JPS58128728A - 半導体気相成長装置 - Google Patents
半導体気相成長装置Info
- Publication number
- JPS58128728A JPS58128728A JP57011997A JP1199782A JPS58128728A JP S58128728 A JPS58128728 A JP S58128728A JP 57011997 A JP57011997 A JP 57011997A JP 1199782 A JP1199782 A JP 1199782A JP S58128728 A JPS58128728 A JP S58128728A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- time
- heating
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 230000008569 process Effects 0.000 claims abstract description 168
- 238000000034 method Methods 0.000 claims abstract description 112
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 238000004364 calculation method Methods 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 61
- 238000001947 vapour-phase growth Methods 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 32
- 238000003860 storage Methods 0.000 claims description 18
- 230000006698 induction Effects 0.000 claims description 17
- 230000004048 modification Effects 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 3
- 238000013500 data storage Methods 0.000 claims 1
- BFMYDTVEBKDAKJ-UHFFFAOYSA-L disodium;(2',7'-dibromo-3',6'-dioxido-3-oxospiro[2-benzofuran-1,9'-xanthene]-4'-yl)mercury;hydrate Chemical group O.[Na+].[Na+].O1C(=O)C2=CC=CC=C2C21C1=CC(Br)=C([O-])C([Hg])=C1OC1=C2C=C(Br)C([O-])=C1 BFMYDTVEBKDAKJ-UHFFFAOYSA-L 0.000 claims 1
- 238000004904 shortening Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 16
- 238000012937 correction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 23
- 239000012071 phase Substances 0.000 description 22
- 230000006870 function Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 13
- 230000005856 abnormality Effects 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000004886 process control Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 102100031584 Cell division cycle-associated 7-like protein Human genes 0.000 description 2
- 101000777638 Homo sapiens Cell division cycle-associated 7-like protein Proteins 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 101100071444 Arabidopsis thaliana HSP90-5 gene Proteins 0.000 description 1
- 101150018201 C11L gene Proteins 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 101000741289 Homo sapiens Calreticulin-3 Proteins 0.000 description 1
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 1
- 101000969621 Homo sapiens Monocarboxylate transporter 12 Proteins 0.000 description 1
- 102100021444 Monocarboxylate transporter 12 Human genes 0.000 description 1
- 101000941926 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) Carboxypeptidase Y inhibitor Proteins 0.000 description 1
- 101100064373 Swinepox virus (strain Kasza) DUT gene Proteins 0.000 description 1
- 229920000535 Tan II Polymers 0.000 description 1
- 101100524645 Toxoplasma gondii ROM5 gene Proteins 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- PWPJGUXAGUPAHP-UHFFFAOYSA-N lufenuron Chemical compound C1=C(Cl)C(OC(F)(F)C(C(F)(F)F)F)=CC(Cl)=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F PWPJGUXAGUPAHP-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004092 self-diagnosis Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57011997A JPS58128728A (ja) | 1982-01-28 | 1982-01-28 | 半導体気相成長装置 |
| US06/461,231 US4430959A (en) | 1982-01-28 | 1983-01-26 | Semiconductor vapor phase growing apparatus |
| DE8383100728T DE3376432D1 (en) | 1982-01-28 | 1983-01-27 | Semiconductor vapor phase growing apparatus |
| EP19830100728 EP0085397B1 (en) | 1982-01-28 | 1983-01-27 | Semiconductor vapor phase growing apparatus |
| KR1019830000341A KR860000251B1 (ko) | 1982-01-28 | 1983-01-28 | 반도체 기상 성장장치(半導體氣相成長裝置) |
| US07/204,364 USRE33326E (en) | 1982-01-28 | 1988-06-09 | Semiconductor vapor phase growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57011997A JPS58128728A (ja) | 1982-01-28 | 1982-01-28 | 半導体気相成長装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25355687A Division JPS63126216A (ja) | 1987-10-09 | 1987-10-09 | 半導体気相成長装置 |
| JP25355587A Division JPS63126215A (ja) | 1987-10-09 | 1987-10-09 | 半導体気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58128728A true JPS58128728A (ja) | 1983-08-01 |
| JPS6328495B2 JPS6328495B2 (OSRAM) | 1988-06-08 |
Family
ID=11793220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57011997A Granted JPS58128728A (ja) | 1982-01-28 | 1982-01-28 | 半導体気相成長装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US4430959A (OSRAM) |
| JP (1) | JPS58128728A (OSRAM) |
| KR (1) | KR860000251B1 (OSRAM) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62130515A (ja) * | 1985-12-02 | 1987-06-12 | Toshiba Mach Co Ltd | 半導体製造装置 |
| JPS62130516A (ja) * | 1985-12-02 | 1987-06-12 | Toshiba Mach Co Ltd | 半導体製造装置 |
| JPS63119233U (OSRAM) * | 1987-01-28 | 1988-08-02 | ||
| JP2002525842A (ja) * | 1998-09-14 | 2002-08-13 | アプライド マテリアルズ インコーポレイテッド | プログラム可能な処理パラメータを備えたウエハ処理リアクタシステム及びその操作方法 |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592318A (ja) * | 1982-06-28 | 1984-01-07 | Toshiba Mach Co Ltd | 半導体気相成長装置 |
| JPS6097622A (ja) * | 1983-11-01 | 1985-05-31 | Toshiba Mach Co Ltd | エピタキシヤル装置 |
| JPS59166238A (ja) * | 1983-03-10 | 1984-09-19 | Toshiba Corp | 薄膜形成装置 |
| US5244500A (en) * | 1983-10-05 | 1993-09-14 | Toshiba Kikai Kabushiki Kaisha | Process control system of semiconductor vapor phase growth apparatus |
| US4772485A (en) * | 1983-10-05 | 1988-09-20 | Toshiba Kikai Kabushiki Kaisha | Process control system of semiconductor vapor phase growing apparatus |
| US4632058A (en) * | 1984-02-27 | 1986-12-30 | Gemini Research, Inc. | Apparatus for uniform chemical vapor deposition |
| US4974543A (en) * | 1986-02-28 | 1990-12-04 | Xerox Corporation | Apparatus for amorphous silicon film |
| US4736304A (en) * | 1986-04-07 | 1988-04-05 | Energy Conversion Devices, Inc. | Method and apparatus for operating one or more deposition systems |
| US4807561A (en) * | 1986-05-19 | 1989-02-28 | Toshiba Machine Co., Ltd. | Semiconductor vapor phase growth apparatus |
| CA1279916C (en) * | 1987-02-12 | 1991-02-05 | Guy David | Gas cylinder monitor and control system |
| FR2618799B1 (fr) * | 1987-07-27 | 1989-12-29 | Inst Nat Rech Chimique | Reacteur de depot en phase vapeur |
| KR970006206B1 (ko) * | 1988-02-10 | 1997-04-24 | 도오교오 에레구토론 가부시끼가이샤 | 자동 도포 시스템 |
| JP2928930B2 (ja) * | 1989-12-06 | 1999-08-03 | セイコーインスツルメンツ株式会社 | 不純物ドーピング装置 |
| US5180432A (en) * | 1990-01-08 | 1993-01-19 | Lsi Logic Corporation | Apparatus for conducting a refractory metal deposition process |
| US5070815A (en) * | 1990-03-13 | 1991-12-10 | Fujitsu Limited | MOCVD device for growing a semiconductor layer by the metal-organic chemical vapor deposition process |
| US5220517A (en) * | 1990-08-31 | 1993-06-15 | Sci Systems, Inc. | Process gas distribution system and method with supervisory control |
| EP0505877A2 (en) * | 1991-03-27 | 1992-09-30 | Seiko Instruments Inc. | Impurity doping method with adsorbed diffusion source |
| JPH0666593U (ja) * | 1993-03-02 | 1994-09-20 | 積水樹脂株式会社 | 物干しハンガー |
| JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
| US5810928A (en) * | 1994-11-21 | 1998-09-22 | Mitsubishi Corporation | Method of measuring gas component concentrations of special material gases for semiconductor, a semiconductor equipment, and an apparatus for supplying special material gases for semiconductor |
| JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
| US6110289A (en) | 1997-02-25 | 2000-08-29 | Moore Epitaxial, Inc. | Rapid thermal processing barrel reactor for processing substrates |
| US5888303A (en) * | 1997-04-07 | 1999-03-30 | R.E. Dixon Inc. | Gas inlet apparatus and method for chemical vapor deposition reactors |
| FR2772881B1 (fr) * | 1997-12-24 | 2000-01-14 | Alpes Systeme Automation | Dispositif de distribution d'un gaz de travail et installation de fourniture d'un gaz de travail equipee d'un tel dispositif |
| KR20000002834A (ko) * | 1998-06-23 | 2000-01-15 | 윤종용 | 에어커튼이 형성되는 반도체 제조용 확산설비 및 이를 제어하는방법 |
| FR2816714B1 (fr) * | 2000-11-16 | 2003-10-10 | Shakticom | Procede et dispositif de depot de couches minces |
| US6818864B2 (en) * | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
| JP5520552B2 (ja) * | 2009-09-11 | 2014-06-11 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| JP5872141B2 (ja) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | 基板処理装置、その制御装置およびその制御方法 |
| TW201209219A (en) * | 2010-08-16 | 2012-03-01 | Hon Hai Prec Ind Co Ltd | Coating apparatus and coating method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2609564A1 (de) * | 1976-03-08 | 1977-09-15 | Siemens Ag | Verfahren zum abscheiden von elementarem silicium aus der gasphase |
| JPS55158623A (en) * | 1979-05-29 | 1980-12-10 | Hitachi Ltd | Method of controlling semiconductor vapor phase growth |
| US4332833A (en) * | 1980-02-29 | 1982-06-01 | Bell Telephone Laboratories, Incorporated | Method for optical monitoring in materials fabrication |
| US4348886A (en) * | 1980-11-19 | 1982-09-14 | Rca Corporation | Monitor for oxygen concentration in aluminum-based films |
-
1982
- 1982-01-28 JP JP57011997A patent/JPS58128728A/ja active Granted
-
1983
- 1983-01-26 US US06/461,231 patent/US4430959A/en not_active Ceased
- 1983-01-28 KR KR1019830000341A patent/KR860000251B1/ko not_active Expired
-
1988
- 1988-06-09 US US07/204,364 patent/USRE33326E/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| SOLID STATE TECHNOL.=1972 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62130515A (ja) * | 1985-12-02 | 1987-06-12 | Toshiba Mach Co Ltd | 半導体製造装置 |
| JPS62130516A (ja) * | 1985-12-02 | 1987-06-12 | Toshiba Mach Co Ltd | 半導体製造装置 |
| JPS63119233U (OSRAM) * | 1987-01-28 | 1988-08-02 | ||
| JP2002525842A (ja) * | 1998-09-14 | 2002-08-13 | アプライド マテリアルズ インコーポレイテッド | プログラム可能な処理パラメータを備えたウエハ処理リアクタシステム及びその操作方法 |
| JP4789323B2 (ja) * | 1998-09-14 | 2011-10-12 | アプライド マテリアルズ インコーポレイテッド | プログラム可能な処理パラメータを備えたウエハ処理リアクタシステム及びその操作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR840003531A (ko) | 1984-09-08 |
| US4430959A (en) | 1984-02-14 |
| KR860000251B1 (ko) | 1986-03-21 |
| JPS6328495B2 (OSRAM) | 1988-06-08 |
| USRE33326E (en) | 1990-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58128728A (ja) | 半導体気相成長装置 | |
| JP4464979B2 (ja) | 処理システム、処理方法、及び、プログラム | |
| US7896649B2 (en) | Heat system, heat method, and program | |
| EP1548809B1 (en) | Heat treatment method and heat treatment apparatus | |
| JP5766647B2 (ja) | 熱処理システム、熱処理方法、及び、プログラム | |
| TWI674329B (zh) | 基板處理裝置 | |
| JP5049303B2 (ja) | 熱処理装置、熱処理装置の温度調整方法、及び、プログラム | |
| US8354135B2 (en) | Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program | |
| US6975917B2 (en) | Heat treatment method and heat treatment device | |
| US6704667B2 (en) | Real time mass flow control system with interlock | |
| CN107236936A (zh) | 控制装置、基板处理系统、基板处理方法以及存储介质 | |
| US5244500A (en) | Process control system of semiconductor vapor phase growth apparatus | |
| WO2004040632A1 (ja) | 熱処理装置及び熱処理方法 | |
| US4982693A (en) | Semiconductor vapor phase growing apparatus | |
| EP0085397B1 (en) | Semiconductor vapor phase growing apparatus | |
| KR20130111388A (ko) | 열처리 시스템, 열처리 방법 및 기록 매체 | |
| JPS63126216A (ja) | 半導体気相成長装置 | |
| US4772485A (en) | Process control system of semiconductor vapor phase growing apparatus | |
| JP5566032B2 (ja) | 基板処理装置、半導体装置の製造方法および入力禁止プログラム | |
| TW202227661A (zh) | 基板處理裝置、半導體裝置之製造方法、基板處理方法及程式 | |
| JPS6077415A (ja) | 半導体気相成長装置のプロセス制御装置 | |
| JPS63126215A (ja) | 半導体気相成長装置 | |
| JPH0570298B2 (OSRAM) | ||
| JPH05326406A (ja) | 薄膜成長装置 | |
| TW509829B (en) | Method and system for preventing the transmission pipeline of a process from backfill |