JPS5792885A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS5792885A JPS5792885A JP17001080A JP17001080A JPS5792885A JP S5792885 A JPS5792885 A JP S5792885A JP 17001080 A JP17001080 A JP 17001080A JP 17001080 A JP17001080 A JP 17001080A JP S5792885 A JPS5792885 A JP S5792885A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- concave
- substrate
- clad
- clad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17001080A JPS5792885A (en) | 1980-12-01 | 1980-12-01 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17001080A JPS5792885A (en) | 1980-12-01 | 1980-12-01 | Semiconductor laser element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5792885A true JPS5792885A (en) | 1982-06-09 |
JPH0211025B2 JPH0211025B2 (enrdf_load_stackoverflow) | 1990-03-12 |
Family
ID=15896909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17001080A Granted JPS5792885A (en) | 1980-12-01 | 1980-12-01 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5792885A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59147479A (ja) * | 1983-02-09 | 1984-08-23 | Sharp Corp | 半導体レ−ザ素子 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
JPS55140285A (en) * | 1979-03-22 | 1980-11-01 | Nec Corp | Semiconductor laser |
-
1980
- 1980-12-01 JP JP17001080A patent/JPS5792885A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
JPS55140285A (en) * | 1979-03-22 | 1980-11-01 | Nec Corp | Semiconductor laser |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59147479A (ja) * | 1983-02-09 | 1984-08-23 | Sharp Corp | 半導体レ−ザ素子 |
Also Published As
Publication number | Publication date |
---|---|
JPH0211025B2 (enrdf_load_stackoverflow) | 1990-03-12 |
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