JPS5632759A - Full-wave rectifying semiconductor device - Google Patents

Full-wave rectifying semiconductor device

Info

Publication number
JPS5632759A
JPS5632759A JP10890079A JP10890079A JPS5632759A JP S5632759 A JPS5632759 A JP S5632759A JP 10890079 A JP10890079 A JP 10890079A JP 10890079 A JP10890079 A JP 10890079A JP S5632759 A JPS5632759 A JP S5632759A
Authority
JP
Japan
Prior art keywords
regions
full
semiconductor device
substrate
wave rectifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10890079A
Other languages
Japanese (ja)
Inventor
Takashi Suga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP10890079A priority Critical patent/JPS5632759A/en
Publication of JPS5632759A publication Critical patent/JPS5632759A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Rectifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the production cost and the size of the full-wave rectifying semiconductor device by forming a plurality of reverse conductivity type regions in a one-conductivity type semiconductor substrate as rectifying circuits, combining them and connecting them as the full-wave rectifier. CONSTITUTION:A plurality of segmented N type regions 2a, 2b, 2c are diffused in a P type semiconductor substrate 1, and P type regions 3a, 3b are formed in one 2a of the regions 2a, 2b, 2c. In this manner rectifying circuits are formed of these regions and the substrate, the regions 2a, 3b are commonly connected as one AC input terminal a. The regions 2b, 3b are commonly connected as another AC input terminal c, a positive output terminal b is led out from the exposed region 2c between the regions 3a and 3b, and a negative terminal d is led out from the exposed surface of the substrate 1. In this manner a single-phase circuit is formed on each of the substrates, is combined, and can be simplified in the full-wave rectifier.
JP10890079A 1979-08-27 1979-08-27 Full-wave rectifying semiconductor device Pending JPS5632759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10890079A JPS5632759A (en) 1979-08-27 1979-08-27 Full-wave rectifying semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10890079A JPS5632759A (en) 1979-08-27 1979-08-27 Full-wave rectifying semiconductor device

Publications (1)

Publication Number Publication Date
JPS5632759A true JPS5632759A (en) 1981-04-02

Family

ID=14496463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10890079A Pending JPS5632759A (en) 1979-08-27 1979-08-27 Full-wave rectifying semiconductor device

Country Status (1)

Country Link
JP (1) JPS5632759A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102549A (en) * 1981-12-14 1983-06-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor ic
US5775121A (en) * 1995-11-07 1998-07-07 Kabushiki Kaisha Seibu Giken Method and device for refrigerating a fluid
CN102956512A (en) * 2011-08-17 2013-03-06 美丽微半导体股份有限公司 Flip-chip type semiconductor full-wave rectifying element and production method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938583A (en) * 1972-08-09 1974-04-10
JPS4976482A (en) * 1972-11-27 1974-07-23
JPS50153878A (en) * 1974-05-30 1975-12-11
JPS50159684A (en) * 1974-06-13 1975-12-24
JPS5112774A (en) * 1974-07-22 1976-01-31 Tokyo Shibaura Electric Co ZENPASEIRYUHANDOTAISOCHI

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938583A (en) * 1972-08-09 1974-04-10
JPS4976482A (en) * 1972-11-27 1974-07-23
JPS50153878A (en) * 1974-05-30 1975-12-11
JPS50159684A (en) * 1974-06-13 1975-12-24
JPS5112774A (en) * 1974-07-22 1976-01-31 Tokyo Shibaura Electric Co ZENPASEIRYUHANDOTAISOCHI

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102549A (en) * 1981-12-14 1983-06-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor ic
JPH0363221B2 (en) * 1981-12-14 1991-09-30 Nippon Denshin Denwa Kk
US5775121A (en) * 1995-11-07 1998-07-07 Kabushiki Kaisha Seibu Giken Method and device for refrigerating a fluid
US6055824A (en) * 1995-11-07 2000-05-02 Kabushiki Gaisha Seibu Giken Method and device for refrigerating a fluid
CN102956512A (en) * 2011-08-17 2013-03-06 美丽微半导体股份有限公司 Flip-chip type semiconductor full-wave rectifying element and production method thereof

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