JPS58114396A - 不揮発性メモリ− - Google Patents

不揮発性メモリ−

Info

Publication number
JPS58114396A
JPS58114396A JP56213616A JP21361681A JPS58114396A JP S58114396 A JPS58114396 A JP S58114396A JP 56213616 A JP56213616 A JP 56213616A JP 21361681 A JP21361681 A JP 21361681A JP S58114396 A JPS58114396 A JP S58114396A
Authority
JP
Japan
Prior art keywords
potential
transistor
type transistor
node
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56213616A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0323999B2 (enrdf_load_stackoverflow
Inventor
Sumio Tanaka
田中　寿実夫
Shigeyoshi Watanabe
重佳 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56213616A priority Critical patent/JPS58114396A/ja
Publication of JPS58114396A publication Critical patent/JPS58114396A/ja
Publication of JPH0323999B2 publication Critical patent/JPH0323999B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
JP56213616A 1981-12-26 1981-12-26 不揮発性メモリ− Granted JPS58114396A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56213616A JPS58114396A (ja) 1981-12-26 1981-12-26 不揮発性メモリ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56213616A JPS58114396A (ja) 1981-12-26 1981-12-26 不揮発性メモリ−

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3344996A Division JPH0799635B2 (ja) 1991-12-26 1991-12-26 不揮発性メモリー

Publications (2)

Publication Number Publication Date
JPS58114396A true JPS58114396A (ja) 1983-07-07
JPH0323999B2 JPH0323999B2 (enrdf_load_stackoverflow) 1991-04-02

Family

ID=16642120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56213616A Granted JPS58114396A (ja) 1981-12-26 1981-12-26 不揮発性メモリ−

Country Status (1)

Country Link
JP (1) JPS58114396A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180000A (ja) * 1984-02-03 1985-09-13 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン 電界効果トランジスタとプログラム可能読取り専用メモリとを有する集積回路
JPS6134796A (ja) * 1984-07-25 1986-02-19 Toshiba Corp 不揮発性メモリの行デコ−ダ回路
JPS61186019A (ja) * 1985-02-13 1986-08-19 Toshiba Corp Ｅ↑２ｐｒｏｍ
JPS62124700A (ja) * 1985-11-25 1987-06-05 Mitsubishi Electric Corp 電源切換回路
JPS62143297A (ja) * 1985-12-18 1987-06-26 Hitachi Ltd 半導体記憶装置
FR2631503A1 (fr) * 1988-05-10 1989-11-17 Thomson Video Equip Circuit d'interfacage pour la delivrance des signaux analogiques d'horloge a un dispositif a transfert de charges
JPH02187997A (ja) * 1989-01-16 1990-07-24 Hitachi Ltd 半導体集積回路装置
EP0317984A3 (en) * 1987-11-24 1991-01-09 Kabushiki Kaisha Toshiba Nonvolatile memory
JPH05242690A (ja) * 1992-06-19 1993-09-21 Toshiba Corp Ｅｅｐｒｏｍ
WO2004095470A1 (ja) * 2003-04-24 2004-11-04 Fujitsu Limited 不揮発性半導体メモリ
JP2008202299A (ja) * 2007-02-20 2008-09-04 Oiles Eco Corp ブラインド装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124442U (enrdf_load_stackoverflow) * 1978-02-17 1979-08-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124442U (enrdf_load_stackoverflow) * 1978-02-17 1979-08-31

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180000A (ja) * 1984-02-03 1985-09-13 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン 電界効果トランジスタとプログラム可能読取り専用メモリとを有する集積回路
JPS6134796A (ja) * 1984-07-25 1986-02-19 Toshiba Corp 不揮発性メモリの行デコ−ダ回路
JPS61186019A (ja) * 1985-02-13 1986-08-19 Toshiba Corp Ｅ↑２ｐｒｏｍ
JPS62124700A (ja) * 1985-11-25 1987-06-05 Mitsubishi Electric Corp 電源切換回路
JPS62143297A (ja) * 1985-12-18 1987-06-26 Hitachi Ltd 半導体記憶装置
US5016218A (en) * 1987-11-24 1991-05-14 Kabushiki Kaisha Toshiba Nonvolatile memory with data write circuitry to reduce write errors
EP0317984A3 (en) * 1987-11-24 1991-01-09 Kabushiki Kaisha Toshiba Nonvolatile memory
FR2631503A1 (fr) * 1988-05-10 1989-11-17 Thomson Video Equip Circuit d'interfacage pour la delivrance des signaux analogiques d'horloge a un dispositif a transfert de charges
JPH02187997A (ja) * 1989-01-16 1990-07-24 Hitachi Ltd 半導体集積回路装置
JPH05242690A (ja) * 1992-06-19 1993-09-21 Toshiba Corp Ｅｅｐｒｏｍ
WO2004095470A1 (ja) * 2003-04-24 2004-11-04 Fujitsu Limited 不揮発性半導体メモリ
US7280413B2 (en) 2003-04-24 2007-10-09 Fujitsu Limited Nonvolatile semiconductor memory
JP2008202299A (ja) * 2007-02-20 2008-09-04 Oiles Eco Corp ブラインド装置

Also Published As

Publication number Publication date
JPH0323999B2 (enrdf_load_stackoverflow) 1991-04-02

Similar Documents

Publication Publication Date Title
US5276646A (en) High voltage generating circuit for a semiconductor memory circuit
JP3091687B2 (ja) センス増幅回路
US4737936A (en) Semiconductor memory device having improved write-verify operation
JP2588483B2 (ja) Ｍｏｓ技術を応用した電圧スイッチ回路
KR100247575B1 (ko) 반도체 기억 장치
US5986937A (en) Memory read circuit with precharging limitation device
KR930001735B1 (ko) 반도체 기억장치
JP2008047189A (ja) 半導体記憶装置
JPS58114396A (ja) 不揮発性メモリ−
US5017803A (en) Power supply potential rising detection circuit
EP1226586B1 (en) Flash memory wordline tracking across whole chip
JP3607575B2 (ja) 書込可能な読出専用メモリ
JPH07272500A (ja) 不揮発性メモリ・セル中の閾値電圧の分布を測定するための回路デバイス
US4788460A (en) Circuit arrangement of sense amplifier for rapid evaluation of logic state
JP2801879B2 (ja) 不揮発性半導体メモリの共通ソース線駆動回路
KR100389173B1 (ko) 임계값 전위의 변경이 가능한 인버터
EP0668593B1 (en) Regulation circuit and method for the erasing phase of non-volatile memory cells
JPH0799635B2 (ja) 不揮発性メモリー
JP2984045B2 (ja) 半導体記憶装置
JPS5930297A (ja) 自己整合された前充電特性を持つ読出し専用メモリ
JPH08293197A (ja) 不揮発性半導体記憶装置
JPH0519239B2 (enrdf_load_stackoverflow)
JPS6321998B2 (enrdf_load_stackoverflow)
JPH07244995A (ja) リードオンリメモリのセンス回路
JPH0327998B2 (enrdf_load_stackoverflow)