JPS5810818A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS5810818A
JPS5810818A JP11021981A JP11021981A JPS5810818A JP S5810818 A JPS5810818 A JP S5810818A JP 11021981 A JP11021981 A JP 11021981A JP 11021981 A JP11021981 A JP 11021981A JP S5810818 A JPS5810818 A JP S5810818A
Authority
JP
Japan
Prior art keywords
substrate
exhaust duct
gas
exhaust
reduced pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11021981A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136245B2 (enExample
Inventor
Naoichiro Tanno
淡野　直一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP11021981A priority Critical patent/JPS5810818A/ja
Publication of JPS5810818A publication Critical patent/JPS5810818A/ja
Publication of JPH0136245B2 publication Critical patent/JPH0136245B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP11021981A 1981-07-14 1981-07-14 プラズマｃｖｄ装置 Granted JPS5810818A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11021981A JPS5810818A (ja) 1981-07-14 1981-07-14 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11021981A JPS5810818A (ja) 1981-07-14 1981-07-14 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS5810818A true JPS5810818A (ja) 1983-01-21
JPH0136245B2 JPH0136245B2 (enExample) 1989-07-31

Family

ID=14530091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11021981A Granted JPS5810818A (ja) 1981-07-14 1981-07-14 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS5810818A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60132320A (ja) * 1983-12-21 1985-07-15 Matsushita Electric Ind Co Ltd 気相成長反応管
JPS60106335U (ja) * 1983-12-24 1985-07-19 株式会社島津製作所 プラズマｃｖｄ装置
US5007374A (en) * 1988-03-22 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Apparatus for forming thin films in quantity
WO1997018694A1 (fr) * 1995-11-13 1997-05-22 Ist Instant Surface Technology S.A. Reacteur a jet de plasma

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60132320A (ja) * 1983-12-21 1985-07-15 Matsushita Electric Ind Co Ltd 気相成長反応管
JPS60106335U (ja) * 1983-12-24 1985-07-19 株式会社島津製作所 プラズマｃｖｄ装置
US5007374A (en) * 1988-03-22 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Apparatus for forming thin films in quantity
WO1997018694A1 (fr) * 1995-11-13 1997-05-22 Ist Instant Surface Technology S.A. Reacteur a jet de plasma

Also Published As

Publication number Publication date
JPH0136245B2 (enExample) 1989-07-31

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