JPS58102549A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS58102549A
JPS58102549A JP56200198A JP20019881A JPS58102549A JP S58102549 A JPS58102549 A JP S58102549A JP 56200198 A JP56200198 A JP 56200198A JP 20019881 A JP20019881 A JP 20019881A JP S58102549 A JPS58102549 A JP S58102549A
Authority
JP
Japan
Prior art keywords
type
region
diode
diffusion region
type diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56200198A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0363221B2 (enExample
Inventor
Yasunobu Inabe
井鍋　泰宣
Yoshikazu Hosokawa
細川　義和
Toshikatsu Shirasawa
白沢　敏克
Kiyoshi Tsukuda
佃　清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
NTT Inc
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP56200198A priority Critical patent/JPS58102549A/ja
Publication of JPS58102549A publication Critical patent/JPS58102549A/ja
Publication of JPH0363221B2 publication Critical patent/JPH0363221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP56200198A 1981-12-14 1981-12-14 半導体集積回路 Granted JPS58102549A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56200198A JPS58102549A (ja) 1981-12-14 1981-12-14 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56200198A JPS58102549A (ja) 1981-12-14 1981-12-14 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS58102549A true JPS58102549A (ja) 1983-06-18
JPH0363221B2 JPH0363221B2 (enExample) 1991-09-30

Family

ID=16420426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56200198A Granted JPS58102549A (ja) 1981-12-14 1981-12-14 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS58102549A (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122983A (en) * 1978-03-17 1979-09-22 Hitachi Ltd Semiconductor integrated circuit
JPS55158664A (en) * 1979-05-29 1980-12-10 Thomson Csf Monolithic integrated structure and method of manufacturing same
JPS5617051A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor junction capacitor device
JPS5632759A (en) * 1979-08-27 1981-04-02 Shindengen Electric Mfg Co Ltd Full-wave rectifying semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122983A (en) * 1978-03-17 1979-09-22 Hitachi Ltd Semiconductor integrated circuit
JPS55158664A (en) * 1979-05-29 1980-12-10 Thomson Csf Monolithic integrated structure and method of manufacturing same
JPS5617051A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor junction capacitor device
JPS5632759A (en) * 1979-08-27 1981-04-02 Shindengen Electric Mfg Co Ltd Full-wave rectifying semiconductor device

Also Published As

Publication number Publication date
JPH0363221B2 (enExample) 1991-09-30

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