JPS58123753A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS58123753A JPS58123753A JP591882A JP591882A JPS58123753A JP S58123753 A JPS58123753 A JP S58123753A JP 591882 A JP591882 A JP 591882A JP 591882 A JP591882 A JP 591882A JP S58123753 A JPS58123753 A JP S58123753A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- metal wiring
- ion implantation
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP591882A JPS58123753A (ja) | 1982-01-20 | 1982-01-20 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP591882A JPS58123753A (ja) | 1982-01-20 | 1982-01-20 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58123753A true JPS58123753A (ja) | 1983-07-23 |
JPH0481335B2 JPH0481335B2 (enrdf_load_stackoverflow) | 1992-12-22 |
Family
ID=11624267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP591882A Granted JPS58123753A (ja) | 1982-01-20 | 1982-01-20 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58123753A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60124851A (ja) * | 1983-12-09 | 1985-07-03 | Toshiba Corp | マイクロ波集積回路装置 |
JPS637650A (ja) * | 1986-06-27 | 1988-01-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路の配線構造 |
US5942773A (en) * | 1996-06-04 | 1999-08-24 | Fujitsu Limited | Field effect transistor with reduced delay variation |
US6200838B1 (en) | 1998-11-13 | 2001-03-13 | Fujitsu Quantum Devices Limited | Compound semiconductor device and method of manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5141977A (ja) * | 1974-10-07 | 1976-04-08 | Suwa Seikosha Kk | Handotaisochi |
JPS5643757A (en) * | 1979-09-18 | 1981-04-22 | Nec Corp | Gallium arsenic type integrated circuit |
-
1982
- 1982-01-20 JP JP591882A patent/JPS58123753A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5141977A (ja) * | 1974-10-07 | 1976-04-08 | Suwa Seikosha Kk | Handotaisochi |
JPS5643757A (en) * | 1979-09-18 | 1981-04-22 | Nec Corp | Gallium arsenic type integrated circuit |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60124851A (ja) * | 1983-12-09 | 1985-07-03 | Toshiba Corp | マイクロ波集積回路装置 |
JPS637650A (ja) * | 1986-06-27 | 1988-01-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路の配線構造 |
US5942773A (en) * | 1996-06-04 | 1999-08-24 | Fujitsu Limited | Field effect transistor with reduced delay variation |
US6200838B1 (en) | 1998-11-13 | 2001-03-13 | Fujitsu Quantum Devices Limited | Compound semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0481335B2 (enrdf_load_stackoverflow) | 1992-12-22 |
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