method for indicating the polarity is to display the mark on the glass sleeve by printing technology, but this requires a lot of man-hours and causes the polarity display mark to discolor or disappear. Furthermore, mark display has the disadvantage that the marking work becomes complicated as the external dimensions become smaller.
従っ℃、本発明の目的は、極性表示を容易に実施し得る
リードレスタイプの半導体装置の構造および製造方法を
提供するととｋある。Accordingly, an object of the present invention is to provide a structure and manufacturing method for a leadless type semiconductor device that can easily display polarity.
本発明は、円筒形のガラススリーブ体と、それぞれが咳
ガラススリーブ体内に挿入されるリード層部とその゛リ
ードＩｍ！部の一方の端部に連続してリード層部より拡
大されたヘッダ部とから成る一対の電極と、半導体素子
とを真備し、一対の電極の各リード一部がスリーブ体の
両端開口からその内部に夫々挿入され、スリーブ体の内
ＩＩおいて一対の電極のリード一部の他方の端部間に半
導体素子な挟着保持せしめるようにガラススリーブを溶
着して成る半導体装置を対象とし１本発明に従見ば、−
万の電極のヘッダ部とガラススリーブ体との間の間隙が
、他方の電極のそれより大きくなるように形成するとと
ｋよって極性表示させたものである。The present invention includes a cylindrical glass sleeve body, a lead layer portion each inserted into the cough glass sleeve body, and a lead Im! A pair of electrodes consisting of a header part continuous to one end of the part and a header part enlarged from the lead layer part, and a semiconductor element are provided, and a part of each lead of the pair of electrodes extends from openings at both ends of the sleeve body. A semiconductor device in which a glass sleeve is welded so as to sandwich and hold a semiconductor element between the other ends of the leads of a pair of electrodes in the inner part of the sleeve body. According to the invention, -
By forming the gap between the header portion of one electrode and the glass sleeve body to be larger than that of the other electrode, the polarity is indicated.
本発明の裏法的な特徴に従えば、−万の電極のり−ド纏
部の一部は、そのリード１ｌｌｌｋ溶着されるべきガラ
ススリーブ体から露出するように、リードｓｉＩの長さ
に関して円筒形のガラススリーブの長さが積極的に短か
くなるように選択される。According to an advantageous feature of the invention, a portion of the electrode glue is cylindrical with respect to the length of the lead siI, so that a portion of the electrode glue is exposed from the glass sleeve body to which the lead 1lllk is to be welded. The length of the glass sleeve is selected to be aggressively short.
厳密には、一対の電極の一対のリードａｍの長さのＩＩ
ＩＥＩ（２１１）に、そのリード層部関に挟着保持され
る半導体ダイオードなどの半導体素子（ベレット）の厚
さｔ、４加尋た長き（２ｔｌ＋ｔ、）よりもガラススリ
ーブの長さｔ、は短かく選択される。Strictly speaking, the length of a pair of leads am of a pair of electrodes is II
The length t of the glass sleeve is greater than the thickness t of a semiconductor element (bellet) such as a semiconductor diode held between the lead layer portion of the IEI (211), and the length 4 plus (2tl+t). Selected short.
そし℃、ガラススリーブ、一対の電［＆および半導体素
子は、ガラススリーブを溶着させるための熱処理工程に
おいて、垂直方向１１１意された治臭の中にセットされ
溶着される。−直方向において熱処理される過程におい
て、ガラススリーブはその重力によって、垂直方向の下
側の電極のヘッダ部ｋｉｌした状態で溶着される一方、
上側の電極のヘッダ部とガラススリーブの上側開口端と
の関に間隙を形成すやことができ、この上側の間隙部を
極性表示用とじ℃積極的に利用するものである。Then, in a heat treatment process for welding the glass sleeve, the glass sleeve, the pair of electrodes and the semiconductor element are set in a vertically oriented chamber and welded. - In the process of heat treatment in the vertical direction, the glass sleeve is welded by its gravity with the header part of the lower electrode in the vertical direction in a kilned state;
A gap can be easily formed between the header portion of the upper electrode and the upper opening end of the glass sleeve, and this upper gap is actively utilized for polarity display binding.
以下、本発明について一面な参照にして説明する。第２
図は本発−による一実施例を示す構造図で、第１図に示
した構造と同一する部分は同一符号が付されている。以
下に示す実施例では一つのＰＨ１合をもつ半導体ダイオ
ードの場合について述べられる。The present invention will now be described with general reference. Second
The figure is a structural diagram showing an embodiment according to the present invention, and the same parts as the structure shown in FIG. 1 are given the same reference numerals. In the example shown below, the case of a semiconductor diode with one PH1 coupling will be described.
第２図に″Ｃ，円筒形のガラススリーブ体１ｏは例えば
、８ｉ０．−ＰｂＯ−に、０系のガラスから成り、この
スリーブ体に使用されるガラスは約６５０ ’Ｃ以下の
軟化点をもつ。このガラス材料の一例としてコーニング
社から発売されている＄８８７０（商品名）がある。電
極５．６は、ジェメット層とし℃知られる０ｕｌｌ榎Ｆ
ｅ−Ｎｉから成る。電極５．６のそれぞれは、ガラスス
リーブの内局面に挿入され得る径をもつリード１１８８
と、その−万の終端部に連続し工形成されたガラススリ
ーブの外局径とはぼ同一径をもつヘッダ部７とを有し、
その断面形状が１字形となっている。半導体素子Ｓ（ベ
レ、ット部）２はシリコン半導体基板３から成り、その
シリコン基板３内忙拡散技術又はイオン打込み技術によ
っＣＰＮ１１合が形成されており、これｋよって整流作
用を得ている。シリコン基板上には銀から成るバンプ電
＠４が形成され、それがＰＮｇ合の明方の電１ｉｔｌ−
成している。第３ｗＪは、１１１２図に示した半導体装
置のベレット２の近傍を拡大して示した新ｌ１ｌｉ図で
ある。第３図に示すように、リード纏ｌＩ８の表面には
鋼（Ｏｕ）被ｌ［１２が形成され、このＯｕｇ膜ｖ＃１
化処理するととｋよって亜麿化鋼被属１３が形成されて
いる。ベレット２は、シリコン基４［３の中に形成され
たＰＮ＠合を含み、その表面上に形成されたパッ、シベ
ーシ曹ン用絶縁属９と、アノード電極用のムｇバンプ４
とを真備している。ベレット３の裏面は人ｇなどのろう
材１．１ｔＣよってリードａ！１部８Ｋｉｔ着されてい
る。ベレットが載置されるリード＊ｇｓの切断面には若
干の銅被覆が部分的に存在しても、ベレットのり−“ド
ＩＩＮに対する接着は可能である。In Fig. 2, the cylindrical glass sleeve body 1o is made of, for example, 8i0.-PbO-, 0 series glass, and the glass used for this sleeve body has a softening point of about 650'C or less. An example of this glass material is $8870 (trade name) sold by Corning.The electrodes 5 and 6 are made of Oull Enoki F, known as a gemmet layer.
Consists of e-Ni. Each of the electrodes 5.6 has a lead 1188 with a diameter that can be inserted into the inner surface of the glass sleeve.
and a header portion 7 having approximately the same diameter as the outer diameter of the glass sleeve formed continuously at the terminal end of the head,
Its cross-sectional shape is a single character. The semiconductor element S (bottom part) 2 is made of a silicon semiconductor substrate 3, and a CPN 11 is formed in the silicon substrate 3 by a diffusion technique or an ion implantation technique, thereby obtaining a rectifying effect. . A bump electrode @4 made of silver is formed on the silicon substrate, and it is a bright electrode 1itl- of PNg.
has been completed. The third wJ is a new l1li diagram showing an enlarged view of the vicinity of the pellet 2 of the semiconductor device shown in FIG. 1112. As shown in FIG. 3, a steel (Ou) coating l[12 is formed on the surface of the lead wrapping lI8, and this Oug film v#1
As a result of the chemical treatment, a submarinated steel metallization 13 is formed. The pellet 2 includes a PN@container formed in a silicon base 4[3, an insulating metal 9 for pads and silicone formed on the surface thereof, and a mug bump 4 for an anode electrode.
We are fully equipped with the following. The back side of the pellet 3 is lead a! due to the brazing material 1.1tC such as g One copy has 8 kits. Even if some copper coating is partially present on the cut surface of the lead *gs on which the pellet is placed, adhesion to the pellet glue--IIN is possible.
かかる構造において、本発明に従って、ガラススリーブ
１０の上側端部１４と電極５のヘッダ部７との間には、
リードｉＩ部８ｔ−露出させるように間［１が形成され
ている。この間隙ｔｇ□は、電１
極６のヘッダ部７とガラススリーブ１０の下側端部１５
との間の間隙ｔｇｓ Ｃ本実施例ではｔｇ１＝０である
）より大きくなるように形成し、これによりて、視覚的
に明方の間隙ｔ ｇ １が他方（ｔｇりより大と判定で
きるようｋなして、間Ｓｔｇ１の大きい方の電極５のヘ
ッダＩ！？’ｔ’、アノード１也として極性表示せしめ
たものである。In such a structure, according to the invention, between the upper end 14 of the glass sleeve 10 and the header part 7 of the electrode 5,
A space [1] is formed to expose the lead iI portion 8t. This gap tg□ is between the header part 7 of the electrode 6 and the lower end 15 of the glass sleeve 10.
The gap tgs C between the other side (tg1=0 in this embodiment) is formed so that it can be visually determined that the gap tg1 on the bright side is larger than the other side (tg1=0). The polarity is indicated as k, header I!?'t' of the electrode 5 with the larger distance Stg1, and anode 1.
かかる極性表示のための間＊１ｇ□は製造工程中に極め
て容易に形成し、得る。以下に、本発明に従５半導体装
置の製造方法について説明する。Such polarity markings *1g□ are very easily formed and obtained during the manufacturing process. Below, a method for manufacturing a semiconductor device according to the present invention will be described.
（１）、まず、本発明に従う組立方法を採用するにあた
りて、ガラススリーブｌＯの長さが選択される。(1) First, in adopting the assembly method according to the present invention, the length of the glass sleeve IO is selected.
第２図に示すように、ガラススリーブｌＯの長さｔ、は
、一対の電極５．６のリード１１部８の長さ、４１に、
ガラススリーブ内に挿入されるべき部分の長さの總和（
２１，）＜、半導体素子２の厚さｔ。As shown in FIG. 2, the length t of the glass sleeve lO is equal to the length 41 of the lead 11 portion 8 of the pair of electrodes 5.6.
The total length of the part to be inserted into the glass sleeve (
21,)<, thickness t of semiconductor element 2.
ｖ２１ＩＩｌｌえた全体の長さく２ｔ７＋ｔ、）より短
かくなるように選択される。v21IIll is selected to be shorter than the total length (2t7+t,).
（２）、次に、第４図に示すよ５ＩＩＣ１上記したよう
な寸法を持つ下側電極６と、ガラススリーブ１０と、半
導体素子２とを、順次、カーボンから成る整列治具１６
の縦孔１７の中にセットする。孔１７は一厘方向に伸び
、この中に、ガラススリーブ１０が挿入され得る大きさ
の径をもつ。半導体ベレッ）２ｖスリーブｌＯ内にセッ
トする場合、半導体ペレット２は、リード纏Ｓｇの切断
面に対し、ベレットの裏面電極ｌｌ側または銀バンク電
極４偶の任意の備が位置するよ５Ｖｃ載置することがで
き、ガラススリーブ内へのベレットの挿入に際しては、
ベレットの表裏を気にすることなく載置することができ
る・
整列用油臭１６の孔部１７に、下貴電′極６．ｌラスス
リーブ１０および半導体ベレット２が順次セットされた
後、上側電極５ｖセツトする前Ｋ、治具１６に対して、
水平方向に揺動（往復動）Ｈが与えられる。この水平揺
動ＨＫより、側部が接するように立りているベレットや
、バンプ電極４が下向きｋなっているベレットは、銀バ
ンプ電極４が上向きになるように整えられる。(2) Next, as shown in FIG. 4, the lower electrode 6 having the above-mentioned dimensions, the glass sleeve 10, and the semiconductor element 2 are sequentially assembled using an alignment jig 16 made of carbon.
into the vertical hole 17. The hole 17 extends in one direction and has a diameter large enough to allow the glass sleeve 10 to be inserted therein. Semiconductor pellet) When setting in the 2v sleeve 1O, the semiconductor pellet 2 is placed at 5V so that the back electrode 11 side of the pellet or any part of the silver bank electrode 4 is located against the cut surface of the lead wrapper Sg. When inserting the pellet into the glass sleeve,
The pellet can be placed without worrying about the front and back sides of the pellet. The lower noble electrode 6. After the lath sleeve 10 and the semiconductor pellet 2 are set in sequence, before setting the upper electrode 5V, to the jig 16,
A swinging motion (reciprocating motion) H is applied in the horizontal direction. Due to this horizontal swing HK, the bullets that stand so that their sides touch or the bullets that have the bump electrodes 4 facing downward are arranged so that the silver bump electrodes 4 are facing upward.
（３）、整列治具１６のすべての孔部ＩＨＣセットされ
たベレット２は、その銀バンプ電Ｉｉ４が上向きｋなる
ように、整列された後、第５図に示すように、上側電極
５が治具１６忙セツトされ、ガラススリーブ１０ｖ一対
の電極５．６のリード線部に溶着させるために、整列治
具全体を加熱炉に入れることｋより工、熱処理が行なわ
れる。この熱処理条件は種々選択できるが、例えは、Ｎ
、または空気中で約６５０℃の温度で、数１０秒間であ
ってよい。(3) After all the holes IHC-set pellets 2 of the alignment jig 16 are aligned so that the silver bump electrodes Ii4 face upward, the upper electrodes 5 are aligned as shown in FIG. The jig 16 is set up, and the entire alignment jig is put into a heating furnace for processing and heat treatment in order to weld it to the lead wire portions of the pair of electrodes 5.6 of the glass sleeve 10v. Various conditions can be selected for this heat treatment, but for example, N
, or in air at a temperature of about 650° C. for several tens of seconds.
熱処理後、全体ｖｉｍｉｉに冷却する◎これによってリ
ード１１部８とスリーブｌＯとの間、およびベレット２
と一対のリード１１部８との間が・相互に固着される。After heat treatment, the entire body is cooled down to vimii ◎This allows the space between the lead 11 part 8 and the sleeve lO, and the bullet 2
and the pair of leads 11 portions 8 are fixed to each other.
この時、上述したようにガラススリーブ１０の長さｔ、
は、一対のリード一部の長さ２ｔｌとベレットの厚さｔ
、との総和（Ｚｔｊ＋ｔｐ ）より短かくされているか
ら、第２ＥＩＩＣ示すようｋ、上側電極５とガラススリ
ーブの上瑞部１４との間に間隙ｔｇ１ｔ−自動的に形成
することができる。この間隙ｔ ｇ ｓが存在する側は
、アノード電極を表わすととｋなる。At this time, as mentioned above, the length t of the glass sleeve 10,
is the length of the pair of leads, 2tl, and the thickness of the beret, t.
, the gap tg1t- can be automatically formed between the upper electrode 5 and the upper groove 14 of the glass sleeve, as shown in the second EIIC. The side where this gap t g s exists is k, which represents the anode electrode.
上記組立例において、治具内へのベレットのセットは、
予め銀バンプ電極が上向會になるようにセットすれは、
セット後の水平揺動を省略することができる。また、任
意の位置にペレッ）Ｖ挿入する場合、水平揺動を必要と
するが、この水平揺動の変りｋ、水平に円運動を与えて
も、銀バンプの上向１１１列を可Ｉ＠にする。In the above assembly example, setting the pellet into the jig is as follows:
If you set the silver bump electrode in the upward direction in advance,
Horizontal swinging after setting can be omitted. In addition, when inserting a pellet at an arbitrary position, horizontal rocking is required, but even if a circular motion is applied horizontally, it is possible to move the silver bumps upward in 111 rows. Make it.
以上のように１本発ｆＪ＃／ｃ従見ば、ガラススリーブ
ｖ４１１かく選択するととによって、ＩＩ吟て簡単に極
性表示用の間Ｉｌｔ形成することができる。As described above, by selecting the glass sleeve V411 in this manner, it is possible to easily form a polarity display space Ilt.
第６図は本発明の他の実施例を示す構造図である。この
例では、各電極５．６のヘッダ部７の内側面に同心状の
段部１８ｔｌＲけている点が上述した実施例と相違して
いる。この段部１８のサイズ（面積）は、スリーブｌＯ
の端面、４９に、下側端面１５との接触面積がガラスス
リーブの端面面積に比べて小さくなるように設定され℃
いる。スリーブ１０の端面１５とヘッダ部との接触面積
を小さくすれば、溶着のための熱処理時にガラススリー
ブにクラックが発生する度合を少なくできる点で有利で
ある。そして、この段部１８のために１下側電極（カソ
ード電極）６のヘッダ部７の最大径をもつ部分とガラス
スリーブｌＯとの関に間隙ｔｇ！ｖ生じるが、この間隙
ｔ ｇ ｓより大きくなるように、上側電極（アノード
電極）５のヘッダ部（最大径をもつ部分）７とガラスス
リーブ１ｏとの間に間隙ｔ ｇ １ ｆ形成せしめてい
る。すなわち、ｔｇｔ ＞ ｔｘｔの関係に形成すると
とｋよって、より大きい間隙ｔ ｇ ｔの存在する側の
電極５を７ノード電極として判定することができる。FIG. 6 is a structural diagram showing another embodiment of the present invention. This example differs from the above embodiment in that a concentric stepped portion 18tlR is provided on the inner surface of the header portion 7 of each electrode 5.6. The size (area) of this stepped portion 18 is
The end surface 49 is set such that the contact area with the lower end surface 15 is smaller than the end surface area of the glass sleeve.
There is. Reducing the contact area between the end surface 15 of the sleeve 10 and the header portion is advantageous in that the degree to which cracks occur in the glass sleeve during heat treatment for welding can be reduced. Because of this stepped portion 18, there is a gap tg between the largest diameter portion of the header portion 7 of the lower electrode (cathode electrode) 6 and the glass sleeve lO! However, a gap t g 1 f is formed between the header portion (portion with the largest diameter) 7 of the upper electrode (anode electrode) 5 and the glass sleeve 1o so that it is larger than this gap t g s. . That is, if the electrodes 5 are formed in a relationship such that tgt > txt, then the electrode 5 on the side where the larger gap t g t exists can be determined as a 7-node electrode.
以上、本発明を実施例についてａ明°したが、本発明の
技術思想に基づいて災に変形が可能である。Although the present invention has been described above with reference to embodiments, various modifications can be made based on the technical idea of the present invention.
例えば、一対の電極５．６のヘッダ部の形状は円形状以
外に六角形等の他の形状を採用し得る。本願発明に従え
ば、轡にこれら一対の電極の形状を同−形状忙できるの
で、アノード電極とカソード電極との使い分はを行なう
必要がなく、従って、組立作業上極めて工場が簡略化さ
れる。For example, the header portions of the pair of electrodes 5.6 may have a shape other than a circle, such as a hexagon. According to the present invention, since the shapes of the pair of electrodes can be made to be the same, there is no need to differentiate between the anode electrode and the cathode electrode, and therefore the factory is extremely simplified in terms of assembly work. .
また、上述した例では、ＰＮ接合の整流用ダイオードに
つい工説明したが、この他、バリキャップダイオード、
ツェナーダイオード等、極性表示を必要とする半導体装
置に適用することができる。In addition, in the example described above, the PN junction rectifier diode was explained, but in addition, varicap diodes,
It can be applied to semiconductor devices that require polarity display, such as Zener diodes.
纂１図は従来の円筒形のリードレスダイブの半導体装置
を示す断面図。第２図は本発明の一実施例に従う円筒形
のリードレスタイプの半導体ｉｉｔを示す断面図。第３
図は第２図に示した半導体装置ｖｌＩ分的に拡大して示
した断面図。第４図および第５図は整列治具内に本発明
の半導体装置の各部品を組立のためにセットした状１ｌ
ｔ−示す断面図。
および纂６図は本発明の他の実施例を示す断面図。
１、ｌＯ・・・円筒形ガラススリーブ、２・・・半導体
素子（ベレット）、５．６・・・電極、７・・・電極５
゜６のへッーダ部、８・・・電極５．６のリード層部、
１６・・・整列治具。Figure 1 is a sectional view showing a conventional cylindrical leadless dive semiconductor device. FIG. 2 is a sectional view showing a cylindrical leadless type semiconductor IIT according to an embodiment of the present invention. Third
The figure is a cross-sectional view enlarged in a portion of the semiconductor device vlI shown in FIG. 2. 4 and 5 show a state in which each component of the semiconductor device of the present invention is set in an alignment jig for assembly.
t-A cross-sectional view shown. FIG. 6 is a sectional view showing another embodiment of the present invention. 1, lO... Cylindrical glass sleeve, 2... Semiconductor element (bellet), 5.6... Electrode, 7... Electrode 5
Header part of ゜6, 8... Lead layer part of electrode 5.6,
16... Alignment jig.
Claims (1)
らなる一対の電極の各リード＊Ｓがスリーブ体の両１ｍ
Ｍ口からその内１１にそれぞれ挿入され、前記スリーブ
体の内部におい℃前記一対の電極の各リードＩＩＷ聞に
半導体素子な挟着保持した状１１に前記スリーブ体が前
記一対の電極１／ｃ１１Ｉ１着されて成る半導体装置Ｉ
ＩＣおいて、前記一対の電極の明方の電極のヘッダ部と
前記スリーブの明方の端部との間に！／Ｉｋ成された明
方の間隙は、他方の電極のヘッダ部と前記スリーブの他
方の端部との間に形成された他方の間隙より太き（され
、これによって極性表示をなすととｖ４Ｉ黴としだ拳導
体装置。 ２、前記他方の間隙は実質的に零であるととｖ４１像と
す番臀許霧求の範ｍ第１碑記載の半導体装置。 ３、ある厚碍を持つ半導体素子と、それぞれがリードｗ
ｉｇとこれより拡大されたヘッダ部とを有する一対の電
極と、前記一対の電極のリード暖部の長さに前記半導体
素子の厚さを加えた寸法より短い長さｔもつガラススリ
ーブとを用意し、垂直方向において前記一対の電極の各
リードａＳを前記ガラススリーブ体の両端開口からその
内部にそれぞれ挿入し、かつ、前記スリーブ体の内１１
において前記一対の電極の各リード線部間に前記半導体
素子を挾むように１前記ガラススリーブ、一対の電極お
よび半導体素子を整列せしめ、この状態で熱処理してガ
ラススリーブと一対の電極とを溶着せしめることｖ４１
黴とする半導体装置の製造方法。[Claims] 1. Each lead *S of a pair of electrodes consisting of a 1J-toilet and a header part enlarged from this is connected to the sleeve body by 1m on both sides.
The sleeve body is inserted into each of the electrodes 11 from the M opening, and the semiconductor element is held between each lead IIW of the pair of electrodes inside the sleeve body. Semiconductor device I made up of
In the IC, between the header part of the bright electrode of the pair of electrodes and the bright end of the sleeve! /Ik is wider than the other gap formed between the header portion of the other electrode and the other end of the sleeve, thereby indicating polarity. 2. The semiconductor device described in the first inscription of the V41 image, in which the gap between the other side is substantially zero. 3. The semiconductor device having a certain thickness. element and each lead lol
A pair of electrodes having a header portion enlarged from the header portion, and a glass sleeve having a length t shorter than the sum of the length of the warm lead portion of the pair of electrodes and the thickness of the semiconductor element are prepared. Each lead aS of the pair of electrodes is vertically inserted into the inside of the glass sleeve body from both end openings, and the inside 11 of the sleeve body
In step 1, the glass sleeve, the pair of electrodes, and the semiconductor element are aligned so that the semiconductor element is sandwiched between each lead wire portion of the pair of electrodes, and in this state, heat treatment is performed to weld the glass sleeve and the pair of electrodes. v41
A method for manufacturing semiconductor devices using mold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57018753A JPS58137241A (en) | 1982-02-10 | 1982-02-10 | Semiconductor device and preparation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57018753A JPS58137241A (en) | 1982-02-10 | 1982-02-10 | Semiconductor device and preparation thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58137241A true JPS58137241A (en) | 1983-08-15 |
Family
ID=11980405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57018753A Pending JPS58137241A (en) | 1982-02-10 | 1982-02-10 | Semiconductor device and preparation thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137241A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063953U (en) * | 1983-10-05 | 1985-05-07 | 日本インター株式会社 | semiconductor equipment |
-
1982
- 1982-02-10 JP JP57018753A patent/JPS58137241A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063953U (en) * | 1983-10-05 | 1985-05-07 | 日本インター株式会社 | semiconductor equipment |
| JPS6336696Y2 (en) * | 1983-10-05 | 1988-09-28 |
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