JPH0211025B2 - - Google Patents
Info
- Publication number
- JPH0211025B2 JPH0211025B2 JP55170010A JP17001080A JPH0211025B2 JP H0211025 B2 JPH0211025 B2 JP H0211025B2 JP 55170010 A JP55170010 A JP 55170010A JP 17001080 A JP17001080 A JP 17001080A JP H0211025 B2 JPH0211025 B2 JP H0211025B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cladding layer
- refractive index
- cladding
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17001080A JPS5792885A (en) | 1980-12-01 | 1980-12-01 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17001080A JPS5792885A (en) | 1980-12-01 | 1980-12-01 | Semiconductor laser element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5792885A JPS5792885A (en) | 1982-06-09 |
JPH0211025B2 true JPH0211025B2 (enrdf_load_stackoverflow) | 1990-03-12 |
Family
ID=15896909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17001080A Granted JPS5792885A (en) | 1980-12-01 | 1980-12-01 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5792885A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59147479A (ja) * | 1983-02-09 | 1984-08-23 | Sharp Corp | 半導体レ−ザ素子 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7707720A (nl) * | 1977-07-12 | 1979-01-16 | Philips Nv | Halfgeleiderlaser of -versterker. |
JPS5832794B2 (ja) * | 1979-03-22 | 1983-07-15 | 日本電気株式会社 | 半導体レ−ザ |
-
1980
- 1980-12-01 JP JP17001080A patent/JPS5792885A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5792885A (en) | 1982-06-09 |
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