JPH0256836B2 - - Google Patents

Info

Publication number
JPH0256836B2
JPH0256836B2 JP59084600A JP8460084A JPH0256836B2 JP H0256836 B2 JPH0256836 B2 JP H0256836B2 JP 59084600 A JP59084600 A JP 59084600A JP 8460084 A JP8460084 A JP 8460084A JP H0256836 B2 JPH0256836 B2 JP H0256836B2
Authority
JP
Japan
Prior art keywords
layer
gaas
gaalas
semiconductor laser
current blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59084600A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60226191A (ja
Inventor
Saburo Yamamoto
Hiroshi Hayashi
Taiji Morimoto
Morichika Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8460084A priority Critical patent/JPS60226191A/ja
Publication of JPS60226191A publication Critical patent/JPS60226191A/ja
Publication of JPH0256836B2 publication Critical patent/JPH0256836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
JP8460084A 1984-04-25 1984-04-25 半導体レ−ザ素子 Granted JPS60226191A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8460084A JPS60226191A (ja) 1984-04-25 1984-04-25 半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8460084A JPS60226191A (ja) 1984-04-25 1984-04-25 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS60226191A JPS60226191A (ja) 1985-11-11
JPH0256836B2 true JPH0256836B2 (enrdf_load_stackoverflow) 1990-12-03

Family

ID=13835173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8460084A Granted JPS60226191A (ja) 1984-04-25 1984-04-25 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS60226191A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179789A (ja) * 1986-02-03 1987-08-06 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPH07114301B2 (ja) * 1986-02-12 1995-12-06 松下電器産業株式会社 半導体レ−ザ装置
JPS62296583A (ja) * 1986-06-17 1987-12-23 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135994A (en) * 1980-03-28 1981-10-23 Fujitsu Ltd Semiconductor light emitting device

Also Published As

Publication number Publication date
JPS60226191A (ja) 1985-11-11

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