JPS5793549A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5793549A JPS5793549A JP55170396A JP17039680A JPS5793549A JP S5793549 A JPS5793549 A JP S5793549A JP 55170396 A JP55170396 A JP 55170396A JP 17039680 A JP17039680 A JP 17039680A JP S5793549 A JPS5793549 A JP S5793549A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- pattern
- semiconductor device
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To shorten the manufacturing steps of a semiconductor device and to reduce the cost thereof by forming a pattern of an electrode wire readily without a photoresist film, thereby forming an IC or the like. CONSTITUTION:A PSG film 7 is formed on an Si substrate 6 formed with a source region 2 and a drain region 3, etc. a connecting hole 8 is opened, an aluminum layer 9 is deposited, a Cu layer 10 is deposted, and an SiO2 film 11 is further formed by a CVD method. Thereafter, when the film 11 is emitted in the prescribed pattern by a CO2 laser of 10mum of wavelength and 20-30W of power, the layers 9 and 10 are alloyed, and a specific pattern is formed. Then, it is plasma etched to remove the SiO2 film, the Cu layer is also dissolved with aqueous ammonia solution, with the layer 21 as a mask, the aluminum layer is removed with CCl4 gas, the alloy 21 of Cu and Al remains, and the wiring layer of the prescribed pattern (source and drain electrodes) can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55170396A JPS5793549A (en) | 1980-12-03 | 1980-12-03 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55170396A JPS5793549A (en) | 1980-12-03 | 1980-12-03 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5793549A true JPS5793549A (en) | 1982-06-10 |
Family
ID=15904145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55170396A Pending JPS5793549A (en) | 1980-12-03 | 1980-12-03 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5793549A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62279677A (en) * | 1986-03-21 | 1987-12-04 | アドバンスド、パワ−、テクノロジ−、インコ−ポレ−テツド | Manufacture of semiconductor device |
-
1980
- 1980-12-03 JP JP55170396A patent/JPS5793549A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62279677A (en) * | 1986-03-21 | 1987-12-04 | アドバンスド、パワ−、テクノロジ−、インコ−ポレ−テツド | Manufacture of semiconductor device |
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