JPS5797673A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS5797673A
JPS5797673A JP17422580A JP17422580A JPS5797673A JP S5797673 A JPS5797673 A JP S5797673A JP 17422580 A JP17422580 A JP 17422580A JP 17422580 A JP17422580 A JP 17422580A JP S5797673 A JPS5797673 A JP S5797673A
Authority
JP
Japan
Prior art keywords
gate
source
drain
polysilicon
oxidized film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17422580A
Other languages
English (en)
Inventor
Masao Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17422580A priority Critical patent/JPS5797673A/ja
Publication of JPS5797673A publication Critical patent/JPS5797673A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
JP17422580A 1980-12-10 1980-12-10 Mos transistor Pending JPS5797673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17422580A JPS5797673A (en) 1980-12-10 1980-12-10 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17422580A JPS5797673A (en) 1980-12-10 1980-12-10 Mos transistor

Publications (1)

Publication Number Publication Date
JPS5797673A true JPS5797673A (en) 1982-06-17

Family

ID=15974905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17422580A Pending JPS5797673A (en) 1980-12-10 1980-12-10 Mos transistor

Country Status (1)

Country Link
JP (1) JPS5797673A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006007764A1 (fr) * 2004-07-22 2006-01-26 Quanta Display Inc. Transistor a film mince en polysilicium basse temperature et procede de fabrication de ce film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52103974A (en) * 1976-02-26 1977-08-31 Nec Corp Semicondcutor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52103974A (en) * 1976-02-26 1977-08-31 Nec Corp Semicondcutor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006007764A1 (fr) * 2004-07-22 2006-01-26 Quanta Display Inc. Transistor a film mince en polysilicium basse temperature et procede de fabrication de ce film

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