JPH0570298B2 - - Google Patents
Info
- Publication number
- JPH0570298B2 JPH0570298B2 JP58184953A JP18495383A JPH0570298B2 JP H0570298 B2 JPH0570298 B2 JP H0570298B2 JP 58184953 A JP58184953 A JP 58184953A JP 18495383 A JP18495383 A JP 18495383A JP H0570298 B2 JPH0570298 B2 JP H0570298B2
- Authority
- JP
- Japan
- Prior art keywords
- phase growth
- thickness
- vapor phase
- flow rate
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 84
- 238000001947 vapour-phase growth Methods 0.000 claims description 57
- 238000004886 process control Methods 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000002019 doping agent Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012808 vapor phase Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 229910003902 SiCl 4 Inorganic materials 0.000 description 9
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Feedback Control In General (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18495383A JPS6077414A (ja) | 1983-10-05 | 1983-10-05 | 半導体気相成長装置のプロセス制御装置 |
| US06/873,119 US4772485A (en) | 1983-10-05 | 1986-06-10 | Process control system of semiconductor vapor phase growing apparatus |
| US07/418,724 US5244500A (en) | 1983-10-05 | 1989-10-03 | Process control system of semiconductor vapor phase growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18495383A JPS6077414A (ja) | 1983-10-05 | 1983-10-05 | 半導体気相成長装置のプロセス制御装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6077414A JPS6077414A (ja) | 1985-05-02 |
| JPH0570298B2 true JPH0570298B2 (OSRAM) | 1993-10-04 |
Family
ID=16162235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18495383A Granted JPS6077414A (ja) | 1983-10-05 | 1983-10-05 | 半導体気相成長装置のプロセス制御装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6077414A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4215977B2 (ja) * | 2001-11-30 | 2009-01-28 | 東京エレクトロン株式会社 | 成膜制御装置、成膜装置、成膜方法、膜厚流量係数算出方法、およびプログラム |
| JP7592511B2 (ja) * | 2021-02-17 | 2024-12-02 | 東京エレクトロン株式会社 | 成膜システム、成膜方法 |
-
1983
- 1983-10-05 JP JP18495383A patent/JPS6077414A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| SOLID STATE TECHNOLOGY=1972 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6077414A (ja) | 1985-05-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5487358A (en) | Apparatus for growing silicon epitaxial layer | |
| US4834831A (en) | Method for growing single crystal thin films of element semiconductor | |
| US7195934B2 (en) | Method and system for deposition tuning in an epitaxial film growth apparatus | |
| US5246536A (en) | Method for growing single crystal thin films of element semiconductor | |
| JP4428175B2 (ja) | 気相エピタキシャル成長装置および半導体ウェーハの製造方法 | |
| JPS6328495B2 (OSRAM) | ||
| KR20190080788A (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
| US6964876B2 (en) | Method and device for depositing layers | |
| JPS6134928A (ja) | 元素半導体単結晶薄膜の成長法 | |
| US5244500A (en) | Process control system of semiconductor vapor phase growth apparatus | |
| CN115491761B (zh) | 单片式外延生长装置的控制装置和控制方法以及外延晶片的制造系统 | |
| JP7230877B2 (ja) | エピタキシャルウェーハの製造システム及びエピタキシャルウェーハの製造方法 | |
| JP2668687B2 (ja) | Ｃ ｖ ｄ 装 置 | |
| US4772485A (en) | Process control system of semiconductor vapor phase growing apparatus | |
| US9653555B2 (en) | Depression filling method and processing apparatus | |
| JPH0570299B2 (OSRAM) | ||
| JPH0570298B2 (OSRAM) | ||
| JP2803460B2 (ja) | 減圧気相成長装置 | |
| JP5251243B2 (ja) | 気相成長装置およびシリコンエピタキシャル膜の気相成長方法 | |
| JP2003318172A (ja) | 成膜方法、成膜処理時間補正式の導出方法、成膜装置、およびプログラム | |
| JP3128586B2 (ja) | 薄膜成長装置 | |
| JPH0585890A (ja) | 薄膜形成装置 | |
| JPH0573326B2 (OSRAM) | ||
| JPS62172719A (ja) | 気相成長などの処理装置 | |
| WO2007032053A1 (ja) | 反応ガス供給装置及び半導体製造装置 |