JPS5792885A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5792885A
JPS5792885A JP17001080A JP17001080A JPS5792885A JP S5792885 A JPS5792885 A JP S5792885A JP 17001080 A JP17001080 A JP 17001080A JP 17001080 A JP17001080 A JP 17001080A JP S5792885 A JPS5792885 A JP S5792885A
Authority
JP
Japan
Prior art keywords
layer
concave
substrate
clad
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17001080A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0211025B2 (enrdf_load_stackoverflow
Inventor
Toshiro Hayakawa
Saburo Yamamoto
Jiyunkou Takagi
Naotaka Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17001080A priority Critical patent/JPS5792885A/ja
Publication of JPS5792885A publication Critical patent/JPS5792885A/ja
Publication of JPH0211025B2 publication Critical patent/JPH0211025B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP17001080A 1980-12-01 1980-12-01 Semiconductor laser element Granted JPS5792885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17001080A JPS5792885A (en) 1980-12-01 1980-12-01 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17001080A JPS5792885A (en) 1980-12-01 1980-12-01 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5792885A true JPS5792885A (en) 1982-06-09
JPH0211025B2 JPH0211025B2 (enrdf_load_stackoverflow) 1990-03-12

Family

ID=15896909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17001080A Granted JPS5792885A (en) 1980-12-01 1980-12-01 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5792885A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147479A (ja) * 1983-02-09 1984-08-23 Sharp Corp 半導体レ−ザ素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS55140285A (en) * 1979-03-22 1980-11-01 Nec Corp Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS55140285A (en) * 1979-03-22 1980-11-01 Nec Corp Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147479A (ja) * 1983-02-09 1984-08-23 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
JPH0211025B2 (enrdf_load_stackoverflow) 1990-03-12

Similar Documents

Publication Publication Date Title
JPS5710285A (en) Semiconductor laser
JPS5743487A (en) Semiconductor laser
JPS5792885A (en) Semiconductor laser element
JPS5756985A (en) Semiconductor laser
JPS5681993A (en) Semiconductor laser element
JPS57183091A (en) Manufacture of optical integrated circuit
JPS54107354A (en) Semiconductor multilayer thin film optical guide and production of the same
JPS645088A (en) Semiconductor laser device
JPS5518094A (en) Semiconductor laser device with high optical output and horizontal fundamental mode
JPS55140286A (en) Buried heterogeneous structure semiconductor for use in laser
JPS57170585A (en) Semiconductor laser device
JPS57162483A (en) Semiconductor luminous device
JPS57199288A (en) Laser diode
JPS56110291A (en) Semiconductor laser element and manufacture thereof
JPS5769793A (en) Semiconductor laser device
JPS6442884A (en) Semiconductor laser element
JPS5448569A (en) Photo switch
JPS6484777A (en) Integrated semiconductor laser
EP0205284A3 (en) Optical waveguides
JPS6435977A (en) Semiconductor laser device
Leonov et al. Production and Study of Optical Properties of Epitaxial Bi sub 12 TiO sub 20 Wave Guide on Bi sub 12 GeO sub 20 Base
JPS5591894A (en) Semiconductor light emission device
JPS54115087A (en) Double hetero junction laser of stripe type
JPS5696889A (en) Semiconductor light emitting device
JPS57172789A (en) Semiconductor laser element