JPS5783029A - Exposure of electron beam - Google Patents
Exposure of electron beamInfo
- Publication number
- JPS5783029A JPS5783029A JP55158397A JP15839780A JPS5783029A JP S5783029 A JPS5783029 A JP S5783029A JP 55158397 A JP55158397 A JP 55158397A JP 15839780 A JP15839780 A JP 15839780A JP S5783029 A JPS5783029 A JP S5783029A
- Authority
- JP
- Japan
- Prior art keywords
- irradiation
- patterns
- electron beam
- scattering
- doughnut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55158397A JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55158397A JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5783029A true JPS5783029A (en) | 1982-05-24 |
| JPS6262046B2 JPS6262046B2 (enExample) | 1987-12-24 |
Family
ID=15670841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55158397A Granted JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783029A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210616A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 電子ビ−ム描画方法 |
| JPS58210617A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 電子ビ−ム描画方法 |
| JPH02220426A (ja) * | 1989-02-21 | 1990-09-03 | Matsushita Electric Ind Co Ltd | 電子ビーム露光方法 |
-
1980
- 1980-11-11 JP JP55158397A patent/JPS5783029A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210616A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 電子ビ−ム描画方法 |
| JPS58210617A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 電子ビ−ム描画方法 |
| JPH02220426A (ja) * | 1989-02-21 | 1990-09-03 | Matsushita Electric Ind Co Ltd | 電子ビーム露光方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6262046B2 (enExample) | 1987-12-24 |
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