JPS6262046B2 - - Google Patents
Info
- Publication number
- JPS6262046B2 JPS6262046B2 JP55158397A JP15839780A JPS6262046B2 JP S6262046 B2 JPS6262046 B2 JP S6262046B2 JP 55158397 A JP55158397 A JP 55158397A JP 15839780 A JP15839780 A JP 15839780A JP S6262046 B2 JPS6262046 B2 JP S6262046B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- irradiation amount
- intensity distribution
- scattering intensity
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55158397A JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55158397A JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5783029A JPS5783029A (en) | 1982-05-24 |
| JPS6262046B2 true JPS6262046B2 (enExample) | 1987-12-24 |
Family
ID=15670841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55158397A Granted JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783029A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210616A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 電子ビ−ム描画方法 |
| JPS58210617A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 電子ビ−ム描画方法 |
| JP2512131B2 (ja) * | 1989-02-21 | 1996-07-03 | 松下電器産業株式会社 | 電子ビ―ム露光方法 |
-
1980
- 1980-11-11 JP JP55158397A patent/JPS5783029A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5783029A (en) | 1982-05-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3971937B2 (ja) | 露光条件監視方法およびその装置並びに半導体デバイスの製造方法 | |
| US6500591B1 (en) | Method of averaging focus through scattered energy determination | |
| KR100629292B1 (ko) | 프로세스 근접 효과의 예측 모델의 작성 방법, 공정의관리 방법, 반도체 장치의 제조 방법 및 포토마스크의제조 방법 | |
| JP3825744B2 (ja) | フォトマスクの製造方法及び半導体装置の製造方法 | |
| EP0422395A2 (en) | Apparatus for and method of characterizing photolithography systems | |
| KR100572940B1 (ko) | 모니터 방법, 노광 방법, 반도체 디바이스의 제조 방법,에칭 방법 및 노광 처리 장치 | |
| CN101692154A (zh) | 偏转装置 | |
| US10522328B2 (en) | Method of performing dose modulation, in particular for electron beam lithography | |
| KR100319672B1 (ko) | 전자빔을사용하는패턴노광방법 | |
| KR100395292B1 (ko) | 노광방법및레지스트패턴산출방법 | |
| US6472766B2 (en) | Step mask | |
| KR100459697B1 (ko) | 가변적인 후방 산란 계수를 이용하는 전자빔 노광 방법 및이를 기록한 컴퓨터로 읽을 수 있는 기록 매체 | |
| JPS5834918A (ja) | 電子ビ−ム露光方法 | |
| US4644170A (en) | Method of electron beam exposure | |
| US4774158A (en) | Method of determining an exposure dose of a photosensitive lacquer layer | |
| JPS6262046B2 (enExample) | ||
| US5780852A (en) | Dimension measurement of a semiconductor device | |
| JP2003303768A (ja) | パターン形成方法および描画方法 | |
| JP4082970B2 (ja) | 荷電粒子ビーム露光方法 | |
| JP2008311311A (ja) | 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置 | |
| JP2781941B2 (ja) | 電子ビーム描画方法 | |
| JPH11260694A (ja) | 近接効果パラメータの測定方法 | |
| KR100620157B1 (ko) | 반도체 리소그래피 장치에서의 전자원 상태 예측 방법 | |
| Atwood et al. | Improved accuracy for SEM linewidth measurements | |
| JPS5810825A (ja) | 電子ビ−ム散乱強度分布測定方法 |