JPS5792865A - Manufacture of semiconductor memory device - Google Patents

Manufacture of semiconductor memory device

Info

Publication number
JPS5792865A
JPS5792865A JP55168616A JP16861680A JPS5792865A JP S5792865 A JPS5792865 A JP S5792865A JP 55168616 A JP55168616 A JP 55168616A JP 16861680 A JP16861680 A JP 16861680A JP S5792865 A JPS5792865 A JP S5792865A
Authority
JP
Japan
Prior art keywords
gate
erasing
oxide film
film
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55168616A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225273B2 (enrdf_load_stackoverflow
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55168616A priority Critical patent/JPS5792865A/ja
Priority to EP81305349A priority patent/EP0052982B1/en
Priority to DE8181305349T priority patent/DE3175125D1/de
Priority to US06/321,322 priority patent/US4803529A/en
Publication of JPS5792865A publication Critical patent/JPS5792865A/ja
Publication of JPS6225273B2 publication Critical patent/JPS6225273B2/ja
Priority to US07/193,079 priority patent/US4910565A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP55168616A 1980-11-20 1980-11-29 Manufacture of semiconductor memory device Granted JPS5792865A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55168616A JPS5792865A (en) 1980-11-29 1980-11-29 Manufacture of semiconductor memory device
EP81305349A EP0052982B1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
DE8181305349T DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
US06/321,322 US4803529A (en) 1980-11-20 1981-11-13 Electrically erasable and electrically programmable read only memory
US07/193,079 US4910565A (en) 1980-11-20 1988-05-12 Electrically erasable and electrically programmable read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55168616A JPS5792865A (en) 1980-11-29 1980-11-29 Manufacture of semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5792865A true JPS5792865A (en) 1982-06-09
JPS6225273B2 JPS6225273B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=15871354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55168616A Granted JPS5792865A (en) 1980-11-20 1980-11-29 Manufacture of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5792865A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62227870A (ja) * 1986-03-31 1987-10-06 Mazda Motor Corp 車両の４輪操舵装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101192A (en) * 1979-01-24 1980-08-01 Xicor Inc Method and unit for nonnvolatile memory
JPS55163932A (en) * 1979-06-08 1980-12-20 Toshiba Corp Data switching system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101192A (en) * 1979-01-24 1980-08-01 Xicor Inc Method and unit for nonnvolatile memory
JPS55163932A (en) * 1979-06-08 1980-12-20 Toshiba Corp Data switching system

Also Published As

Publication number Publication date
JPS6225273B2 (enrdf_load_stackoverflow) 1987-06-02

Similar Documents

Publication Publication Date Title
JPS5457875A (en) Semiconductor nonvolatile memory device
HK40790A (en) Semiconductor device and method of producing such a device
DE69226176D1 (de) Elektrisch aenderbare einzel-transistor-halbleiterfestwertspeicheranordnung
JPS5649570A (en) Semiconductor memory and its manufacturing process
JPS5792865A (en) Manufacture of semiconductor memory device
JPS5562771A (en) Integrated circuit device
JPS54156484A (en) Non-volatile semiconductor memory device
JPS54156483A (en) Non-volatile semiconductor memory device
JPS5263684A (en) Non-volatile semiconductor memory device
JPS5543862A (en) Semiconductor nonvolatile memory
KR890001102A (ko) 펄스로 지울 수 있는 eprom 및 지우는 방법
JPS5521102A (en) Semiconductor memory cell
JPS5621363A (en) Semiconductor device
JPS5742169A (en) Production of semiconductor device
JPS6433961A (en) Mos composite memory device
JPS6420668A (en) Programable read only memory
JPS56126977A (en) Junction type field effect transistor
JPS5649574A (en) Semiconductor device
JPS57121271A (en) Field effect transistor
JPS52130580A (en) High densityintegrated circuit device
JPS56150858A (en) Semiconductor device and manufacture thereof
JPS5522279A (en) Nonvolatile semiconductor memory device
EP0069233A3 (en) Memory array and methods of making same
JPS55102274A (en) Insulated gate field effect transistor
JPS56142674A (en) Semiconductor memory device