JPS58112337A - 化合物半導体装置の製造方法 - Google Patents

化合物半導体装置の製造方法

Info

Publication number
JPS58112337A
JPS58112337A JP56212295A JP21229581A JPS58112337A JP S58112337 A JPS58112337 A JP S58112337A JP 56212295 A JP56212295 A JP 56212295A JP 21229581 A JP21229581 A JP 21229581A JP S58112337 A JPS58112337 A JP S58112337A
Authority
JP
Japan
Prior art keywords
compound semiconductor
back side
softening point
semiconductor device
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56212295A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0221135B2 (show.php
Inventor
Aiichiro Nara
奈良　愛一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56212295A priority Critical patent/JPS58112337A/ja
Publication of JPS58112337A publication Critical patent/JPS58112337A/ja
Publication of JPH0221135B2 publication Critical patent/JPH0221135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/0116—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
JP56212295A 1981-12-25 1981-12-25 化合物半導体装置の製造方法 Granted JPS58112337A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56212295A JPS58112337A (ja) 1981-12-25 1981-12-25 化合物半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56212295A JPS58112337A (ja) 1981-12-25 1981-12-25 化合物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58112337A true JPS58112337A (ja) 1983-07-04
JPH0221135B2 JPH0221135B2 (show.php) 1990-05-11

Family

ID=16620211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56212295A Granted JPS58112337A (ja) 1981-12-25 1981-12-25 化合物半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58112337A (show.php)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011182A (show.php) * 1973-05-28 1975-02-05
JPS5530834A (en) * 1978-08-25 1980-03-04 Nec Corp Method of forming ohmic contact in semiconductor pellet

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011182A (show.php) * 1973-05-28 1975-02-05
JPS5530834A (en) * 1978-08-25 1980-03-04 Nec Corp Method of forming ohmic contact in semiconductor pellet

Also Published As

Publication number Publication date
JPH0221135B2 (show.php) 1990-05-11

Similar Documents

Publication Publication Date Title
US5234153A (en) Permanent metallic bonding method
US6140703A (en) Semiconductor metallization structure
EP0950261B1 (de) Halbleiterkörper mit rückseitenmetallisierung
JPS6141135B2 (show.php)
JPH06252091A (ja) 半導体装置およびその製造方法
JPS58112337A (ja) 化合物半導体装置の製造方法
US3942244A (en) Semiconductor element
US4613890A (en) Alloyed contact for n-conducting GaAlAs-semi-conductor material
JPS58112336A (ja) 化合物半導体装置の電極形成法
JPS61220344A (ja) 半導体装置の製造方法
JPS6016463A (ja) オ−ム性電極
JPS5877227A (ja) オ−ミツク接点の形成方法
JPS59189625A (ja) 半導体装置の製造方法
US4081824A (en) Ohmic contact to aluminum-containing compound semiconductors
JPS58222565A (ja) 半導体装置
JPS6220338A (ja) 半導体装置の製造方法
JPS60113954A (ja) 半導体基板とヒ−トシンクとの固着方法
JPS63234562A (ja) 半導体装置の電極
JPS63253633A (ja) 半導体装置の製造方法
JPS6035822B2 (ja) 半導体装置
JPS61141155A (ja) はんだ下地電極
JPS5845814B2 (ja) 積層金属電極を有する半導体装置
JPS61156823A (ja) 半導体装置
JPS5849023B2 (ja) 半導体装置の製法
JPS6142147A (ja) 半導体装置