JPH0573326B2 - - Google Patents
Info
- Publication number
- JPH0573326B2 JPH0573326B2 JP62253556A JP25355687A JPH0573326B2 JP H0573326 B2 JPH0573326 B2 JP H0573326B2 JP 62253556 A JP62253556 A JP 62253556A JP 25355687 A JP25355687 A JP 25355687A JP H0573326 B2 JPH0573326 B2 JP H0573326B2
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- time
- heating
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008569 process Effects 0.000 claims description 204
- 238000000034 method Methods 0.000 claims description 138
- 239000007789 gas Substances 0.000 claims description 78
- 238000010438 heat treatment Methods 0.000 claims description 55
- 238000001947 vapour-phase growth Methods 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004364 calculation method Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 description 24
- 238000003860 storage Methods 0.000 description 21
- 230000006870 function Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 238000012546 transfer Methods 0.000 description 14
- 238000010926 purge Methods 0.000 description 13
- 230000006698 induction Effects 0.000 description 11
- 229910003902 SiCl 4 Inorganic materials 0.000 description 9
- 230000005856 abnormality Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000012937 correction Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 101100166455 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) ccg-4 gene Proteins 0.000 description 5
- 101150114608 PPG1 gene Proteins 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000005587 bubbling Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000004886 process control Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 102100035353 Cyclin-dependent kinase 2-associated protein 1 Human genes 0.000 description 2
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 2
- 101000760620 Homo sapiens Cell adhesion molecule 1 Proteins 0.000 description 2
- 101000737813 Homo sapiens Cyclin-dependent kinase 2-associated protein 1 Proteins 0.000 description 2
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 2
- 101000710013 Homo sapiens Reversion-inducing cysteine-rich protein with Kazal motifs Proteins 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 238000004092 self-diagnosis Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 101100011794 Caenorhabditis elegans epi-1 gene Proteins 0.000 description 1
- 101150065817 ROM2 gene Proteins 0.000 description 1
- RRLHMJHRFMHVNM-BQVXCWBNSA-N [(2s,3r,6r)-6-[5-[5-hydroxy-3-(4-hydroxyphenyl)-4-oxochromen-7-yl]oxypentoxy]-2-methyl-3,6-dihydro-2h-pyran-3-yl] acetate Chemical compound C1=C[C@@H](OC(C)=O)[C@H](C)O[C@H]1OCCCCCOC1=CC(O)=C2C(=O)C(C=3C=CC(O)=CC=3)=COC2=C1 RRLHMJHRFMHVNM-BQVXCWBNSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000003818 cinder Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 208000035710 familial 1 hypercholesterolemia Diseases 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- PWPJGUXAGUPAHP-UHFFFAOYSA-N lufenuron Chemical compound C1=C(Cl)C(OC(F)(F)C(C(F)(F)F)F)=CC(Cl)=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F PWPJGUXAGUPAHP-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 101150015071 vent1 gene Proteins 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25355687A JPS63126216A (ja) | 1987-10-09 | 1987-10-09 | 半導体気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25355687A JPS63126216A (ja) | 1987-10-09 | 1987-10-09 | 半導体気相成長装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57011997A Division JPS58128728A (ja) | 1982-01-28 | 1982-01-28 | 半導体気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63126216A JPS63126216A (ja) | 1988-05-30 |
| JPH0573326B2 true JPH0573326B2 (OSRAM) | 1993-10-14 |
Family
ID=17253008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25355687A Granted JPS63126216A (ja) | 1987-10-09 | 1987-10-09 | 半導体気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63126216A (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03164498A (ja) * | 1989-11-22 | 1991-07-16 | Nec Corp | 半導体気相成長装置の制御方式 |
| JP2003068650A (ja) * | 2001-08-23 | 2003-03-07 | Toshiba Mach Co Ltd | 気相成長装置の運転方法 |
| JP5283352B2 (ja) * | 2007-06-26 | 2013-09-04 | 大日本スクリーン製造株式会社 | 基板処理装置 |
-
1987
- 1987-10-09 JP JP25355687A patent/JPS63126216A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| SOLID STATE TECHNOLOGY=1972 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63126216A (ja) | 1988-05-30 |
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