JPS5812365A - 薄膜トランジスタ及びその製造方法 - Google Patents

薄膜トランジスタ及びその製造方法

Info

Publication number
JPS5812365A
JPS5812365A JP56111027A JP11102781A JPS5812365A JP S5812365 A JPS5812365 A JP S5812365A JP 56111027 A JP56111027 A JP 56111027A JP 11102781 A JP11102781 A JP 11102781A JP S5812365 A JPS5812365 A JP S5812365A
Authority
JP
Japan
Prior art keywords
pattern
semiconductor layer
oxide film
pattern mask
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56111027A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0475670B2 (en, 2012
Inventor
Yutaka Takato
裕 高藤
Hiroaki Katou
加東　博章
Fumiaki Funada
船田　文明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Sharp Corp
Original Assignee
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>, Sharp Corp filed Critical JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Priority to JP56111027A priority Critical patent/JPS5812365A/ja
Priority to GB08220290A priority patent/GB2105905B/en
Priority to DE19823226097 priority patent/DE3226097A1/de
Publication of JPS5812365A publication Critical patent/JPS5812365A/ja
Priority to US06/853,034 priority patent/US4654959A/en
Publication of JPH0475670B2 publication Critical patent/JPH0475670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP56111027A 1981-07-15 1981-07-15 薄膜トランジスタ及びその製造方法 Granted JPS5812365A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56111027A JPS5812365A (ja) 1981-07-15 1981-07-15 薄膜トランジスタ及びその製造方法
GB08220290A GB2105905B (en) 1981-07-15 1982-07-13 Thin film transistor and method for the manufacture thereof
DE19823226097 DE3226097A1 (de) 1981-07-15 1982-07-13 Duennfilm-transistor und verfahren zu dessen herstellung
US06/853,034 US4654959A (en) 1981-07-15 1986-04-17 Method for the manufacture of thin film transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56111027A JPS5812365A (ja) 1981-07-15 1981-07-15 薄膜トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5812365A true JPS5812365A (ja) 1983-01-24
JPH0475670B2 JPH0475670B2 (en, 2012) 1992-12-01

Family

ID=14550533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56111027A Granted JPS5812365A (ja) 1981-07-15 1981-07-15 薄膜トランジスタ及びその製造方法

Country Status (4)

Country Link
US (1) US4654959A (en, 2012)
JP (1) JPS5812365A (en, 2012)
DE (1) DE3226097A1 (en, 2012)
GB (1) GB2105905B (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083373A (ja) * 1983-10-14 1985-05-11 Nec Corp 薄膜トランジスタアレイとその製造方法
JPS61201005A (ja) * 1985-03-04 1986-09-05 Nippon Oil Co Ltd 溶融紡糸装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2524714B1 (fr) * 1982-04-01 1986-05-02 Suwa Seikosha Kk Transistor a couche mince
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6294796B1 (en) * 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6323071B1 (en) * 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
KR940018962A (ko) * 1993-01-29 1994-08-19 이헌조 알루미나를 이용한 수직형 박막 트랜지스터 제조방법
KR950021242A (ko) * 1993-12-28 1995-07-26 김광호 다결정 실리콘 박막 트랜지스터 및 그 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667971A (en) * 1979-11-07 1981-06-08 Hitachi Ltd Preparation method of thin film transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
NL6604962A (en, 2012) * 1966-04-14 1967-10-16
US3658586A (en) * 1969-04-11 1972-04-25 Rca Corp Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals
US3775262A (en) * 1972-02-09 1973-11-27 Ncr Method of making insulated gate field effect transistor
JPS5451511A (en) * 1977-09-30 1979-04-23 Olympus Optical Co Ltd Tape recorder having time display functions
US4318216A (en) * 1978-11-13 1982-03-09 Rca Corporation Extended drain self-aligned silicon gate MOSFET
JPS5598868A (en) * 1979-01-23 1980-07-28 Sumitomo Electric Ind Ltd Insulated gate type field effect semiconductor device
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
US4242156A (en) * 1979-10-15 1980-12-30 Rockwell International Corporation Method of fabricating an SOS island edge passivation structure
JPS56126936A (en) * 1980-03-12 1981-10-05 Toshiba Corp Semiconductor device and production thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667971A (en) * 1979-11-07 1981-06-08 Hitachi Ltd Preparation method of thin film transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083373A (ja) * 1983-10-14 1985-05-11 Nec Corp 薄膜トランジスタアレイとその製造方法
JPS61201005A (ja) * 1985-03-04 1986-09-05 Nippon Oil Co Ltd 溶融紡糸装置

Also Published As

Publication number Publication date
DE3226097A1 (de) 1983-02-17
GB2105905B (en) 1985-07-31
DE3226097C2 (en, 2012) 1987-11-26
GB2105905A (en) 1983-03-30
US4654959A (en) 1987-04-07
JPH0475670B2 (en, 2012) 1992-12-01

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