JPS58114428A - 微細パタ−ン形成方法 - Google Patents
微細パタ−ン形成方法Info
- Publication number
- JPS58114428A JPS58114428A JP21033581A JP21033581A JPS58114428A JP S58114428 A JPS58114428 A JP S58114428A JP 21033581 A JP21033581 A JP 21033581A JP 21033581 A JP21033581 A JP 21033581A JP S58114428 A JPS58114428 A JP S58114428A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- layer
- mask
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007261 regionalization Effects 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 19
- 238000001312 dry etching Methods 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 abstract description 30
- 238000000992 sputter etching Methods 0.000 abstract description 10
- 239000004642 Polyimide Substances 0.000 abstract description 9
- 229910052799 carbon Inorganic materials 0.000 abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 238000010884 ion-beam technique Methods 0.000 abstract description 7
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 63
- 239000010410 layer Substances 0.000 description 25
- 239000000243 solution Substances 0.000 description 12
- 239000012528 membrane Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002362 mulch Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 241000287828 Gallus gallus Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21033581A JPS58114428A (ja) | 1981-12-28 | 1981-12-28 | 微細パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21033581A JPS58114428A (ja) | 1981-12-28 | 1981-12-28 | 微細パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114428A true JPS58114428A (ja) | 1983-07-07 |
| JPH055165B2 JPH055165B2 (en, 2012) | 1993-01-21 |
Family
ID=16587704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21033581A Granted JPS58114428A (ja) | 1981-12-28 | 1981-12-28 | 微細パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114428A (en, 2012) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107836A (ja) * | 1983-10-22 | 1985-06-13 | インターナシヨナル スタンダード エレクトリツク コーポレイシヨン | パターン形成方法 |
| JPS60147133A (ja) * | 1983-12-29 | 1985-08-03 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 半導体基板内に溝を形成する方法 |
| US7731860B2 (en) | 2003-04-03 | 2010-06-08 | Microemissive Displays Limited | Ion beam method for removing an organic light emitting material |
-
1981
- 1981-12-28 JP JP21033581A patent/JPS58114428A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107836A (ja) * | 1983-10-22 | 1985-06-13 | インターナシヨナル スタンダード エレクトリツク コーポレイシヨン | パターン形成方法 |
| JPS60147133A (ja) * | 1983-12-29 | 1985-08-03 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 半導体基板内に溝を形成する方法 |
| US7731860B2 (en) | 2003-04-03 | 2010-06-08 | Microemissive Displays Limited | Ion beam method for removing an organic light emitting material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH055165B2 (en, 2012) | 1993-01-21 |
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