JPS58131773A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58131773A
JPS58131773A JP57013260A JP1326082A JPS58131773A JP S58131773 A JPS58131773 A JP S58131773A JP 57013260 A JP57013260 A JP 57013260A JP 1326082 A JP1326082 A JP 1326082A JP S58131773 A JPS58131773 A JP S58131773A
Authority
JP
Japan
Prior art keywords
film
drain
source
substrate
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57013260A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05870B2 (enrdf_load_stackoverflow
Inventor
Eiji Takeda
英次 武田
Hitoshi Kume
久米　均
Yoshinobu Nakagome
儀延 中込
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57013260A priority Critical patent/JPS58131773A/ja
Publication of JPS58131773A publication Critical patent/JPS58131773A/ja
Publication of JPH05870B2 publication Critical patent/JPH05870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Bipolar Transistors (AREA)
JP57013260A 1982-02-01 1982-02-01 半導体装置の製造方法 Granted JPS58131773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57013260A JPS58131773A (ja) 1982-02-01 1982-02-01 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57013260A JPS58131773A (ja) 1982-02-01 1982-02-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58131773A true JPS58131773A (ja) 1983-08-05
JPH05870B2 JPH05870B2 (enrdf_load_stackoverflow) 1993-01-06

Family

ID=11828244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57013260A Granted JPS58131773A (ja) 1982-02-01 1982-02-01 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58131773A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61259574A (ja) * 1985-04-12 1986-11-17 ゼネラル・エレクトリツク・カンパニイ ホツト電子の効果を低減する延長ドレイン構造
JP2008235407A (ja) * 2007-03-19 2008-10-02 Fujitsu Ltd 半導体装置及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315773A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Mis type semiconductor device and its production
JPS5318982A (en) * 1976-08-05 1978-02-21 Nec Corp Insulated gate type semiconductor device
JPS5530873A (en) * 1978-08-28 1980-03-04 Fujitsu Ltd High withstand field-effect transistor of mis type

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315773A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Mis type semiconductor device and its production
JPS5318982A (en) * 1976-08-05 1978-02-21 Nec Corp Insulated gate type semiconductor device
JPS5530873A (en) * 1978-08-28 1980-03-04 Fujitsu Ltd High withstand field-effect transistor of mis type

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61259574A (ja) * 1985-04-12 1986-11-17 ゼネラル・エレクトリツク・カンパニイ ホツト電子の効果を低減する延長ドレイン構造
JP2008235407A (ja) * 2007-03-19 2008-10-02 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH05870B2 (enrdf_load_stackoverflow) 1993-01-06

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