JPS5791524A - Electron beam exposure method - Google Patents

Electron beam exposure method

Info

Publication number
JPS5791524A
JPS5791524A JP16751680A JP16751680A JPS5791524A JP S5791524 A JPS5791524 A JP S5791524A JP 16751680 A JP16751680 A JP 16751680A JP 16751680 A JP16751680 A JP 16751680A JP S5791524 A JPS5791524 A JP S5791524A
Authority
JP
Japan
Prior art keywords
electron beam
resist film
time
negative
lapse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16751680A
Other languages
Japanese (ja)
Inventor
Koichi Kobayashi
Toshihiko Osada
Takaharu Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16751680A priority Critical patent/JPS5791524A/en
Publication of JPS5791524A publication Critical patent/JPS5791524A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To improve the accuracy of an infinitesimal pattern by increasing the dosage responsive to the lapse of time of exposure when a negative electron resist film formed on the surface of a substrate to be treated is exposed with an electron beam, thereby correcting thereafter the later polymerization effect. CONSTITUTION:A negative electron resist film 2 is formed on a substrate 1 of Si or the like, and the dosage is increased in response to the lapse of time from when the exposure is started in case of exposing an electron beam. In this manner, a crosslinking reaction is proceeded as the time goes, the later polymerization effect of the negative resist increasing the apparent sensitivity is corrected, thereby obtaining the uniform pattern width and resist film thickness over the entire sample.
JP16751680A 1980-11-28 1980-11-28 Electron beam exposure method Pending JPS5791524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16751680A JPS5791524A (en) 1980-11-28 1980-11-28 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16751680A JPS5791524A (en) 1980-11-28 1980-11-28 Electron beam exposure method

Publications (1)

Publication Number Publication Date
JPS5791524A true JPS5791524A (en) 1982-06-07

Family

ID=15851129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16751680A Pending JPS5791524A (en) 1980-11-28 1980-11-28 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JPS5791524A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114720A (en) * 1984-06-29 1986-01-22 Fujitsu Ltd Electron beam exposure method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114720A (en) * 1984-06-29 1986-01-22 Fujitsu Ltd Electron beam exposure method
JPH0220133B2 (en) * 1984-06-29 1990-05-08 Fujitsu Ltd

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