JPH0136245B2 - - Google Patents

Info

Publication number
JPH0136245B2
JPH0136245B2 JP56110219A JP11021981A JPH0136245B2 JP H0136245 B2 JPH0136245 B2 JP H0136245B2 JP 56110219 A JP56110219 A JP 56110219A JP 11021981 A JP11021981 A JP 11021981A JP H0136245 B2 JPH0136245 B2 JP H0136245B2
Authority
JP
Japan
Prior art keywords
substrate
exhaust duct
gas
opening
exhaust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56110219A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5810818A (ja
Inventor
Naoichiro Tanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP11021981A priority Critical patent/JPS5810818A/ja
Publication of JPS5810818A publication Critical patent/JPS5810818A/ja
Publication of JPH0136245B2 publication Critical patent/JPH0136245B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP11021981A 1981-07-14 1981-07-14 プラズマｃｖｄ装置 Granted JPS5810818A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11021981A JPS5810818A (ja) 1981-07-14 1981-07-14 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11021981A JPS5810818A (ja) 1981-07-14 1981-07-14 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS5810818A JPS5810818A (ja) 1983-01-21
JPH0136245B2 true JPH0136245B2 (enExample) 1989-07-31

Family

ID=14530091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11021981A Granted JPS5810818A (ja) 1981-07-14 1981-07-14 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS5810818A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60132320A (ja) * 1983-12-21 1985-07-15 Matsushita Electric Ind Co Ltd 気相成長反応管
JPS60106335U (ja) * 1983-12-24 1985-07-19 株式会社島津製作所 プラズマｃｖｄ装置
JPH01239919A (ja) * 1988-03-22 1989-09-25 Semiconductor Energy Lab Co Ltd プラズマ処理方法およびプラズマ処理装置
WO1997018694A1 (fr) * 1995-11-13 1997-05-22 Ist Instant Surface Technology S.A. Reacteur a jet de plasma

Also Published As

Publication number Publication date
JPS5810818A (ja) 1983-01-21

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