JPS58102563A - 不揮発性半導体メモリ - Google Patents

不揮発性半導体メモリ

Info

Publication number
JPS58102563A
JPS58102563A JP56201842A JP20184281A JPS58102563A JP S58102563 A JPS58102563 A JP S58102563A JP 56201842 A JP56201842 A JP 56201842A JP 20184281 A JP20184281 A JP 20184281A JP S58102563 A JPS58102563 A JP S58102563A
Authority
JP
Japan
Prior art keywords
region
channel region
channel
gate insulating
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56201842A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6314504B2 (en, 2012
Inventor
Yutaka Hayashi
豊 林
Yoshikazu Kojima
芳和 小島
Masaaki Kamiya
昌明 神谷
Kojiro Tanaka
小次郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Seiko Instruments Inc filed Critical Agency of Industrial Science and Technology
Priority to JP56201842A priority Critical patent/JPS58102563A/ja
Publication of JPS58102563A publication Critical patent/JPS58102563A/ja
Publication of JPS6314504B2 publication Critical patent/JPS6314504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56201842A 1981-12-15 1981-12-15 不揮発性半導体メモリ Granted JPS58102563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56201842A JPS58102563A (ja) 1981-12-15 1981-12-15 不揮発性半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56201842A JPS58102563A (ja) 1981-12-15 1981-12-15 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
JPS58102563A true JPS58102563A (ja) 1983-06-18
JPS6314504B2 JPS6314504B2 (en, 2012) 1988-03-31

Family

ID=16447792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56201842A Granted JPS58102563A (ja) 1981-12-15 1981-12-15 不揮発性半導体メモリ

Country Status (1)

Country Link
JP (1) JPS58102563A (en, 2012)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182776A (ja) * 1984-02-29 1985-09-18 Agency Of Ind Science & Technol 不揮発性半導体メモリ
JPS61131484A (ja) * 1984-11-29 1986-06-19 Res Dev Corp Of Japan 半導体不揮発性メモリ
JPS61131483A (ja) * 1984-11-29 1986-06-19 Res Dev Corp Of Japan 不揮発性メモリの書込み法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182776A (ja) * 1984-02-29 1985-09-18 Agency Of Ind Science & Technol 不揮発性半導体メモリ
JPS61131484A (ja) * 1984-11-29 1986-06-19 Res Dev Corp Of Japan 半導体不揮発性メモリ
JPS61131483A (ja) * 1984-11-29 1986-06-19 Res Dev Corp Of Japan 不揮発性メモリの書込み法

Also Published As

Publication number Publication date
JPS6314504B2 (en, 2012) 1988-03-31

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