JP2005511895A5 - - Google Patents

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Publication number
JP2005511895A5
JP2005511895A5 JP2003549589A JP2003549589A JP2005511895A5 JP 2005511895 A5 JP2005511895 A5 JP 2005511895A5 JP 2003549589 A JP2003549589 A JP 2003549589A JP 2003549589 A JP2003549589 A JP 2003549589A JP 2005511895 A5 JP2005511895 A5 JP 2005511895A5
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JP
Japan
Prior art keywords
reactor
gas
moving
precursor gas
reactor chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003549589A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005511895A (ja
Filing date
Publication date
Priority claimed from US10/214,272 external-priority patent/US20020195055A1/en
Application filed filed Critical
Priority claimed from PCT/US2002/038565 external-priority patent/WO2003048414A1/en
Publication of JP2005511895A publication Critical patent/JP2005511895A/ja
Publication of JP2005511895A5 publication Critical patent/JP2005511895A5/ja
Pending legal-status Critical Current

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JP2003549589A 2001-12-04 2002-12-04 化学蒸着反応器 Pending JP2005511895A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33763901P 2001-12-04 2001-12-04
US10/214,272 US20020195055A1 (en) 2000-10-16 2002-08-06 Vortex based CVD reactor
PCT/US2002/038565 WO2003048414A1 (en) 2001-12-04 2002-12-04 Chemical vapor deposition reactor

Publications (2)

Publication Number Publication Date
JP2005511895A JP2005511895A (ja) 2005-04-28
JP2005511895A5 true JP2005511895A5 (enExample) 2005-12-22

Family

ID=26908840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003549589A Pending JP2005511895A (ja) 2001-12-04 2002-12-04 化学蒸着反応器

Country Status (4)

Country Link
EP (1) EP1451387A1 (enExample)
JP (1) JP2005511895A (enExample)
AU (1) AU2002353021A1 (enExample)
WO (1) WO2003048414A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
US8985152B2 (en) * 2012-06-15 2015-03-24 Novellus Systems, Inc. Point of use valve manifold for semiconductor fabrication equipment
TWI502096B (zh) 2013-06-17 2015-10-01 Ind Tech Res Inst 用於化學氣相沉積的反應裝置及反應製程
CN103456593B (zh) * 2013-09-02 2016-02-10 东莞市中镓半导体科技有限公司 一种改进多片式外延材料厚度分布均匀性的氢化物气相沉积装置与方法
JP6478103B2 (ja) * 2015-01-29 2019-03-06 株式会社Flosfia 成膜装置および成膜方法
CA2974387A1 (en) * 2016-08-30 2018-02-28 Rolls-Royce Corporation Swirled flow chemical vapor deposition
WO2023140824A2 (en) * 2022-01-24 2023-07-27 Tobb Ekonomi Ve Teknoloji Universitesi A reactor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5375857A (en) * 1976-12-17 1978-07-05 Nec Corp Vapor phase growth apparatus
JPS54111771A (en) * 1978-02-22 1979-09-01 Toshiba Corp Gas phase reaction unit of semiconductor substrate
JPS6134933A (ja) * 1984-07-26 1986-02-19 Fujitsu Ltd プラズマ気相成長装置
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition

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