JPS58127318A - Forming method for single-crystal film on insulating layer - Google Patents

Forming method for single-crystal film on insulating layer

Info

Publication number
JPS58127318A
JPS58127318A JP57009738A JP973882A JPS58127318A JP S58127318 A JPS58127318 A JP S58127318A JP 57009738 A JP57009738 A JP 57009738A JP 973882 A JP973882 A JP 973882A JP S58127318 A JPS58127318 A JP S58127318A
Authority
JP
Japan
Prior art keywords
layer
substrate
single crystal
polycrystalline
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57009738A
Other languages
Japanese (ja)
Inventor
Yasushi Sawada
廉士 澤田
Junji Watanabe
純二 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57009738A priority Critical patent/JPS58127318A/en
Publication of JPS58127318A publication Critical patent/JPS58127318A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To form very efficiently a single-crystal layer of high quality by using a bar-shaped lens, by condensing laser beams on a linear zone, and by heating and melting an insulating film substrate continuously. CONSTITUTION:In order to form a polycrystalline or amorphous layer sticking on an insulating film 2 into a single-crystal layer, laser beams 9 are condensed on the polycrystalline or amorphous layer 4 by a lens 8 to heat the same, and thereby single cystals corresponding to the orientation of the crystal of a single- crystal substrate 1 are made to grow from a part 401 wherein the layer 4 is in contact with the single-crystal substrate 1 at through holes 3. The condensed laser beams 9 are moved in the direction perpendicular to the width of the substrate 1 for scanning the substrate by moving the lens 8 or by moving the substrate 1 in relation to the laser beams 9. The entire polycrystalline or amorphous layer 4 is thereby made to grow into a single-crystal layer of excellent quality with the grown single crystals as species.

Description

【発明の詳細な説明】 発明の技術分野： 本発明は絶縁層上に付着させた多結晶層又はアモルファ
ス層を高能率にかつ良質な単結晶層にアニールする方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention: The present invention relates to a method of annealing a polycrystalline or amorphous layer deposited on an insulating layer to a highly efficient and good quality single crystal layer.

技術の背量： 従来のこの種の方法は第１図に示すようにレーザビーム
走査法か、第２図に示す外部ストリップヒータの移動加
熱法によっていた。第１図において、１は単結晶基板、
２は諌単結晶基板１上に形成した絶縁体層からなる絶縁
膜、５は該絶縁膜２５の各所に設けられた分離帯又はス
ルーホール、４拡誼絶縁膜２上に付着させた多結晶層又
はアモルファス層、４０１は単結晶化し九層、５はアニ
ール加熱用レーザビーム、５０１は集光レンズである。Technical limitations: Conventional methods of this type have been based on a laser beam scanning method as shown in FIG. 1 or a moving heating method using an external strip heater as shown in FIG. In FIG. 1, 1 is a single crystal substrate;
2 is an insulating film made of an insulating layer formed on the single crystal substrate 1; 5 is a separation band or through hole provided at various places in the insulating film 25; 4 is a polycrystalline film deposited on the expanded insulating film 2; A layer or amorphous layer 401 is a nine-layer single-crystal layer, 5 is a laser beam for annealing heating, and 501 is a condenser lens.

この方法で紘し−ザビーム径５００ｐ＋ｓ前後、レーザ
パワ１０Ｆ前後の装置が使われている。In this method, a device with a beam diameter of about 500 p+s and a laser power of about 10 F is used.

一方、第２図において、１紘単結晶基板、２は絶縁体層
からなる絶縁膜、４は諌絶縁膜２上に付着させた多結晶
層又はアモルファス層、６は棒状移動ヒータ、７は下部
加熱板、１１は表面保護膜でおる。単結晶基板１の端部
４０１において、該絶縁膜２なしに該多結晶層又はアモ
ルファス層４が直接付着されてお夛、まず、この領域に
おいて誼多結晶層又はアモルファス層４が該棒状移動ヒ
ータ６によって溶融され、単結晶基板１の方位に応じた
結晶成長が起こシ、該移動ヒータ６を右方に移動させな
がら順次、該絶縁膜２上の多結晶層又はアモルファス層
４をすでに成長した単結晶を種として単結晶化していく
方法である。On the other hand, in FIG. 2, 1 is a monocrystalline substrate, 2 is an insulating film made of an insulating layer, 4 is a polycrystalline layer or an amorphous layer deposited on the insulating film 2, 6 is a rod-shaped moving heater, and 7 is a lower part. The heating plate 11 is covered with a surface protective film. At the edge 401 of the single crystal substrate 1, the polycrystalline layer or the amorphous layer 4 is directly attached without the insulating film 2. First, in this region, the polycrystalline layer or the amorphous layer 4 is attached to the rod-shaped moving heater. 6, crystal growth occurs according to the orientation of the single crystal substrate 1, and while the moving heater 6 is moved to the right, the polycrystalline layer or amorphous layer 4 on the insulating film 2 has already grown. This method uses a single crystal as a seed to form a single crystal.

従来技術と問題点： 上述した従来の第１図に示した方法では１００編φ程度
の単結晶基板１全面にわ九ってアニールするには５００
μ諷−のビームを縦・横両方向に走査する必要があシ、
長時間を要する、またビーム径５００ハφに対して均熱
領域が狭く、アニール条件が部分的に異なるため該絶縁
膜２上全面に均質な単結晶膜にすることが難しいという
欠点があった。また第２図の従来の方法では第１図の方
法における縦方向走査の必要がなく能率的であるが、棒
状移動ヒータ６によるヒータ部がらの汚染を避ける丸め
、被アニール部表面に表面保護膜１１を付着させる必要
があシ、また該ヒータ部の幅が広く、がっ、多結晶層又
紘アモルファス層４の表面から離して設定するので、広
い幅にわたって加熱領域が発生し、第１図の方法と同様
、アニール条件が部分的に異なるため該絶縁膜２上全面
に均質な単結晶膜にするには条件設定が難しいという欠
点があった。Conventional technology and problems: In the conventional method shown in FIG.
It is necessary to scan the microbeam both vertically and horizontally,
It takes a long time, and the soaking area is narrow for a beam diameter of 500mm, and the annealing conditions are partially different, so it is difficult to form a homogeneous single crystal film over the entire surface of the insulating film 2. . In addition, the conventional method shown in FIG. 2 is efficient because it does not require the vertical scanning in the method shown in FIG. 11, and since the width of the heater part is wide and is set away from the surface of the polycrystalline layer or the amorphous layer 4, a heating area is generated over a wide width, and as shown in FIG. Similar to the method described above, since the annealing conditions are partially different, it is difficult to set the conditions in order to form a homogeneous single crystal film over the entire surface of the insulating film 2.

発明の目的： 本発明は、これらの欠点を解決するために、棒状のレン
ズを用い、レーザを線状域に集光し、連続的に絶縁膜基
板を加熱、溶融することにょシ単結晶層を成長させて単
結晶膜の形成を行なうことを特徴とするもので、以下図
面について詳細に説明する。Purpose of the invention: In order to solve these drawbacks, the present invention uses a rod-shaped lens to focus a laser beam onto a linear region, and continuously heats and melts an insulating film substrate. The method is characterized in that a single crystal film is formed by growing a single crystal film, and will be described in detail below with reference to the drawings.

発明の実施例： 第３図は本発明の実施例であって、１は単結晶基板、２
紘絶縁体層からなる絶縁膜、３は該絶縁膜２に設けたス
ルーホール、４は該絶縁膜２上に付着させた多結晶層又
はアモルファス層、８は棒状のレンズ、９はレーザ光で
ある。多結晶層又はアモルファス層４を単結晶層にする
には、レーザ光９をレンズ８で多結晶層又はアそル７ア
ス層４上に集光させる。多結晶層又はアモルファス層４
は加熱され、単結晶基板１とスルーホール６で接触して
いる部分４０１から、単結晶基板１の結晶方位に対応し
た単結晶が成長する。該集光したレーザ光９を単結晶基
板１０幅と直角方向にレンズ８を、又は該基板１＠を該
レーザ光９に対して走査することによシ上記の成長した
単結晶を種として多結晶層又はアモルファス層４全体が
良質な単結晶層に成長する。Embodiment of the invention: FIG. 3 shows an embodiment of the invention, in which 1 is a single crystal substrate, 2
3 is a through hole provided in the insulating film 2; 4 is a polycrystalline layer or amorphous layer deposited on the insulating film 2; 8 is a rod-shaped lens; 9 is a laser beam be. In order to convert the polycrystalline layer or the amorphous layer 4 into a single crystal layer, the laser beam 9 is focused onto the polycrystalline layer or the amorphous layer 4 using a lens 8 . Polycrystalline layer or amorphous layer 4
is heated, and a single crystal corresponding to the crystal orientation of the single crystal substrate 1 grows from a portion 401 that is in contact with the single crystal substrate 1 through the through hole 6 . By scanning the focused laser beam 9 through a lens 8 or the substrate 1@ in a direction perpendicular to the width of the single crystal substrate 10 with respect to the laser beam 9, a polymorphism is generated using the grown single crystal as a seed. The entire crystalline or amorphous layer 4 grows into a high quality single crystal layer.

この場合の単結晶層上に多結晶層又はアモルファス層を
付着させ、加熱すれば該多結晶層又はアモルファス層は
単結晶層に成長することは一般的によく知られた現象で
、実験的にも確認されている。In this case, it is a generally well-known phenomenon that if a polycrystalline layer or an amorphous layer is deposited on a single-crystalline layer and heated, the polycrystalline or amorphous layer grows into a single-crystalline layer. has also been confirmed.

レーザ光９に関しては、光源が１個でも複数個でも、光
源の数に制限はないが、レンズ８で集光した時に被加熱
物体上を均一に加熱するように配置する。本発明の具体
的実施例を次に示す。Regarding the laser beam 9, there is no limit to the number of light sources, whether there is one or a plurality of light sources, but the laser beam 9 is arranged so that when the laser beam is focused by the lens 8, it uniformly heats the object to be heated. Specific examples of the present invention are shown below.

Ｓｉ基板上にＳｉＯ２膜を形成し、皺Ｓｉｎ＠膜上にＳ
ｌアモルファス層を付着させ、波長０．６９μ町出力１
０”Ｉｉ’＠ｔｔ／ａＪの出力のルビーレーザで照射し
た結果、線状の長さ約５−１８ｅ＠、厚さ約０．５μ票
の単結晶化された膜が得られた。A SiO2 film is formed on the Si substrate, and S is formed on the wrinkled Sin@ film.
Depositing an amorphous layer, wavelength 0.69 μm output 1
As a result of irradiation with a ruby laser with an output of 0"Ii'@tt/aJ, a single crystalline film with a linear length of about 5-18e@ and a thickness of about 0.5 .mu.m was obtained.

発明の効果： 以上説明したように、棒状のレンズを使って、レーザ光
を集光し、これを加熱源として、絶縁膜上に形成した多
結晶又はアモルファス層を単結晶化する方法であるので
、装置が非常に簡単となシ、まえ、加熱部を縦横に走査
する必要がなく操作が簡易である。さらに、均一な加熱
を得られ、高品質な単結晶層を高能率に形成できる利点
がある。Effects of the invention: As explained above, this is a method of condensing laser light using a rod-shaped lens and using this as a heating source to single-crystallize a polycrystalline or amorphous layer formed on an insulating film. The device is very simple and the operation is simple as there is no need to scan the heating section vertically and horizontally. Furthermore, there is an advantage that uniform heating can be obtained and a high quality single crystal layer can be formed with high efficiency.

【図面の簡単な説明】[Brief explanation of drawings]

第１図および第２図はそれぞれ従来の方法を示す斜視図
、第６図は本発明の一実施例な示す斜視図である。 １・・・単結晶基板、２・・・絶縁体層からなる絶縁膜
、６・・・スルーホール、４・・・多結晶層又はアモル
ファス層、４０１・・・単結晶化層、５・・・レーザビ
ーム、５０１・・・集光レンズ、６・・・棒状移動ヒー
タ、７・・・下部加熱板、８・−棒状レンズ、９・・・
レーザビーム。 特許出願人　日本電信電話公社 代理人　弁理士玉蟲久五部　（外６名）第１図 第２図1 and 2 are perspective views showing a conventional method, respectively, and FIG. 6 is a perspective view showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Single crystal substrate, 2... Insulating film consisting of an insulator layer, 6... Through hole, 4... Polycrystalline layer or amorphous layer, 401... Single crystal layer, 5...・Laser beam, 501... Condensing lens, 6... Rod-shaped moving heater, 7... Lower heating plate, 8... Rod-shaped lens, 9...
laser beam. Patent applicant Nippon Telegraph and Telephone Public Corporation agent Patent attorney Gobe Tamamushi (6 others) Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 単結晶基板上に部分的にスルーホールを有する絶縁膜を
設け、骸絶縁膜上に多結晶層又はアモルファス層を付着
させ、該多結晶層又はアモルファス層を前記スルーホー
ル部上で液相エピタキシャル成長させてこれを種とし、
皺絶縁膜上に付着させた多結晶層又はアモルファス層全
体を単結晶層にアニールする単結晶膜形成において、前
記アニールする基板上方に諌基板幅と同等又は同等以上
の長さを有する棒状レンズを、鋏棒状レンズの長手方向
を該基板幅と同一方向に配置し、鋏棒状レンズによシレ
ーザ光を前記アニールする基板上に集光し、該棒状レン
ズによシ集光したレーザ光を、該アニールする基板上を
該アニールする基板幅とファス層全体を単結晶層に７ニ
ールすることを特徴とする絶縁層上への単結晶膜形成方
法。An insulating film partially having through holes is provided on a single crystal substrate, a polycrystalline layer or an amorphous layer is deposited on the skeleton insulating film, and the polycrystalline layer or amorphous layer is grown by liquid phase epitaxial growth on the through hole portion. Take this as a seed,
In forming a single crystal film in which the entire polycrystalline layer or amorphous layer deposited on the wrinkled insulating film is annealed into a single crystal layer, a rod-shaped lens having a length equal to or greater than the width of the insulating substrate is provided above the substrate to be annealed. , the longitudinal direction of the scissor-bar lens is arranged in the same direction as the width of the substrate, the scissor-bar lens focuses the laser beam onto the substrate to be annealed, and the laser beam focused by the scissor-bar lens is applied to the substrate. 1. A method for forming a single crystal film on an insulating layer, characterized in that the width of the substrate to be annealed and the entire fas layer on the substrate to be annealed are annealed 7 times to form a single crystal layer.
JP57009738A 1982-01-25 1982-01-25 Forming method for single-crystal film on insulating layer Pending JPS58127318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57009738A JPS58127318A (en) 1982-01-25 1982-01-25 Forming method for single-crystal film on insulating layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57009738A JPS58127318A (en) 1982-01-25 1982-01-25 Forming method for single-crystal film on insulating layer

Publications (1)

Publication Number Publication Date
JPS58127318A true JPS58127318A (en) 1983-07-29

Family

ID=11728646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57009738A Pending JPS58127318A (en) 1982-01-25 1982-01-25 Forming method for single-crystal film on insulating layer

Country Status (1)

Country Link
JP (1) JPS58127318A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257718A (en) * 1986-04-30 1987-11-10 Sony Corp Solid phase epitaxy of semiconductor thin film
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US6496171B2 (en) 1998-01-23 2002-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US6549184B1 (en) 1998-03-27 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Driving circuit of a semiconductor display device and the semiconductor display device
US7304625B2 (en) 1998-03-27 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Driving circuit of a semiconductor display device and the semiconductor display device
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US6538632B1 (en) 1998-04-28 2003-03-25 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor circuit and a semiconductor display device using the same
US7042432B2 (en) 1998-04-28 2006-05-09 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor circuit and a semiconductor display using the same
US7746311B2 (en) 1998-04-28 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor circuit and a semiconductor display using the same
EP1063049A3 (en) * 1999-06-25 2003-03-26 Mitsubishi Denki Kabushiki Kaisha Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same
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US7384832B2 (en) 2000-03-21 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6872607B2 (en) 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7229864B2 (en) 2000-03-21 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
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US7652289B2 (en) 2000-11-09 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US9099362B2 (en) 2000-11-09 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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