JPS5797630A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5797630A
JPS5797630A JP55173256A JP17325680A JPS5797630A JP S5797630 A JPS5797630 A JP S5797630A JP 55173256 A JP55173256 A JP 55173256A JP 17325680 A JP17325680 A JP 17325680A JP S5797630 A JPS5797630 A JP S5797630A
Authority
JP
Japan
Prior art keywords
layer
wafer
impurity
semiconductor device
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55173256A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6119102B2 (enExample
Inventor
Osamu Okura
Yukio Takano
Masao Tamura
Nobuyoshi Kashu
Naoji Yoshihiro
Masanobu Miyao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55173256A priority Critical patent/JPS5797630A/ja
Publication of JPS5797630A publication Critical patent/JPS5797630A/ja
Publication of JPS6119102B2 publication Critical patent/JPS6119102B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/30—
    • H10W72/073—
    • H10W72/07337—

Landscapes

  • Die Bonding (AREA)
JP55173256A 1980-12-10 1980-12-10 Manufacture of semiconductor device Granted JPS5797630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55173256A JPS5797630A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55173256A JPS5797630A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5797630A true JPS5797630A (en) 1982-06-17
JPS6119102B2 JPS6119102B2 (enExample) 1986-05-15

Family

ID=15957065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55173256A Granted JPS5797630A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797630A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63211635A (ja) * 1987-02-26 1988-09-02 Nec Corp 半導体装置
US6498366B1 (en) 1990-02-14 2002-12-24 Denso Corporation Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode
JP2005277116A (ja) * 2004-03-25 2005-10-06 Elpida Memory Inc 半導体装置及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63211635A (ja) * 1987-02-26 1988-09-02 Nec Corp 半導体装置
US6498366B1 (en) 1990-02-14 2002-12-24 Denso Corporation Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode
US6649478B2 (en) 1990-02-14 2003-11-18 Denso Corporation Semiconductor device and method of manufacturing same
US20040237327A1 (en) * 1990-02-14 2004-12-02 Yoshifumi Okabe Semiconductor device and method of manufacturing same
US6903417B2 (en) 1990-02-14 2005-06-07 Denso Corporation Power semiconductor device
US7064033B2 (en) 1990-02-14 2006-06-20 Denso Corporation Semiconductor device and method of manufacturing same
JP2005277116A (ja) * 2004-03-25 2005-10-06 Elpida Memory Inc 半導体装置及びその製造方法
US7666761B2 (en) 2004-03-25 2010-02-23 Elpida Memory, Inc. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6119102B2 (enExample) 1986-05-15

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