JPS5750433A - Electron beam exposure method - Google Patents

Electron beam exposure method

Info

Publication number
JPS5750433A
JPS5750433A JP12690380A JP12690380A JPS5750433A JP S5750433 A JPS5750433 A JP S5750433A JP 12690380 A JP12690380 A JP 12690380A JP 12690380 A JP12690380 A JP 12690380A JP S5750433 A JPS5750433 A JP S5750433A
Authority
JP
Japan
Prior art keywords
pattern
exposure
electron beams
amount
strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12690380A
Other languages
Japanese (ja)
Other versions
JPS6234136B2 (en
Inventor
Yasuhide Machida
Noriaki Nakayama
Norishige Hisatsugu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12690380A priority Critical patent/JPS5750433A/en
Publication of JPS5750433A publication Critical patent/JPS5750433A/en
Publication of JPS6234136B2 publication Critical patent/JPS6234136B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To determine the amount of electron beams irradiated in a comparatively short time, and to obtain an exposure pattern having practically sufficient high accuracy through approximate correction by remodelling a position where a sample point is set. CONSTITUTION:At least the two sample points k1, k2 are set on one unit pattern 21, and the strength of electron beams scattered from the patterns 22, 23 of the surrounding is obtained by making only the sample point at the remoter side from one pattern cirrespond to the pattern (that is, k2 to the pattern 22 and k1 to the pattern 23). Accordingly, a solution of simultaneous equations determined so that the sum total of the strength of electron beams scattered given by the exposure of all rectangular patterns is equal to the optimum amount of exposure, and each unit pattern is drawn by the amount of exposure of electron beams obtained by the equations.
JP12690380A 1980-09-12 1980-09-12 Electron beam exposure method Granted JPS5750433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12690380A JPS5750433A (en) 1980-09-12 1980-09-12 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12690380A JPS5750433A (en) 1980-09-12 1980-09-12 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPS5750433A true JPS5750433A (en) 1982-03-24
JPS6234136B2 JPS6234136B2 (en) 1987-07-24

Family

ID=14946733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12690380A Granted JPS5750433A (en) 1980-09-12 1980-09-12 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JPS5750433A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108378A (en) * 1982-12-14 1984-06-22 Omron Tateisi Electronics Co Driving process of piezoelectric bimorph
JPS59172233A (en) * 1983-03-19 1984-09-28 Fujitsu Ltd Electron beam exposure
JPS609121A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Evaluation of exposure pattern data
JPS60117623A (en) * 1983-11-30 1985-06-25 Fujitsu Ltd Inspecting method for exposure pattern
JPS60117622A (en) * 1983-11-30 1985-06-25 Fujitsu Ltd Inspecting method for exposure pattern
JPS60262420A (en) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> Electron beam drawing method and device therefor
JPS6221215A (en) * 1985-07-19 1987-01-29 Fujitsu Ltd Electron beam exposing method
JPS6384968U (en) * 1986-11-25 1988-06-03
JPS64783A (en) * 1987-10-24 1989-01-05 Kogyosha Tsushin Kiki Seisakusho:Kk Piezoelectric actuator
US5086398A (en) * 1989-11-27 1992-02-04 Mitsubishi Denki Kabushiki Kaisha Electron beam exposure method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536042U (en) * 1991-10-18 1993-05-18 株式会社小松製作所 Fuel injector
JPH0566235U (en) * 1992-02-13 1993-09-03 株式会社小松製作所 Engine output mode switching device coupling mechanism

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108378A (en) * 1982-12-14 1984-06-22 Omron Tateisi Electronics Co Driving process of piezoelectric bimorph
JPS59172233A (en) * 1983-03-19 1984-09-28 Fujitsu Ltd Electron beam exposure
JPH0352209B2 (en) * 1983-03-19 1991-08-09 Fujitsu Ltd
JPS609121A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Evaluation of exposure pattern data
JPS60117623A (en) * 1983-11-30 1985-06-25 Fujitsu Ltd Inspecting method for exposure pattern
JPS60117622A (en) * 1983-11-30 1985-06-25 Fujitsu Ltd Inspecting method for exposure pattern
JPS60262420A (en) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> Electron beam drawing method and device therefor
JPS6221215A (en) * 1985-07-19 1987-01-29 Fujitsu Ltd Electron beam exposing method
JPS6384968U (en) * 1986-11-25 1988-06-03
JPH051091Y2 (en) * 1986-11-25 1993-01-12
JPS64783A (en) * 1987-10-24 1989-01-05 Kogyosha Tsushin Kiki Seisakusho:Kk Piezoelectric actuator
US5086398A (en) * 1989-11-27 1992-02-04 Mitsubishi Denki Kabushiki Kaisha Electron beam exposure method

Also Published As

Publication number Publication date
JPS6234136B2 (en) 1987-07-24

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