AU2002353021A1 - Chemical vapor deposition reactor - Google Patents

Chemical vapor deposition reactor

Info

Publication number
AU2002353021A1
AU2002353021A1 AU2002353021A AU2002353021A AU2002353021A1 AU 2002353021 A1 AU2002353021 A1 AU 2002353021A1 AU 2002353021 A AU2002353021 A AU 2002353021A AU 2002353021 A AU2002353021 A AU 2002353021A AU 2002353021 A1 AU2002353021 A1 AU 2002353021A1
Authority
AU
Australia
Prior art keywords
vapor deposition
chemical vapor
deposition reactor
reactor
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002353021A
Other languages
English (en)
Inventor
Matthew D. Brubaker
Robert W. Grant
Paul D. Mumbauer
Benjamin J. Petrone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Primaxx Inc
Original Assignee
Primaxx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/214,272 external-priority patent/US20020195055A1/en
Application filed by Primaxx Inc filed Critical Primaxx Inc
Publication of AU2002353021A1 publication Critical patent/AU2002353021A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2002353021A 2001-12-04 2002-12-04 Chemical vapor deposition reactor Abandoned AU2002353021A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US33763901P 2001-12-04 2001-12-04
US60/337,639 2001-12-04
US10/214,272 US20020195055A1 (en) 2000-10-16 2002-08-06 Vortex based CVD reactor
US10/214,272 2002-08-06
PCT/US2002/038565 WO2003048414A1 (en) 2001-12-04 2002-12-04 Chemical vapor deposition reactor

Publications (1)

Publication Number Publication Date
AU2002353021A1 true AU2002353021A1 (en) 2003-06-17

Family

ID=26908840

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002353021A Abandoned AU2002353021A1 (en) 2001-12-04 2002-12-04 Chemical vapor deposition reactor

Country Status (4)

Country Link
EP (1) EP1451387A1 (enExample)
JP (1) JP2005511895A (enExample)
AU (1) AU2002353021A1 (enExample)
WO (1) WO2003048414A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
US8985152B2 (en) * 2012-06-15 2015-03-24 Novellus Systems, Inc. Point of use valve manifold for semiconductor fabrication equipment
TWI502096B (zh) * 2013-06-17 2015-10-01 Ind Tech Res Inst 用於化學氣相沉積的反應裝置及反應製程
CN103456593B (zh) * 2013-09-02 2016-02-10 东莞市中镓半导体科技有限公司 一种改进多片式外延材料厚度分布均匀性的氢化物气相沉积装置与方法
JP6478103B2 (ja) * 2015-01-29 2019-03-06 株式会社Flosfia 成膜装置および成膜方法
CA2974387A1 (en) * 2016-08-30 2018-02-28 Rolls-Royce Corporation Swirled flow chemical vapor deposition
WO2023140824A2 (en) * 2022-01-24 2023-07-27 Tobb Ekonomi Ve Teknoloji Universitesi A reactor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5375857A (en) * 1976-12-17 1978-07-05 Nec Corp Vapor phase growth apparatus
JPS54111771A (en) * 1978-02-22 1979-09-01 Toshiba Corp Gas phase reaction unit of semiconductor substrate
JPS6134933A (ja) * 1984-07-26 1986-02-19 Fujitsu Ltd プラズマ気相成長装置
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition

Also Published As

Publication number Publication date
JP2005511895A (ja) 2005-04-28
EP1451387A1 (en) 2004-09-01
WO2003048414A1 (en) 2003-06-12

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase